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III-V-on-Silicon Photonic Integrated Circuits for Spectroscopic Sensing in the 2-4 μm Wavelength Range

Sensors (Basel, Switzerland), 2017-08, Vol.17 (8), p.1788

2017

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2.3 µm range InP-based type-II quantum well Fabry-Perot lasers heterogeneously integrated on a silicon photonic integrated circuit

Optics express, 2016-09, Vol.24 (18), p.21081-21089

2016

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GaSb-based vertical-cavity surface-emitting lasers with an emission wavelength at 3 μm

Optics letters, 2016-06, Vol.41 (12), p.2799-2802

2016

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Novel InP- and GaSb-based light sources for the near to far infrared

Semiconductor science and technology, 2016-10, Vol.31 (11), p.113005

2016

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2 μm wavelength range InP-based type-II quantum well photodiodes heterogeneously integrated on silicon photonic integrated circuits

Optics express, 2015-10, Vol.23 (20), p.26834-26841

2015

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Widely tunable 23 μm III-V-on-silicon Vernier lasers for broadband spectroscopic sensing

Photonics research (Washington, DC), 2018-09, Vol.6 (9), p.858

2018

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Broad wavelength coverage 23 μm III-V-on-silicon DFB laser array

Optica, 2017-08, Vol.4 (8), p.972

2017

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Heterogeneously integrated III–V-on-silicon 2.3x μm distributed feedback lasers based on a type-II active region

Applied physics letters, 2016-11, Vol.109 (22)

2016

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Widely Tunable III-V/Silicon Lasers for Spectroscopy in the Short-Wave Infrared

IEEE journal of selected topics in quantum electronics, 2019-11, Vol.25 (6), p.1-12

2019

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Wavelength Dependence of Efficiency Limiting Mechanisms in Type-I Mid-Infrared GaInAsSb/GaSb Lasers

IEEE journal of selected topics in quantum electronics, 2017-11, Vol.23 (6), p.1-9

2017

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Type-II InP-based lasers emitting at 2.55 μ m

Applied physics letters, 2012-01, Vol.100 (4), p.041109-041109-3

2012

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InP-Based Vertical-Cavity Surface-Emitting Lasers With Type-II Quantum Wells

IEEE journal of selected topics in quantum electronics, 2015-11, Vol.21 (6), p.453-461

2015

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InP-Based Type-II Quantum-Well Lasers and LEDs

IEEE journal of selected topics in quantum electronics, 2013-07, Vol.19 (4), p.1900909-1900909

2013

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Up to 3 μ m light emission on InP substrate using GaInAs/GaAsSb type-II quantum wells

Applied physics letters, 2011-11, Vol.99 (22), p.221109-221109-3

2011

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III-V-on-silicon 2-µm-wavelength-range wavelength demultiplexers with heterogeneously integrated InP-based type-II photodetectors

Optics express, 2016-04, Vol.24 (8), p.8480-8490

2016

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InP-based 2.8–3.5 μ m resonant-cavity light emitting diodes based on type-II transitions in GaInAs/GaAsSb heterostructures

Applied physics letters, 2012-11, Vol.101 (22)

2012

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GaInAs/GaAsSb-based type-II micro-cavity LED with 2–3μm light emission grown on InP substrate

Journal of crystal growth, 2013-05, Vol.370, p.240-243

2013

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InP-based 2.8--3.5??m resonant-cavity light emitting diodes based on type-II transitions in GaInAs/GaAsSb heterostructures

Applied physics letters, 2012-01, Vol.101 (22)

2012

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Wavelength dependence of efficiency limiting mechanisms in type I GaInAsSb/GaSb lasers emitting in the mid-infrared

2016 International Semiconductor Laser Conference (ISLC), 2016, p.1-2

2016

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InP-Based Type-II Heterostructure Lasers for 2.5µm Working CW at Room Temperature and Above

2014 International Semiconductor Laser Conference, 2014, p.44-45

2014

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InP-Based Type-II Heterostructure Lasers for Wavelength above 2 µm

2014 IEEE Photonics Society Summer Topical Meeting Series, 2014, p.79-80

2014

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Light emission between 2 and 4 µm: Innovative active region designs for InP- and GaSb-based devices

2013 International Conference on Indium Phosphide and Related Materials (IPRM), 2013, p.1-2

2013

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Extending lasing wavelength on InP with GaAsSb / GaInAs type-II active regions

ISLC 2012 International Semiconductor Laser Conference, 2012, p.22-23

2012

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Widely tunable III-V-on-silicon Vernier lasers operating in the 2.3 μm wavelength range

2018 Conference on Lasers and Electro-Optics (CLEO), 2018, p.1-2

2018

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III-V/Si Photonic Integrated Circuits for the Mid-Infrared

2018 IEEE 15th International Conference on Group IV Photonics (GFP), 2018, p.1-1

2018

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III-V-on-Silicon Photonic Integrated Circuits for Spectroscopic Sensing in the 2-4 μm Wavelength Range

2.3 µm range InP-based type-II quantum well Fabry-Perot lasers heterogeneously integrated on a silicon photonic integrated circuit

GaSb-based vertical-cavity surface-emitting lasers with an emission wavelength at 3 μm

Novel InP- and GaSb-based light sources for the near to far infrared

2 μm wavelength range InP-based type-II quantum well photodiodes heterogeneously integrated on silicon photonic integrated circuits

Widely tunable 23 μm III-V-on-silicon Vernier lasers for broadband spectroscopic sensing

Broad wavelength coverage 23 μm III-V-on-silicon DFB laser array

Heterogeneously integrated III–V-on-silicon 2.3x μm distributed feedback lasers based on a type-II active region

Widely Tunable III-V/Silicon Lasers for Spectroscopy in the Short-Wave Infrared

Wavelength Dependence of Efficiency Limiting Mechanisms in Type-I Mid-Infrared GaInAsSb/GaSb Lasers

Type-II InP-based lasers emitting at 2.55 μ m

InP-Based Vertical-Cavity Surface-Emitting Lasers With Type-II Quantum Wells

InP-Based Type-II Quantum-Well Lasers and LEDs

Up to 3 μ m light emission on InP substrate using GaInAs/GaAsSb type-II quantum wells

III-V-on-silicon 2-µm-wavelength-range wavelength demultiplexers with heterogeneously integrated InP-based type-II photodetectors

InP-based 2.8–3.5 μ m resonant-cavity light emitting diodes based on type-II transitions in GaInAs/GaAsSb heterostructures

GaInAs/GaAsSb-based type-II micro-cavity LED with 2–3μm light emission grown on InP substrate

InP-based 2.8--3.5??m resonant-cavity light emitting diodes based on type-II transitions in GaInAs/GaAsSb heterostructures

Wavelength dependence of efficiency limiting mechanisms in type I GaInAsSb/GaSb lasers emitting in the mid-infrared

InP-Based Type-II Heterostructure Lasers for 2.5µm Working CW at Room Temperature and Above

InP-Based Type-II Heterostructure Lasers for Wavelength above 2 µm

Light emission between 2 and 4 µm: Innovative active region designs for InP- and GaSb-based devices

Extending lasing wavelength on InP with GaAsSb / GaInAs type-II active regions

Widely tunable III-V-on-silicon Vernier lasers operating in the 2.3 μm wavelength range

III-V/Si Photonic Integrated Circuits for the Mid-Infrared

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