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Direct measurement of Auger electrons emitted from a semiconductor light-emitting diode under electrical injection: identification of the dominant mechanism for efficiency droop

Physical review letters, 2013-04, Vol.110 (17), p.177406-177406, Article 177406

2013

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Structural and electronic properties of Ga2O3-Al2O3 alloys

Applied physics letters, 2018-06, Vol.112 (24)

2018

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High luminous flux from single crystal phosphor-converted laser-based white lighting system

Optics express, 2016-01, Vol.24 (2), p.A215-A221

2016

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Localization landscape theory of disorder in semiconductors. II. Urbach tails of disordered quantum well layers

Physical review. B, 2017-04, Vol.95 (14), p.144205, Article 144205

2017

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The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behavior

Journal of applied physics, 2014-09, Vol.116 (11)

2014

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Prospects for 100% wall-plug efficient III-nitride LEDs

Optics express, 2018-06, Vol.26 (13), p.16600-16608

2018

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Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays

Acta materialia, 2013-02, Vol.61 (3), p.945-951

2013

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The efficiency challenge of nitride light-emitting diodes for lighting

Physica status solidi. A, Applications and materials science, 2015-05, Vol.212 (5), p.899-913

2015

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4 Gbps direct modulation of 450 nm GaN laser for high-speed visible light communication

Optics express, 2015-06, Vol.23 (12), p.16232-16237

2015

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Development of high performance green c-plane III-nitride light-emitting diodes

Optics express, 2018-03, Vol.26 (5), p.5591-5601

2018

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Growth and etching characteristics of (001) β-Ga2O3 by plasma-assisted molecular beam epitaxy

Semiconductor science and technology, 2018-01, Vol.33 (1)

2018

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Gigabit-per-second white light-based visible light communication using near-ultraviolet laser diode and red-, green-, and blue-emitting phosphors

Optics express, 2017-07, Vol.25 (15), p.17480-17487

2017

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Epitaxial Sb-doped SnO2 and Sn-doped In2O3 transparent conducting oxide contacts on GaN-based light emitting diodes

Thin solid films, 2016-04, Vol.605, p.186-192

2016

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Gallium vacancy complexes as a cause of Shockley-Read-Hall recombination in III-nitride light emitters

Applied physics letters, 2016-04, Vol.108 (14)

2016

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Analyzing the physical properties of InGaN multiple quantum well light emitting diodes from nano scale structure

Applied physics letters, 2012-08, Vol.101 (8), p.83505

2012

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Demonstration of Electrically Injected Semipolar Laser Diodes Grown on Low-Cost and Scalable Sapphire Substrates

ACS applied materials & interfaces, 2019-12, Vol.11 (50), p.47106-47111

2019

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High-electron-mobility GaN grown on free-standing GaN templates by ammonia-based molecular beam epitaxy

Journal of applied physics, 2014-05, Vol.115 (19)

2014

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Reduced dislocation density and residual tension in AlN grown on SiC by metalorganic chemical vapor deposition

Applied physics letters, 2019-10, Vol.115 (16)

2019

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Infrared absorption of hydrogen-related defects in ammonothermal GaN

Applied physics letters, 2016-05, Vol.108 (20)

2016

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Plasma-assisted molecular beam epitaxy of Sn-doped In2O3: Sn incorporation, structural changes, doping limits, and compensation

Physica status solidi. A, Applications and materials science, 2014-01, Vol.211 (1), p.48-53

2014

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Electron transport in unipolar InGaN/GaN multiple quantum well structures grown by NH3 molecular beam epitaxy

Journal of applied physics, 2015-05, Vol.117 (18)

2015

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N-polar GaN epitaxy and high electron mobility transistors

Semiconductor science and technology, 2013-07, Vol.28 (7), p.74009

2013

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Localization landscape theory of disorder in semiconductors. III. Application to carrier transport and recombination in light emitting diodes

Physical review. B, 2017-04, Vol.95 (14), p.144206, Article 144206

2017

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Curvature and bow of bulk GaN substrates

Journal of applied physics, 2016-07, Vol.120 (3)

2016

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Fabrication technology for high light-extraction ultraviolet thin-film flip-chip (UV TFFC) LEDs grown on SiC

Semiconductor science and technology, 2019-01, Vol.34 (3), p.35007

2019

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Direct measurement of Auger electrons emitted from a semiconductor light-emitting diode under electrical injection: identification of the dominant mechanism for efficiency droop

Structural and electronic properties of Ga2O3-Al2O3 alloys

High luminous flux from single crystal phosphor-converted laser-based white lighting system

Localization landscape theory of disorder in semiconductors. II. Urbach tails of disordered quantum well layers

The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behavior

Prospects for 100% wall-plug efficient III-nitride LEDs

Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays

The efficiency challenge of nitride light-emitting diodes for lighting

4 Gbps direct modulation of 450 nm GaN laser for high-speed visible light communication

Development of high performance green c-plane III-nitride light-emitting diodes

Growth and etching characteristics of (001) β-Ga2O3 by plasma-assisted molecular beam epitaxy

Gigabit-per-second white light-based visible light communication using near-ultraviolet laser diode and red-, green-, and blue-emitting phosphors

Epitaxial Sb-doped SnO2 and Sn-doped In2O3 transparent conducting oxide contacts on GaN-based light emitting diodes

Gallium vacancy complexes as a cause of Shockley-Read-Hall recombination in III-nitride light emitters

Analyzing the physical properties of InGaN multiple quantum well light emitting diodes from nano scale structure

Demonstration of Electrically Injected Semipolar Laser Diodes Grown on Low-Cost and Scalable Sapphire Substrates

High-electron-mobility GaN grown on free-standing GaN templates by ammonia-based molecular beam epitaxy

Reduced dislocation density and residual tension in AlN grown on SiC by metalorganic chemical vapor deposition

Infrared absorption of hydrogen-related defects in ammonothermal GaN

Plasma-assisted molecular beam epitaxy of Sn-doped In2O3: Sn incorporation, structural changes, doping limits, and compensation

Electron transport in unipolar InGaN/GaN multiple quantum well structures grown by NH3 molecular beam epitaxy

N-polar GaN epitaxy and high electron mobility transistors

Localization landscape theory of disorder in semiconductors. III. Application to carrier transport and recombination in light emitting diodes

Curvature and bow of bulk GaN substrates

Fabrication technology for high light-extraction ultraviolet thin-film flip-chip (UV TFFC) LEDs grown on SiC

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