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Controlled thinning and surface smoothening of silicon nanopillars

Nanotechnology, 2009-11, Vol.20 (44), p.445303-445303

2009

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Black silicon with high density and high aspect ratio nanowhiskers

Nanotechnology, 2011-06, Vol.22 (23), p.235307-235307

2011

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Vertical single nanowire devices based on conducting polymers

Nanotechnology, 2012-01, Vol.23 (2), p.025302-1-5

2012

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Adjustment of self-heating in long superconducting thin film NbN microbridges

Superconductor science & technology, 2012-03, Vol.25 (3), p.35012-1-8

2012

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Ni tracer diffusion in the B2-compound NiAl: influence of temperature and composition

Acta materialia, 2001-05, Vol.49 (8), p.1399-1411

2001

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Donor-acceptor pair emission enhancement in mass-transport-grown GaN

Journal of applied physics, 2005-08, Vol.98 (3), p.033508-033508-8

2005

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Planar double-gate SOI MOS devices: Fabrication by wafer bonding over pre-patterned cavities and electrical characterization

Solid-state electronics, 2007-02, Vol.51 (2), p.231-238

2007

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Growth and separation related properties of HVPE-GaN free-standing films

Journal of Crystal Growth, 2002-12, Vol.246 (3), p.207-214

2002

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Solute diffusion of Al-substituting elements in Ni3Al and the diffusion mechanism of the minority component

Acta materialia, 1998-07, Vol.46 (12), p.4369-4380

1998

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Ni radiotracer diffusion in B2 ordered NiFeAl alloys

Intermetallics, 2006-03, Vol.14 (3), p.308-314

2006

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Self-Diffusion of Ni in Single and Polycrystals of Ni3Al. A Study of SIMS and Radiotracer Analysis

Physica status solidi. B. Basic research, 1995-09, Vol.191 (1), p.45-55

1995

Volltextzugriff (PDF)

Molecular junctions made of tungsten-polyoxometalate self-assembled monolayers: Towards polyoxometalate-based molecular electronics devices

Microelectronic engineering, 2011-08, Vol.88 (8), p.2775-2777

2011

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Pre-transition oxidation behaviour of pre-hydrided Zircaloy-2

Journal of nuclear materials, 2001-03, Vol.289 (3), p.315-328

2001

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Structural and magnetic properties of GaMnAs layers with high Mn-content grown by migration-enhanced epitaxy on GaAs(100) substrates

Applied physics letters, 2001-05, Vol.78 (21), p.3271-3273

2001

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High-Throughput On-Chip Large Deformation of Silicon Nanoribbons and Nanowires

Journal of microelectromechanical systems, 2012-08, Vol.21 (4), p.822-829

2012

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Diffusion of Nitrogen from a Buried Doping Layer in Gallium Arsenide Revealing the Prominent Role of As Interstitials

Physical review letters, 1998-10, Vol.81 (16), p.3443-3446

1998

Volltextzugriff (PDF)

Microscopic Si whiskers

Microelectronic engineering, 2011-08, Vol.88 (8), p.2593-2596

2011

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Note: Fast and reliable fracture strain extraction technique applied to silicon at nanometer scale

Review of scientific instruments, 2011-11, Vol.82 (11), p.116106-116106-3

2011

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Diffusion of tin in germanium studied by secondary ion mass spectrometry

Journal of applied physics, 1995-11, Vol.78 (9), p.5351-5355

1995

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Dominating behaviour of the donor-acceptor pair emission in mass-transport GaN

AIP conference proceedings, 2005, Vol.772, p.261-262

2005

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Diffusion of nitrogen in gallium arsenide

Physica. B, Condensed matter, 2003-12, Vol.340-342, p.367-370

2003

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Characterisation of sub micron salt-doped polymer electrolyte films

Electrochimica acta, 2000-01, Vol.45 (8), p.1453-1461

2000

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Diffusion of Cd in GaAs and its correlation with self-diffusion on the Ga sublattice

Journal of applied physics, 1999-07, Vol.86 (2), p.791-799

1999

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Formation of epitaxial CoSi2 films on Si and on Si/Si80Ge20 (100) by reactive deposition epitaxy

Applied physics letters, 2002-07, Vol.81 (1), p.37-39

2002

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Oxygen diffusion in ultrafine grained monoclinic ZrO2

Journal of applied physics, 1999-06, Vol.85 (11), p.7646-7654

1999

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Controlled thinning and surface smoothening of silicon nanopillars

Black silicon with high density and high aspect ratio nanowhiskers

Vertical single nanowire devices based on conducting polymers

Adjustment of self-heating in long superconducting thin film NbN microbridges

Ni tracer diffusion in the B2-compound NiAl: influence of temperature and composition

Donor-acceptor pair emission enhancement in mass-transport-grown GaN

Planar double-gate SOI MOS devices: Fabrication by wafer bonding over pre-patterned cavities and electrical characterization

Growth and separation related properties of HVPE-GaN free-standing films

Solute diffusion of Al-substituting elements in Ni3Al and the diffusion mechanism of the minority component

Ni radiotracer diffusion in B2 ordered NiFeAl alloys

Self-Diffusion of Ni in Single and Polycrystals of Ni3Al. A Study of SIMS and Radiotracer Analysis

Molecular junctions made of tungsten-polyoxometalate self-assembled monolayers: Towards polyoxometalate-based molecular electronics devices

Pre-transition oxidation behaviour of pre-hydrided Zircaloy-2

Structural and magnetic properties of GaMnAs layers with high Mn-content grown by migration-enhanced epitaxy on GaAs(100) substrates

High-Throughput On-Chip Large Deformation of Silicon Nanoribbons and Nanowires

Diffusion of Nitrogen from a Buried Doping Layer in Gallium Arsenide Revealing the Prominent Role of As Interstitials

Microscopic Si whiskers

Note: Fast and reliable fracture strain extraction technique applied to silicon at nanometer scale

Diffusion of tin in germanium studied by secondary ion mass spectrometry

Dominating behaviour of the donor-acceptor pair emission in mass-transport GaN

Diffusion of nitrogen in gallium arsenide

Characterisation of sub micron salt-doped polymer electrolyte films

Diffusion of Cd in GaAs and its correlation with self-diffusion on the Ga sublattice

Formation of epitaxial CoSi2 films on Si and on Si/Si80Ge20 (100) by reactive deposition epitaxy

Oxygen diffusion in ultrafine grained monoclinic ZrO2

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