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The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs

IEEE electron device letters, 2000-06, Vol.21 (6), p.268-270

2000

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An AlGaN/GaN high-electron-mobility transistor with an AlN sub-buffer layer

Journal of physics. Condensed matter, 2002-04, Vol.14 (13), p.3499-3509

2002

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Microwave performance of AlGaN/GaN metal insulator semiconductor field effect transistors on sapphire substrates

IEEE transactions on electron devices, 2001-03, Vol.48 (3), p.416-419

2001

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AlGaN/GaN high electron mobility transistors on Si(111) substrates

IEEE transactions on electron devices, 2001-03, Vol.48 (3), p.420-426

2001

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High-power broad-band AlGaN/GaN HEMT MMICs on SiC substrates

IEEE transactions on microwave theory and techniques, 2001-12, Vol.49 (12), p.2486-2493

2001

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Control of epitaxial defects for optimal AlGaN/GaN HEMT performance and reliability

Journal of crystal growth, 2004-12, Vol.272 (1), p.285-292

2004

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Microwave power limits of AlGaN/GaN HEMTs under pulsed-bias conditions

IEEE transactions on microwave theory and techniques, 2003-02, Vol.51 (2), p.618-623

2003

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Role of Spontaneous and Piezoelectric Polarization Induced Effects in Group-III Nitride Based Heterostructures and Devices

physica status solidi (b), 1999-11, Vol.216 (1), p.381-389

1999

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Anaphylaxis to cisatracurium following negative skin testing

Anaesthesia and intensive care, 2005-12, Vol.33 (6), p.816-819

2005

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High electron mobility AlGaN/GaN heterostructure on (111) Si

Applied physics letters, 2000-02, Vol.76 (6), p.736-738

2000

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Does mitochondrial dysfunction of hair follicle epithelial stem cells play a role in the pathobiology of lichen planopilaris?

British journal of dermatology (1951), 2020-11, Vol.183 (5), p.964-966

2020

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Low-frequency noise and mobility fluctuations in AlGaN/GaN heterostructure field-effect transistors

Applied physics letters, 2000-06, Vol.76 (23), p.3442-3444

2000

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Low-phase noise AlGaN/GaN FET-based voltage controlled oscillators (VCOs)

IEEE microwave and wireless components letters, 2001-06, Vol.11 (6), p.244-245

2001

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Abortions in sheep caused by Salmonella Brandenburg: Pathological findings

New Zealand veterinary journal, 2007-12, Vol.55 (6), p.356-357

2007

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Single step process for epitaxial lateral overgrowth of GaN on SiC and sapphire substrates

Applied physics letters, 1999-12, Vol.75 (24), p.3820-3822

1999

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Breath interval as a measure of dynamic opioid effect

British journal of anaesthesia : BJA, 2000-06, Vol.84 (6), p.735-738

2000

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Breath interval as a continuous measure of opioid effects of intravenous fentanyl and alfentanil

European journal of anaesthesiology, 2003-06, Vol.20 (6), p.498-500

2003

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High-power broadband AlGaN/GaN HEMT MMICs on SiC substrates

2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157), 2001, Vol.2, p.1059-1062 vol.2

2001

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Validation of an analytical large signal model for AlGaN/GaN HEMTs

2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017), 2000, Vol.2, p.761-764 vol.2

2000

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Cascode connected AlGaN/GaN HEMTs on SiC substrates

IEEE microwave and guided wave letters, 2000-08, Vol.10 (8), p.316-318

2000

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Degradation characteristics of AlGaN-GaN high electron mobility transistors

2001 IEEE International Reliability Physics Symposium Proceedings. 39th Annual (Cat. No.00CH37167), 2001, p.214-218

2001

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High-power AlGaN/GaN FET-based VCO sources

2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157), 2001, Vol.3, p.1427-1430 vol.3

2001

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Composition Analysis Using Elastic Recoil Detection

physica status solidi (b), 1999-11, Vol.216 (1), p.679-682

1999

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Flow Modulation Epitaxial Lateral Overgrowth Of Gallium Nitride On Masked 6H-Silicon Carbide And Sapphire Surfaces

MRS proceedings, 1998, Vol.512, Article 59

1998

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The Influence of Spontaneous and Piezoelectric Polarization on Novel AlGaN/GaN/InGaN Device Structures

MRS proceedings, 1999, Vol.572, Article 501

1999

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The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs

An AlGaN/GaN high-electron-mobility transistor with an AlN sub-buffer layer

Microwave performance of AlGaN/GaN metal insulator semiconductor field effect transistors on sapphire substrates

AlGaN/GaN high electron mobility transistors on Si(111) substrates

High-power broad-band AlGaN/GaN HEMT MMICs on SiC substrates

Control of epitaxial defects for optimal AlGaN/GaN HEMT performance and reliability

Microwave power limits of AlGaN/GaN HEMTs under pulsed-bias conditions

Role of Spontaneous and Piezoelectric Polarization Induced Effects in Group-III Nitride Based Heterostructures and Devices

Anaphylaxis to cisatracurium following negative skin testing

High electron mobility AlGaN/GaN heterostructure on (111) Si

Does mitochondrial dysfunction of hair follicle epithelial stem cells play a role in the pathobiology of lichen planopilaris?

Low-frequency noise and mobility fluctuations in AlGaN/GaN heterostructure field-effect transistors

Low-phase noise AlGaN/GaN FET-based voltage controlled oscillators (VCOs)

Abortions in sheep caused by Salmonella Brandenburg: Pathological findings

Single step process for epitaxial lateral overgrowth of GaN on SiC and sapphire substrates

Breath interval as a measure of dynamic opioid effect

Breath interval as a continuous measure of opioid effects of intravenous fentanyl and alfentanil

High-power broadband AlGaN/GaN HEMT MMICs on SiC substrates

Validation of an analytical large signal model for AlGaN/GaN HEMTs

Cascode connected AlGaN/GaN HEMTs on SiC substrates

Degradation characteristics of AlGaN-GaN high electron mobility transistors

High-power AlGaN/GaN FET-based VCO sources

Composition Analysis Using Elastic Recoil Detection

Flow Modulation Epitaxial Lateral Overgrowth Of Gallium Nitride On Masked 6H-Silicon Carbide And Sapphire Surfaces

The Influence of Spontaneous and Piezoelectric Polarization on Novel AlGaN/GaN/InGaN Device Structures

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