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On the distribution of oxide defect levels in Al2O3 and HfO2 high-k dielectrics deposited on InGaAs metal-oxide-semiconductor devices studied by capacitance-voltage hysteresis

Journal of applied physics, 2017-04, Vol.121 (14)

2017

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Characteristic trapping lifetime and capacitance-voltage measurements of GaAs metal-oxide-semiconductor structures

Applied physics letters, 2007-09, Vol.91 (13)

2007

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Second-order nonlinear optical properties of chiral materials

Materials science & engineering. R, Reports : a review journal, 2003-11, Vol.42 (5), p.115-155

2003

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Reaction mechanisms for atomic layer deposition of aluminum oxide on semiconductor substrates

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2012-01, Vol.30 (1), p.01A127-01A127-10

2012

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Electric-Field-Modulated Circular-Difference Effects in Second-Harmonic Generation from a Chiral Liquid Crystal

Angewandte Chemie International Edition, 2002-10, Vol.41 (20), p.3882-3884

2002

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Atomic imaging of nucleation of trimethylaluminum on clean and H2O functionalized Ge(100) surfaces

The Journal of chemical physics, 2011-08, Vol.135 (5), p.054705-054705

2011

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Adsorption of O2 on Ge(100): Atomic Geometry and Site-Specific Electronic Structure

Journal of physical chemistry. C, 2012-05, Vol.116 (18), p.9925-9929

2012

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(Invited) Status and Trends in Ge CMOS Technology

ECS transactions, 2013-06, Vol.54 (1), p.25-37

2013

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Interface and Border Traps in Ge-Based Gate Stacks

ECS transactions, 2011, Vol.35 (3), p.465-480

2011

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A Study of the Influence of Typical Wet Chemical Treatments on the Germanium Wafer Surface

Solid state phenomena, 2005-04, Vol.103-104, p.27-30

2005

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Etch Rate Study of Germanium, GaAs and InGaAs: A Challenge in Semiconductor Processing

Solid state phenomena, 2009, Vol.145-146, p.203-206

2009

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Synthesis and Properties of Chiral Chromophore-Functionalized Polybinaphthalenes for Nonlinear Optics: Influence of Chromophore Concentration

Macromolecules, 2003-12, Vol.36 (26), p.9736-9741

2003

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On the Apparent Non-Arrhenius Temperature Dependence of Charge Trapping in IIIV/High- MOS Stack

IEEE transactions on electron devices, 2018-09, Vol.65 (9), p.3689-3696

2018

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Synthesis and Properties of Chiral Donor-Embedded Polybinaphthalenes for Nonlinear Optical Applications

Chemistry of materials, 2003-07, Vol.15 (15), p.2870-2872

2003

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Heterogeneous Integration and Fabrication of III-V MOS Devices in a 200mm Processing Environment

ECS transactions, 2011-01, Vol.35 (3), p.299-309

2011

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Gate Bias and Length Dependences of Total Ionizing Dose Effects in InGaAs FinFETs on Bulk Si

IEEE transactions on nuclear science, 2019-07, Vol.66 (7), p.1599-1605

2019

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Optical activity effects in second harmonic generation from anisotropic chiral thin films

The Journal of chemical physics, 2000-11, Vol.113 (17), p.7578-7581

2000

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A New Quality Metric for III-V/High-k MOS Gate Stacks Based on the Frequency Dispersion of Accumulation Capacitance and the CET

IEEE electron device letters, 2017-03, Vol.38 (3), p.318-321

2017

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Low-Frequency Noise Characterization of GeOx Passivated Germanium MOSFETs

IEEE transactions on electron devices, 2015-07, Vol.62 (7), p.2078-2083

2015

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Capacitance-Frequency Estimates of Border-Trap Densities in Multifin MOS Capacitors

IEEE transactions on nuclear science, 2018-01, Vol.65 (1), p.175-183

2018

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Adsorption of O 2 on Ge(100): Atomic Geometry and Site-Specific Electronic Structure

Journal of physical chemistry. C, 2012-05, Vol.116 (18), p.9925-9929

2012

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Mechanisms for the Trimethylaluminum Reaction in Aluminum Oxide Atomic Layer Deposition on Sulfur Passivated Germanium

Journal of physical chemistry. C, 2011-09, Vol.115 (35), p.17523-17532

2011

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Interfaces of high- k dielectrics on GaAs: Their common features and the relationship with Fermi level pinning (Invited Paper)

Microelectronic engineering, 2009-07, Vol.86 (7), p.1529-1535

2009

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Atomic Layer Deposition of High-k Dielectric Layers on Ge and III-V MOS Channels

ECS transactions, 2008-10, Vol.16 (10), p.671-685

2008

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ALD Growth Behavior of High-K Nanolayers on Various Substrates Characterized by X-Ray Spectrometry in Gracing Incidence Geometry

Solid state phenomena, 2013, Vol.195, p.95-97

2013

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On the distribution of oxide defect levels in Al2O3 and HfO2 high-k dielectrics deposited on InGaAs metal-oxide-semiconductor devices studied by capacitance-voltage hysteresis

Characteristic trapping lifetime and capacitance-voltage measurements of GaAs metal-oxide-semiconductor structures

Second-order nonlinear optical properties of chiral materials

Reaction mechanisms for atomic layer deposition of aluminum oxide on semiconductor substrates

Electric-Field-Modulated Circular-Difference Effects in Second-Harmonic Generation from a Chiral Liquid Crystal

Atomic imaging of nucleation of trimethylaluminum on clean and H2O functionalized Ge(100) surfaces

Adsorption of O2 on Ge(100): Atomic Geometry and Site-Specific Electronic Structure

(Invited) Status and Trends in Ge CMOS Technology

Interface and Border Traps in Ge-Based Gate Stacks

A Study of the Influence of Typical Wet Chemical Treatments on the Germanium Wafer Surface

Etch Rate Study of Germanium, GaAs and InGaAs: A Challenge in Semiconductor Processing

Synthesis and Properties of Chiral Chromophore-Functionalized Polybinaphthalenes for Nonlinear Optics: Influence of Chromophore Concentration

On the Apparent Non-Arrhenius Temperature Dependence of Charge Trapping in IIIV/High- MOS Stack

Synthesis and Properties of Chiral Donor-Embedded Polybinaphthalenes for Nonlinear Optical Applications

Heterogeneous Integration and Fabrication of III-V MOS Devices in a 200mm Processing Environment

Gate Bias and Length Dependences of Total Ionizing Dose Effects in InGaAs FinFETs on Bulk Si

Optical activity effects in second harmonic generation from anisotropic chiral thin films

A New Quality Metric for III-V/High-k MOS Gate Stacks Based on the Frequency Dispersion of Accumulation Capacitance and the CET

Low-Frequency Noise Characterization of GeOx Passivated Germanium MOSFETs

Capacitance-Frequency Estimates of Border-Trap Densities in Multifin MOS Capacitors

Adsorption of O 2 on Ge(100): Atomic Geometry and Site-Specific Electronic Structure

Mechanisms for the Trimethylaluminum Reaction in Aluminum Oxide Atomic Layer Deposition on Sulfur Passivated Germanium

Interfaces of high- k dielectrics on GaAs: Their common features and the relationship with Fermi level pinning (Invited Paper)

Atomic Layer Deposition of High-k Dielectric Layers on Ge and III-V MOS Channels

ALD Growth Behavior of High-K Nanolayers on Various Substrates Characterized by X-Ray Spectrometry in Gracing Incidence Geometry

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