UB Paderborn / Katalog / Suche / in CDI

1 – 25 von 113

Sortiert nach

Overview of emerging nonvolatile memory technologies

Nanoscale research letters, 2014-09, Vol.9 (1), p.526-526, Article 526

2014

Volltextzugriff (PDF)

Role of environmental and annealing conditions on the passivation-free in-Ga–Zn–O TFT

Thin solid films, 2011-12, Vol.520 (5), p.1489-1494

2011

Volltextzugriff (PDF)

Physics of Semiconductor Devices

3rd ed., 2006

Volltextzugriff (PDF)

Effects of rapid thermal annealing on Si delta-doped GaInP grown by low pressure metalorganic chemical vapor deposition

Japanese Journal of Applied Physics, 1995-12, Vol.34 (12A), p.6321-6325

1995

Volltextzugriff (PDF)

Silicon delta doping of GaInP grown by low-pressure metalorganic chemical vapor deposition

Japanese Journal of Applied Physics, 1995-09, Vol.34 (9A), p.L1107-L1109

1995

Volltextzugriff (PDF)

ION-IMPLANTATION TREATMENT (Ba, Sr)TiO3 THIN FILMS

Jpn.J.Appl.Phys ,Part 1. Vol. 39, no. 12A, pp. 6614-6618. 2000, 2000-12, Vol.39 (12A), p.6614-6618

2000

Volltextzugriff (PDF)

Thermal Stability of Co-Sputtered Ru–Ti Alloy Electrodes for Dynamic Random Access Memory Applications

Japanese Journal of Applied Physics, 1998-10, Vol.37 (10B), p.L1247

1998

Volltextzugriff (PDF)

Effects of O sub(2) plasma treatment on the electric and dielectric characteristics of Ba sub(0.7)Sr sub(0.3)TiO sub(3) thin films

Microelectronics and reliability, 2000-01, Vol.40 (4), p.679-682

2000

Volltextzugriff (PDF)

Ion-Implantation Treatment (Ba, Sr)TiO 3 Thin Films

Japanese Journal of Applied Physics, 2000-12, Vol.39 (12R), p.6614

2000

Volltextzugriff (PDF)

Effects of O2 plasma treatment on the electric and dielectric characteristics of Ba0.7Sr0.3TiO3 thin films

Microelectronics and reliability, 2000-04, Vol.40 (4-5), p.679-682

2000

Volltextzugriff (PDF)

Growth and electrical characterization of Si delta-doped GaInP by low pressure metalorganic chemical vapor deposition

Journal of applied physics, 1996-05, Vol.79 (10), p.8054-8059

1996

Volltextzugriff (PDF)

Rapid-Thermal-Processed BaTiO 3 Thin Films Deposited by Liquid-Source Misted Chemical Deposition

Japanese Journal of Applied Physics, 1998-03, Vol.37 (3R), p.885

1998

Volltextzugriff (PDF)

MOSFETs

Guide to State-of-the-Art Electron Devices, 2013, p.21-36

Burghartz, Joachim N

1, 2013

Volltextzugriff (PDF)

HOT ELECTRONS IN THIN GOLD FILMS

SZE, SIMON MIN

1963

Volltextzugriff (PDF)

High performance and high reliability polysilicon thin-film transistors with multiple nano-wire channels

IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004, 2004, p.777-780

2004

Volltextzugriff (PDF)

Integrated One Diode―One Resistor Architecture in Nanopillar SiOx Resistive Switching Memory by Nanosphere Lithography

Nano letters, 2014-02, Vol.14 (2), p.813-818

2014

Volltextzugriff (PDF)

Physical and chemical mechanisms in oxide-based resistance random access memory

Nanoscale research letters, 2015-03, Vol.10 (1), p.120-120, Article 120

2015

Volltextzugriff (PDF)

Mobility enhancement for high stability tungsten-doped indium-zinc oxide thin film transistors with a channel passivation layer

RSC advances, 2018-01, Vol.8 (13), p.6925-693

2018

Volltextzugriff (PDF)

Characteristics and Mechanisms of Silicon-Oxide-Based Resistance Random Access Memory

IEEE electron device letters, 2013-03, Vol.34 (3), p.399-401

2013

Volltextzugriff (PDF)

Influence of electrode material on the resistive memory switching property of indium gallium zinc oxide thin films

Applied physics letters, 2010-06, Vol.96 (26), p.262110-262110-3

2010

Volltextzugriff (PDF)

Integrated One Diode–One Resistor Architecture in Nanopillar SiO x Resistive Switching Memory by Nanosphere Lithography

Nano letters, 2014-02, Vol.14 (2), p.813-818

2014

Volltextzugriff (PDF)

Analysis of Edge Effect Occurring in Non-Volatile Ferroelectric Transistors

IEEE electron device letters, 2021-03, Vol.42 (3), p.315-318

2021

Volltextzugriff (PDF)

Resistive Switching Mechanism of Oxygen-Rich Indium Tin Oxide Resistance Random Access Memory

IEEE electron device letters, 2016-04, Vol.37 (4), p.408-411

2016

Volltextzugriff (PDF)

Bipolar Resistive RAM Characteristics Induced by Nickel Incorporated Into Silicon Oxide Dielectrics for IC Applications

IEEE electron device letters, 2012-12, Vol.33 (12), p.1696-1698

2012

Volltextzugriff (PDF)

Characterization of Oxygen Accumulation in Indium-Tin-Oxide for Resistance Random Access Memory

IEEE electron device letters, 2014-06, Vol.35 (6), p.630-632

2014

Volltextzugriff (PDF)

1 – 25 von 113

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(104)
Mit Volltextzugriff
(110)

Publikationsform

Sprache

Englisch
(113)
Japanisch
(30)

Erscheinungsjahr

n.n

Thema

Science & Technology
(75)
Technology
(53)
Physical Sciences
(46)
Physics
(44)
Physics, Applied
(40)
Engineering
(34)
Engineering, Electrical & Electronic
(33)
Random Access Memory
(24)
Materials Science
(23)
Switches
(23)
Electrodes
(22)
Materials Science, Multidisciplinary
(21)
Exact Sciences And Technology
(19)
Nonvolatile Memory
(19)
Resistance
(19)
Electronics
(16)
Rram
(15)
Applied Sciences
(14)
Semiconductor Electronics. Microelectronics. Optoelectronics. Solid State Devices
(14)
Tin
(14)

15 weitere anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

Overview of emerging nonvolatile memory technologies

Role of environmental and annealing conditions on the passivation-free in-Ga–Zn–O TFT

Physics of Semiconductor Devices

Effects of rapid thermal annealing on Si delta-doped GaInP grown by low pressure metalorganic chemical vapor deposition

Silicon delta doping of GaInP grown by low-pressure metalorganic chemical vapor deposition

ION-IMPLANTATION TREATMENT (Ba, Sr)TiO3 THIN FILMS

Thermal Stability of Co-Sputtered Ru–Ti Alloy Electrodes for Dynamic Random Access Memory Applications

Effects of O sub(2) plasma treatment on the electric and dielectric characteristics of Ba sub(0.7)Sr sub(0.3)TiO sub(3) thin films

Ion-Implantation Treatment (Ba, Sr)TiO 3 Thin Films

Effects of O2 plasma treatment on the electric and dielectric characteristics of Ba0.7Sr0.3TiO3 thin films

Growth and electrical characterization of Si delta-doped GaInP by low pressure metalorganic chemical vapor deposition

Rapid-Thermal-Processed BaTiO 3 Thin Films Deposited by Liquid-Source Misted Chemical Deposition

MOSFETs

HOT ELECTRONS IN THIN GOLD FILMS

High performance and high reliability polysilicon thin-film transistors with multiple nano-wire channels

Integrated One Diode―One Resistor Architecture in Nanopillar SiOx Resistive Switching Memory by Nanosphere Lithography

Physical and chemical mechanisms in oxide-based resistance random access memory

Mobility enhancement for high stability tungsten-doped indium-zinc oxide thin film transistors with a channel passivation layer

Characteristics and Mechanisms of Silicon-Oxide-Based Resistance Random Access Memory

Influence of electrode material on the resistive memory switching property of indium gallium zinc oxide thin films

Integrated One Diode–One Resistor Architecture in Nanopillar SiO x Resistive Switching Memory by Nanosphere Lithography

Analysis of Edge Effect Occurring in Non-Volatile Ferroelectric Transistors

Resistive Switching Mechanism of Oxygen-Rich Indium Tin Oxide Resistance Random Access Memory

Bipolar Resistive RAM Characteristics Induced by Nickel Incorporated Into Silicon Oxide Dielectrics for IC Applications

Characterization of Oxygen Accumulation in Indium-Tin-Oxide for Resistance Random Access Memory

Suchergebnisse filtern