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Metastable nature of InN and In-rich InGaN alloys

Journal of crystal growth, 2014-10, Vol.403, p.83-89

2014

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Plasma-assisted MBE growth and characterization of InN on sapphire

Journal of crystal growth, 2004-08, Vol.269 (1), p.1-9

2004

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Demultiplexed single-photon source with a quantum dot coupled to microresonator

Journal of luminescence, 2023-01, Vol.253, p.119496, Article 119496

2023

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Excitons and Biexcitons in Spheroidal Quantum Dots [A.sub.2][B.sub.6]

Physics of the solid state, 2018-08, Vol.60 (8), p.1510

2018

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Biexciton Binding Energy in Spherical Quantum Dots with [[GAMMA].sub.8] Valence Band

Semiconductors (Woodbury, N.Y.), 2018-05, Vol.52 (5), p.554

2018

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Recombination of free and bound excitons in GaN

Physica Status Solidi (b), 2008-09, Vol.245 (9), p.1723-1740

2008

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Selective area growth of N-polar GaN nanorods by plasma-assisted MBE on micro-cone-patterned c-sapphire substrates

Journal of crystal growth, 2017-11, Vol.477, p.207-211

2017

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Transient photoluminescence of shallow donor bound excitons in GaN

Physical review. B, Condensed matter and materials physics, 2010-12, Vol.82, p.235202

2010

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Density of States and Photoluminescence Spectra in the Dense Arrays of Epitaxial CdSe/ZnSe Quantum Dots with Gaussian Potential Profile

Acta physica Polonica, A, 2016-01, Vol.129 (1a), p.A-107-A-110

2016

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Site-Controlled Growth of GaN Nanorods with Inserted InGaN Quantum Wells on p,-Cone Patterned Sapphire Substrates by Plasma-Assisted MBE. (XXV INTERNATIONAL SYMPOSIUM "NANOSTRUCTURES: PHYSICS AND TECHNOLOGY", SAINT PETERSBURG, RUSSIA, JUNE 26-30, 2017

Semiconductors (Woodbury, N.Y.), 2018-05, Vol.52 (5), p.667

2018

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Förster Energy Transfer in Arrays of Epitaxial CdSe/ZnSe Quantum Dots Involving Bright and Dark Excitons

Physics of the solid state, 2018-08, Vol.60 (8), p.1590-1594

2018

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AlGaN nanostructures with extremely high quantum yield at 300 K

Physics of the solid state, 2016-11, Vol.58 (11), p.2261-2266

2016

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AlGaN quantum well structures for deep-UV LEDs grown by plasma-assisted MBE using sub-monolayer digital-alloying technique

Journal of crystal growth, 2009-03, Vol.311 (7), p.2080-2083

2009

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Resonance energy transfer in a dense array of II–VI quantum dots

Physics of the solid state, 2016-11, Vol.58 (11), p.2256-2260

2016

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Defect-induced island formation in CdSe/ZnSe structures

Journal of crystal growth, 2000-06, Vol.214, p.727-731

2000

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Recent developments in the III-nitride materials

Physica Status Solidi (b), 2007-06, Vol.244 (6), p.1759-1768

2007

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Dynamics of excitons near the mobility edge in CdSe/ZnSe superlattices

Journal of crystal growth, 2000-06, Vol.214, p.806-809, Article 806

2000

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Temperature switching of cavity modes in InN microcrystals

Semiconductors (Woodbury, N.Y.), 2015-11, Vol.49 (11), p.1435-1439

2015

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WITHDRAWN: Resonant photonic crystals based on van der Waals heterostructures for effective light pulse retardation

Superlattices and microstructures, 2018-02

2018

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Photonic crystals and Bragg gratings for the mid-IR and terahertz spectral ranges

Semiconductors (Woodbury, N.Y.), 2013-12, Vol.47 (12), p.1570-1573

2013

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AlGaN Quantum Well Heterostructures for Mid-Ultraviolet Emitters with Improved Room Temperature Quantum Efficiency

Acta physica Polonica, A, 2014-11, Vol.126 (5), p.1140-1142

2014

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Optically pumped lasing at 300.4 nm in AlGaN MQW structures grown by plasma-assisted molecular beam epitaxy on c-Al2O3

Physica status solidi. A, Applications and materials science, 2010-06, Vol.207 (6), p.1313-1317

2010

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Quantum-size stark effect in semiconductor microcrystals

Journal of luminescence, 1990-03, Vol.46 (2), p.97-100

1990

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From extended defects and interfaces to point defects in three dimensions—The case of InxGa1−xN

Physica. B, Condensed matter, 2007-12, Vol.401-402, p.639-645

2007

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Plasma-assisted MBE of InGaN epilayers with atomically smooth and nanocolumnar morphology, grown on MOVPE GaN/Al2O3 templates

Journal of crystal growth, 2007-04, Vol.301-302, p.469-472

2007

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Metastable nature of InN and In-rich InGaN alloys

Plasma-assisted MBE growth and characterization of InN on sapphire

Demultiplexed single-photon source with a quantum dot coupled to microresonator

Excitons and Biexcitons in Spheroidal Quantum Dots [A.sub.2][B.sub.6]

Biexciton Binding Energy in Spherical Quantum Dots with [[GAMMA].sub.8] Valence Band

Recombination of free and bound excitons in GaN

Selective area growth of N-polar GaN nanorods by plasma-assisted MBE on micro-cone-patterned c-sapphire substrates

Transient photoluminescence of shallow donor bound excitons in GaN

Density of States and Photoluminescence Spectra in the Dense Arrays of Epitaxial CdSe/ZnSe Quantum Dots with Gaussian Potential Profile

Site-Controlled Growth of GaN Nanorods with Inserted InGaN Quantum Wells on p,-Cone Patterned Sapphire Substrates by Plasma-Assisted MBE. (XXV INTERNATIONAL SYMPOSIUM "NANOSTRUCTURES: PHYSICS AND TECHNOLOGY", SAINT PETERSBURG, RUSSIA, JUNE 26-30, 2017

Förster Energy Transfer in Arrays of Epitaxial CdSe/ZnSe Quantum Dots Involving Bright and Dark Excitons

AlGaN nanostructures with extremely high quantum yield at 300 K

AlGaN quantum well structures for deep-UV LEDs grown by plasma-assisted MBE using sub-monolayer digital-alloying technique

Resonance energy transfer in a dense array of II–VI quantum dots

Defect-induced island formation in CdSe/ZnSe structures

Recent developments in the III-nitride materials

Dynamics of excitons near the mobility edge in CdSe/ZnSe superlattices

Temperature switching of cavity modes in InN microcrystals

WITHDRAWN: Resonant photonic crystals based on van der Waals heterostructures for effective light pulse retardation

Photonic crystals and Bragg gratings for the mid-IR and terahertz spectral ranges

AlGaN Quantum Well Heterostructures for Mid-Ultraviolet Emitters with Improved Room Temperature Quantum Efficiency

Optically pumped lasing at 300.4 nm in AlGaN MQW structures grown by plasma-assisted molecular beam epitaxy on c-Al2O3

Quantum-size stark effect in semiconductor microcrystals

From extended defects and interfaces to point defects in three dimensions—The case of InxGa1−xN

Plasma-assisted MBE of InGaN epilayers with atomically smooth and nanocolumnar morphology, grown on MOVPE GaN/Al2O3 templates

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