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InSe as a case between 3D and 2D layered crystals for excitons

Nature communications, 2019-08, Vol.10 (1), p.3479-8, Article 3479

2019

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Strongly Confined Excitons in GaN/AlN Nanostructures with Atomically Thin GaN Layers for Efficient Light Emission in Deep-Ultraviolet

Nano letters, 2020-01, Vol.20 (1), p.158-165

2020

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Multiwall MoS2 tubes as optical resonators

Applied physics letters, 2018-09, Vol.113 (10)

2018

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Insight into the performance of multi-color InGaN/GaN nanorod light emitting diodes

Scientific reports, 2018-05, Vol.8 (1), p.7311-8, Article 7311

2018

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InAs/AlGaAs quantum dots for single-photon emission in a red spectral range

Scientific reports, 2018-03, Vol.8 (1), p.5299-6, Article 5299

2018

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Localization and transient emission properties in InGaN/GaN quantum wells of different polarities within core-shell nanorods

Nanoscale, 2019-01, Vol.11 (1), p.193-199

2019

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The Cavity-Effect in Site-Controlled GaN Nanocolumns with InGaN Insertions

Semiconductors (Woodbury, N.Y.), 2019-12, Vol.53 (16), p.2085-2089

2019

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Recombination of free and bound excitons in GaN

Physica Status Solidi (b), 2008-09, Vol.245 (9), p.1723-1740

2008

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Influence of excitonic oscillator strengths on the optical properties of GaN and ZnO

Physical review. B, Condensed matter and materials physics, 2014-07, Vol.90 (4), Article 045204

2014

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Mie resonances, infrared emission, and the band gap of InN

Physical review letters, 2004-03, Vol.92 (11), p.117407-117407, Article 117407

2004

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Delay and distortion of slow light pulses by excitons in ZnO

Physical review. B, Condensed matter and materials physics, 2011-08, Vol.84 (7), p.075202, Article 075202

2011

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Metastable nature of InN and In-rich InGaN alloys

Journal of crystal growth, 2014-10, Vol.403, p.83-89

2014

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Recent developments in the III-nitride materials

Physica Status Solidi (b), 2007-06, Vol.244 (6), p.1759-1768

2007

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Temperature activation of indirect exciton in nanostructures based on MoS2

Journal of physics. Conference series, 2020-03, Vol.1482 (1)

2020

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Effect of Strain on the Fine Structure of Exciton States in Atomically Thin Transition Metal Dichalcogenides

Bulletin of the Russian Academy of Sciences. Physics, 2023-12, Vol.87 (Suppl 1), p.S52-S59

2023

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Two-Dimensional Excitons in Multiple GaN/AlN Monolayer Quantum Wells

JETP letters, 2021-04, Vol.113 (8), p.504-509

2021

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Exciton Structure and Recombination Dynamics in GaSe Crystals

Bulletin of the Russian Academy of Sciences. Physics, 2023-12, Vol.87 (Suppl 1), p.S60-S65

2023

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Plasma-assisted MBE growth and characterization of InN on sapphire

Journal of crystal growth, 2004-08, Vol.269 (1), p.1-9

2004

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Polarization Conversion in MoS2 Flakes

Semiconductors (Woodbury, N.Y.), 2020-11, Vol.54 (11), p.1509-1513

2020

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Source of Indistinguishable Single Photons Based on Epitaxial InAs/GaAs Quantum Dots for Integration in Quantum Computing Schemes

JETP letters, 2021-02, Vol.113 (4), p.252-258

2021

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Indirect-to-direct band-gap transition in few-layer β -InSe as probed by photoluminescence spectroscopy

Physical review materials, 2024-01, Vol.8 (1), Article 014001

2024

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Recombination dynamics in arrays of II–VI epitaxial quantum dots with Förster resonance energy transfer

Physica Status Solidi. B: Basic Solid State Physics, 2017-04, Vol.254 (4), p.np-n/a

2017

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Direct observation of split-mode exciton-polaritons in a single MoS2 nanotube

Nanoscale horizons, 2024-05, Vol.9 (6), p.968-975

2024

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Direct observation of split-mode exciton-polaritons in a single MoS 2 nanotube

Nanoscale horizons, 2024-05, Vol.9 (6), p.968-975

2024

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Slow light in resonant photonic crystals with a complex unit cell

JETP letters, 2017, Vol.105 (1), p.8-12

2017

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1 – 25 von 1.062

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InSe as a case between 3D and 2D layered crystals for excitons

Strongly Confined Excitons in GaN/AlN Nanostructures with Atomically Thin GaN Layers for Efficient Light Emission in Deep-Ultraviolet

Multiwall MoS2 tubes as optical resonators

Insight into the performance of multi-color InGaN/GaN nanorod light emitting diodes

InAs/AlGaAs quantum dots for single-photon emission in a red spectral range

Localization and transient emission properties in InGaN/GaN quantum wells of different polarities within core-shell nanorods

The Cavity-Effect in Site-Controlled GaN Nanocolumns with InGaN Insertions

Recombination of free and bound excitons in GaN

Influence of excitonic oscillator strengths on the optical properties of GaN and ZnO

Mie resonances, infrared emission, and the band gap of InN

Delay and distortion of slow light pulses by excitons in ZnO

Metastable nature of InN and In-rich InGaN alloys

Recent developments in the III-nitride materials

Temperature activation of indirect exciton in nanostructures based on MoS2

Effect of Strain on the Fine Structure of Exciton States in Atomically Thin Transition Metal Dichalcogenides

Two-Dimensional Excitons in Multiple GaN/AlN Monolayer Quantum Wells

Exciton Structure and Recombination Dynamics in GaSe Crystals

Plasma-assisted MBE growth and characterization of InN on sapphire

Polarization Conversion in MoS2 Flakes

Source of Indistinguishable Single Photons Based on Epitaxial InAs/GaAs Quantum Dots for Integration in Quantum Computing Schemes

Indirect-to-direct band-gap transition in few-layer β -InSe as probed by photoluminescence spectroscopy

Recombination dynamics in arrays of II–VI epitaxial quantum dots with Förster resonance energy transfer

Direct observation of split-mode exciton-polaritons in a single MoS2 nanotube

Direct observation of split-mode exciton-polaritons in a single MoS 2 nanotube

Slow light in resonant photonic crystals with a complex unit cell

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