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Matching of feedback inhibition with excitation ensures fidelity of information flow in the anterior piriform cortex

Neuroscience, 2014-09, Vol.275, p.519-530

2014

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Silicon-germanium BiCMOS HBT technology for wireless power amplifier applications

IEEE journal of solid-state circuits, 2004-10, Vol.39 (10), p.1605-1614

2004

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IEEE_Xplore

Frequency and bias-dependent modeling of correlated base and collector current RF noise in SiGe HBTs using quasi-static equivalent circuit

IEEE transactions on electron devices, 2006-03, Vol.53 (3), p.515-522

2006

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IEEE_Xplore

Proton radiation effects in 4H-SiC diodes and MOS capacitors

IEEE transactions on nuclear science, 2004-12, Vol.51 (6), p.3748-3752

2004

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IEEE_Xplore

Impact of proton irradiation on the static and dynamic characteristics of high-voltage 4H-SiC JBS switching diodes

IEEE transactions on nuclear science, 2003-12, Vol.50 (6), p.1821-1826

2003

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IEEE_Xplore

Normally-Off SiC VJFETs for 800 V and 1200 V Power Switching Applications

2008 20th International Symposium on Power Semiconductor Devices and IC's, 2008, p.260-262

2008

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IEEE_Xplore

4H-SiC power devices for use in power electronic motor control

Solid-state electronics, 1998-12, Vol.42 (12), p.2165-2176

1998

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The effects of high-dose gamma irradiation on high-voltage 4H-SiC Schottky diodes and the SiC-SiO/sub 2/ interface

IEEE transactions on nuclear science, 2001-12, Vol.48 (6), p.2229-2232

2001

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IEEE_Xplore

The effects of high-dose gamma irradiation on high-voltage 4H-SiC Schottky diodes and the SiC-SiO2 interface

IEEE transactions on nuclear science, 2001-12, Vol.48 (6), p.2229-2232

2001

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Record 2.8mΩ-cm2 1.9kV enhancement-mode SiC VJFETs

2009 21st International Symposium on Power Semiconductor Devices & IC's, 2009, p.335-338

2009

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IEEE_Xplore

Characterization and Modeling of Intermodulation Linearity in a 200 GHz SiGe HBT Technology

2006 Bipolar/BiCMOS Circuits and Technology Meeting, 2006, p.1-4

2006

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IEEE_Xplore

Implementation of a scalable and statistical VBIC model for large-signal and intermodulation distortion analysis of SiGe HBTs

2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278), 2002, Vol.3, p.2165-2168 vol.3

2002

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IEEE_Xplore

Generation and integration of scalable bipolar compact models [HBT example]

Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting, 2004, p.132-139

2004

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IEEE_Xplore

Comparison and optimization of edge termination techniques for SiC power devices

Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216), 2001, p.191-194

2001

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IEEE_Xplore

High-voltage (600 to 3 kV) silicon carbide diode development

APEC 2001. Sixteenth Annual IEEE Applied Power Electronics Conference and Exposition (Cat. No.01CH37181), 2001, Vol.2, p.1253-1257 vol.2

2001

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IEEE_Xplore

Silicon carbide power MOSFET technology

Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors, 1997, p.359-362

1997

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IEEE_Xplore

Predicting success in a first year engineering course: the role of study habits

FIE'99 Frontiers in Education. 29th Annual Frontiers in Education Conference. Designing the Future of Science and Engineering Education. Conference Proceedings (IEEE Cat. No.99CH37011, 1999, Vol.1, p.11A7/5 vol.1-11a5

1999

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IEEE_Xplore

Cell and tissue research, 1980-01, Vol.206 (1), p.35-40

1980

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Matching of feedback inhibition with excitation ensures fidelity of information flow in the anterior piriform cortex

Silicon-germanium BiCMOS HBT technology for wireless power amplifier applications

Frequency and bias-dependent modeling of correlated base and collector current RF noise in SiGe HBTs using quasi-static equivalent circuit

Proton radiation effects in 4H-SiC diodes and MOS capacitors

Impact of proton irradiation on the static and dynamic characteristics of high-voltage 4H-SiC JBS switching diodes

Normally-Off SiC VJFETs for 800 V and 1200 V Power Switching Applications

4H-SiC power devices for use in power electronic motor control

The effects of high-dose gamma irradiation on high-voltage 4H-SiC Schottky diodes and the SiC-SiO/sub 2/ interface

The effects of high-dose gamma irradiation on high-voltage 4H-SiC Schottky diodes and the SiC-SiO2 interface

Record 2.8mΩ-cm2 1.9kV enhancement-mode SiC VJFETs

Characterization and Modeling of Intermodulation Linearity in a 200 GHz SiGe HBT Technology

Implementation of a scalable and statistical VBIC model for large-signal and intermodulation distortion analysis of SiGe HBTs

Generation and integration of scalable bipolar compact models [HBT example]

Comparison and optimization of edge termination techniques for SiC power devices

High-voltage (600 to 3 kV) silicon carbide diode development

Silicon carbide power MOSFET technology

Predicting success in a first year engineering course: the role of study habits

Conjoint Behavioral Consultation: Promoting Family-School Connections and Interventions

Efficient energy transfer in organic thin films—implications for organic lasers

Listeriosis Due to Infection with a Catalase-Negative Strain of Listeria monocytogenes

Effect of temperature on the spectral line-narrowing in MEH-PPV

Temperature dependence of the spectral line narrowing and photoluminescence of MEH-PPV

Photophysics of an Alkyl Substituted Poly(p-phenylenevinylene)

Does neonatal androgen modulate uptake and retention of 3H-estradiol in gonadotrophs and lactotrophs?

Nuclear uptake and retention of androgen by the pituitary gland of the hamster and the rat

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