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Efficacy of plasma exchange in anti-Ro52 and anti-MDA5 antibody-positive dermatomyositis with progressive interstitial lung disease: a case report

Scandinavian journal of rheumatology, 2024-09, p.1-4

2024

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Hyper-Heuristic Based NSGA-III for the Many-Objective Quadratic Assignment Problem

Intelligent Systems, p.170-185

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4H-SiC Epi-Ready Substrate Qualification by Using Mirror Electron Microscope Inspection System

Materials science forum, 2020-07, Vol.1004, p.369-375

2020

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Multi-objective Quadratic Assignment Problem: An Approach Using a Hyper-Heuristic Based on the Choice Function

Intelligent Systems, p.136-150

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Preliminary study on the effects of movement velocity training of the upper limbs on gait ability in older adults: a nonrandomized controlled trial

Clinical interventions in aging, 2019-05, Vol.14, p.781-788

2019

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Baseline and changes in serum uric acid independently predict 11-year incidence of metabolic syndrome among community-dwelling women

Journal of endocrinological investigation, 2018-08, Vol.41 (8), p.959-968

2018

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Characterization of double Shockley-type stacking faults formed in lightly doped 4H-SiC epitaxial films

Journal of crystal growth, 2018-05, Vol.490, p.89-96

2018

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Interaction between gender and uric acid on hemoglobin A1c in community-dwelling persons

Journal of endocrinological investigation, 2018-04, Vol.41 (4), p.421-429

2018

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Development of Superconducting Tunnel Junction Photon Detectors with Cryogenic Preamplifier for COBAND Experiment

Proceedings of International Conference on Technology and Instrumentation in Particle Physics 2017, p.242-248

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Cardiac autonomic dysfunction in patients with progressive supranuclear palsy and corticobasal degeneration

Journal of the neurological sciences, 2017-10, Vol.381, p.849-849

2017

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Characterization of stacking faults with emission wavelengths of over 500 nm formed in 4H-SiC epitaxial films

Journal of crystal growth, 2017-10, Vol.476, p.99-106

2017

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Characterization of stacking faults with emission wavelengths of over 500nm formed in 4H-SiC epitaxial films

Journal of crystal growth, 2017-10, Vol.476, p.99-106

2017

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Relationship between Subjective Sleep Quality and Sleep/Arousal State and Activity

The Journal of Japanese Society of Stomatognathic Function, 2016, Vol.22(2), pp.132-133

2016

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睡眠の質の主観的評価と睡眠・覚醒状態との関連

日本顎口腔機能学会雑誌, 2016, Vol.22(2), pp.132-133

2016

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Comparative Study of Characteristics of Lateral MOSFETs Fabricated on 4H-SiC (11-20) and (1-100) Faces

Materials science forum, 2015-06, Vol.821-823, p.721-724

2015

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Systematic investigation on in-plane anisotropy of surface and buried channel mobility of metal-oxide-semiconductor field-effect-transistors on Si-, a-, and m-face 4H-SiC

Applied physics letters, 2015-03, Vol.106 (10)

2015

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Nitridation Effects of Gate Oxide on Channel Properties of SiC Trench MOSFETs

Materials science forum, 2014-02, Vol.778-780, p.615-618

2014

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Reliability Improvement and Optimization of Trench Orientation of 4H-SiC Trench-Gate Oxide

Materials science forum, 2014-02, Vol.778-780, p.537-540

2014

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Electrical Characteristics/Reliability Affected by Defects Analyzed by the Integrated Evaluation Platform for SiC Epitaxial Films

Materials science forum, 2014-02, Vol.778-780, p.979-984

2014

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Relation between Defects on 4H-SiC Epitaxial Surface and Gate Oxide Reliability

Materials science forum, 2013-01, Vol.740-742, p.745-748

2013

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The Integrated Evaluation Platform for SiC Wafers and Epitaxial Films

Materials science forum, 2013-01, Vol.740-742, p.451-454

2013

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Effects of Surface Morphological Defects and Crystallographic Defects on Reliability of Thermal Oxides on C-Face

Materials science forum, 2012-05, Vol.717-720, p.789-792

2012

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Dual neuroprotective pathways of a pro‐electrophilic compound via HSF‐1‐activated heat‐shock proteins and Nrf2‐activated phase 2 antioxidant response enzymes

Journal of neurochemistry, 2011-11, Vol.119 (3), p.569-578

2011

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Publisher's Note: "Annealing induced extended defects in as-grown and ion-implanted 4H-SiC epitaxial layers"[ J. Appl. Phys. 108 , 013511 ( 2010 ) ]

Journal of applied physics, 2010-10, Vol.108 (7), p.079901-079901-1

2010

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Annealing induced extended defects in as-grown and ion-implanted 4H-SiC epitaxial layers

Journal of applied physics, 2010-07, Vol.108 (1), p.013511-013511-8

2010

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Efficacy of plasma exchange in anti-Ro52 and anti-MDA5 antibody-positive dermatomyositis with progressive interstitial lung disease: a case report

Hyper-Heuristic Based NSGA-III for the Many-Objective Quadratic Assignment Problem

4H-SiC Epi-Ready Substrate Qualification by Using Mirror Electron Microscope Inspection System

Multi-objective Quadratic Assignment Problem: An Approach Using a Hyper-Heuristic Based on the Choice Function

Preliminary study on the effects of movement velocity training of the upper limbs on gait ability in older adults: a nonrandomized controlled trial

Baseline and changes in serum uric acid independently predict 11-year incidence of metabolic syndrome among community-dwelling women

Characterization of double Shockley-type stacking faults formed in lightly doped 4H-SiC epitaxial films

Interaction between gender and uric acid on hemoglobin A1c in community-dwelling persons

Development of Superconducting Tunnel Junction Photon Detectors with Cryogenic Preamplifier for COBAND Experiment

Cardiac autonomic dysfunction in patients with progressive supranuclear palsy and corticobasal degeneration

Characterization of stacking faults with emission wavelengths of over 500 nm formed in 4H-SiC epitaxial films

Characterization of stacking faults with emission wavelengths of over 500nm formed in 4H-SiC epitaxial films

Relationship between Subjective Sleep Quality and Sleep/Arousal State and Activity

睡眠の質の主観的評価と睡眠・覚醒状態との関連

Comparative Study of Characteristics of Lateral MOSFETs Fabricated on 4H-SiC (11-20) and (1-100) Faces

Systematic investigation on in-plane anisotropy of surface and buried channel mobility of metal-oxide-semiconductor field-effect-transistors on Si-, a-, and m-face 4H-SiC

Nitridation Effects of Gate Oxide on Channel Properties of SiC Trench MOSFETs

Reliability Improvement and Optimization of Trench Orientation of 4H-SiC Trench-Gate Oxide

Electrical Characteristics/Reliability Affected by Defects Analyzed by the Integrated Evaluation Platform for SiC Epitaxial Films

Relation between Defects on 4H-SiC Epitaxial Surface and Gate Oxide Reliability

The Integrated Evaluation Platform for SiC Wafers and Epitaxial Films

Effects of Surface Morphological Defects and Crystallographic Defects on Reliability of Thermal Oxides on C-Face

Dual neuroprotective pathways of a pro‐electrophilic compound via HSF‐1‐activated heat‐shock proteins and Nrf2‐activated phase 2 antioxidant response enzymes

Publisher's Note: "Annealing induced extended defects in as-grown and ion-implanted 4H-SiC epitaxial layers"[ J. Appl. Phys. 108 , 013511 ( 2010 ) ]

Annealing induced extended defects in as-grown and ion-implanted 4H-SiC epitaxial layers

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