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Half-bridge inverter using 4H-SiC gate turn-off thyristors

IEEE electron device letters, 2002-04, Vol.23 (4), p.194-196

2002

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Inductive switching of 4H-SiC gate turn-off thyristors

IEEE electron device letters, 2002-06, Vol.23 (6), p.318-320

2002

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Modeling the temperature response of 4H silicon carbide junction field-effect transistors

Journal of applied physics, 1997-06, Vol.81 (11), p.7687-7689

1997

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Silicon carbide FETs for high temperature nuclear environments

IEEE transactions on nuclear science, 1996-06, Vol.43 (3), p.1642-1648

1996

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Advances in Pulsed-Laser-Deposited AlN Thin Films for High-Temperature Capping, Device Passivation, and Piezoelectric-Based RF MEMS/NEMS Resonator Applications

Journal of electronic materials, 2006-04, Vol.35 (4), p.777-794

2006

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Modeling the electrical characteristics of n -channel 6H–SiC junction-field-effect transistors as a function of temperature

Journal of applied physics, 1996-01, Vol.79 (1), p.545-552

1996

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Charge Pumping Measurements on SiC MOSFETs

Materials science forum, 1998-01, Vol.264-268, p.985-988

1998

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Analysis of neutron damage in high-temperature silicon carbide JFETs

IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), 1994-12, Vol.41 (6), p.1884-1894

1994

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15-kV single-bias all-optical ETO thyristor

2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD), 2014, p.313-316

2014

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Evaluation of Si and SiC SGTOs for High-Action Army Applications

IEEE transactions on magnetics, 2009-01, Vol.45 (1), p.402-406

2009

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AlN thin films deposited by pulsed laser ablation, sputtering and filtered arc techniques

Thin solid films, 2001-11, Vol.398, p.575-580

2001

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Advances in pulsed-laser-deposited AIN thin films for high-temperature capping, device passivation, and piezoelectric-based RF MEMS/NEMS resonator applications

Journal of electronic materials, 2006-04, Vol.35 (4), p.777-794

2006

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Pulsed power capacitor development and outlook

2015 IEEE Pulsed Power Conference (PPC), 2015, p.1-7

2015

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(Invited) Reliability-Driven SiC Power Device Development for Army Applications

ECS transactions, 2011, Vol.41 (8), p.9-15

2011

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Evaluation of Advanced Si and SiC Switching Components for Army Pulsed Power Applications

IEEE transactions on magnetics, 2007-01, Vol.43 (1), p.259-264

2007

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Development of SiC multi-chip module for pulse switching at 10 kV, 100 kA

2015 IEEE Pulsed Power Conference (PPC), 2015, p.1-5

2015

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Development of metallized polypropylene capacitor reliability in pulse power systems

2015 IEEE Pulsed Power Conference (PPC), 2015, p.1-6

2015

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Physics-based numerical modeling and characterization of 6H -silicon-carbide metal–oxide–semiconductor field-effect transistors

Journal of applied physics, 2002-10, Vol.92 (7), p.4053-4061

2002

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Mobility in 6H-SiC n-Channel MOSFETs

Materials science forum, 2000-05, Vol.338-342, p.1121-1124

2000

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Review of high voltage silicon carbide device research at the army research laboratory

2011 Abstracts IEEE International Conference on Plasma Science, 2011, p.1-1

2011

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Device development and pulse performance of super-12 Si SGTO

2011 Abstracts IEEE International Conference on Plasma Science, 2011, p.1-1

2011

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Pulsed Laser Deposition: A Novel Growth Technique for Wide-Bandgap Semiconductor Research

Materials science forum, 2000-05, Vol.338-342, p.1503-1506

2000

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Advances in pulsed-laser-deposited AlN thin films for high-temperature capping, device passivation, and piezoelectric-based RF MEMS/NEMS resonator applications: Group III Nitrides, SiC, and ZnO

Journal of electronic materials, 2006, Vol.35 (4), p.777-794

2006

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Leakage currents in high-quality pulsed-laser deposited aluminum nitride on 6H silicon carbide from 25 to 450 °C

Journal of applied physics, 1999-10, Vol.86 (7), p.4052-4054

1999

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High temperature inductive switching of SiC GTO and diode

Conference Record of the Twenty-Fifth International Power Modulator Symposium, 2002 and 2002 High-Voltage Workshop, 2002, p.207-209

2002

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Half-bridge inverter using 4H-SiC gate turn-off thyristors

Inductive switching of 4H-SiC gate turn-off thyristors

Modeling the temperature response of 4H silicon carbide junction field-effect transistors

Silicon carbide FETs for high temperature nuclear environments

Advances in Pulsed-Laser-Deposited AlN Thin Films for High-Temperature Capping, Device Passivation, and Piezoelectric-Based RF MEMS/NEMS Resonator Applications

Modeling the electrical characteristics of n -channel 6H–SiC junction-field-effect transistors as a function of temperature

Charge Pumping Measurements on SiC MOSFETs

Analysis of neutron damage in high-temperature silicon carbide JFETs

15-kV single-bias all-optical ETO thyristor

Evaluation of Si and SiC SGTOs for High-Action Army Applications

AlN thin films deposited by pulsed laser ablation, sputtering and filtered arc techniques

Advances in pulsed-laser-deposited AIN thin films for high-temperature capping, device passivation, and piezoelectric-based RF MEMS/NEMS resonator applications

Pulsed power capacitor development and outlook

(Invited) Reliability-Driven SiC Power Device Development for Army Applications

Evaluation of Advanced Si and SiC Switching Components for Army Pulsed Power Applications

Development of SiC multi-chip module for pulse switching at 10 kV, 100 kA

Development of metallized polypropylene capacitor reliability in pulse power systems

Physics-based numerical modeling and characterization of 6H -silicon-carbide metal–oxide–semiconductor field-effect transistors

Mobility in 6H-SiC n-Channel MOSFETs

Review of high voltage silicon carbide device research at the army research laboratory

Device development and pulse performance of super-12 Si SGTO

Pulsed Laser Deposition: A Novel Growth Technique for Wide-Bandgap Semiconductor Research

Advances in pulsed-laser-deposited AlN thin films for high-temperature capping, device passivation, and piezoelectric-based RF MEMS/NEMS resonator applications: Group III Nitrides, SiC, and ZnO

Leakage currents in high-quality pulsed-laser deposited aluminum nitride on 6H silicon carbide from 25 to 450 °C

High temperature inductive switching of SiC GTO and diode

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