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Radiation Hardness Assurance Testing of Microelectronic Devices and Integrated Circuits: Radiation Environments, Physical Mechanisms, and Foundations for Hardness Assurance

IEEE transactions on nuclear science, 2013-06, Vol.60 (3), p.2074-2100

2013

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Current and Future Challenges in Radiation Effects on CMOS Electronics

IEEE transactions on nuclear science, 2010-08, Vol.57 (4), p.1747-1763

2010

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Radiation Effects on Ytterbium- and Ytterbium/Erbium-Doped Double-Clad Optical Fibers

IEEE transactions on nuclear science, 2009-12, Vol.56 (6), p.3293-3299

2009

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Investigation of the Propagation Induced Pulse Broadening (PIPB) Effect on Single Event Transients in SOI and Bulk Inverter Chains

IEEE transactions on nuclear science, 2008-12, Vol.55 (6), p.2842-2853

2008

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Single-Event Upsets and Multiple-Bit Upsets on a 45 nm SOI SRAM

IEEE transactions on nuclear science, 2009-12, Vol.56 (6), p.3499-3504

2009

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32 and 45 nm Radiation-Hardened-by-Design (RHBD) SOI Latches

IEEE transactions on nuclear science, 2011-12, Vol.58 (6), p.2702-2710

2011

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Hardness Assurance for Proton Direct Ionization-Induced SEEs Using a High-Energy Proton Beam

IEEE transactions on nuclear science, 2014-12, Vol.61 (6), p.2904-2914

2014

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Impact of Heavy Ion Energy and Nuclear Interactions on Single-Event Upset and Latchup in Integrated Circuits

IEEE transactions on nuclear science, 2007-12, Vol.54 (6), p.2303-2311

2007

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Radiation Effects in MOS Oxides

IEEE transactions on nuclear science, 2008-08, Vol.55 (4), p.1833-1853

2008

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Proton- and Gamma-Induced Effects on Erbium-Doped Optical Fibers

IEEE transactions on nuclear science, 2007-12, Vol.54 (6), p.2426-2434

2007

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Proton-Induced Upsets in SLC and MLC NAND Flash Memories

IEEE transactions on nuclear science, 2013-12, Vol.60 (6), p.4130-4135

2013

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The Effects of Neutron Energy and High-Z Materials on Single Event Upsets and Multiple Cell Upsets

IEEE transactions on nuclear science, 2011-12, Vol.58 (6), p.2591-2598

2011

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Total Ionizing Dose and Single Event Effects Hardness Assurance Qualification Issues for Microelectronics

IEEE transactions on nuclear science, 2008-08, Vol.55 (4), p.1926-1946

2008

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Estimation of Heavy-Ion LET Thresholds in Advanced SOI IC Technologies From Two-Photon Absorption Laser Measurements

IEEE transactions on nuclear science, 2010-08, Vol.57 (4), p.1827-1834

2010

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Influence of Beam Conditions and Energy for SEE Testing

IEEE transactions on nuclear science, 2012-08, Vol.59 (4), p.1149-1160

2012

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Production and propagation of single-event transients in high-speed digital logic ICs

IEEE transactions on nuclear science, 2004-12, Vol.51 (6), p.3278-3284

2004

Volltextzugriff (PDF)

Proton-Induced Upsets in 41-nm NAND Floating Gate Cells

IEEE transactions on nuclear science, 2012-08, Vol.59 (4), p.838-844

2012

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Radiation Hardness Assurance Testing of Microelectronic Devices and Integrated Circuits: Test Guideline for Proton and Heavy Ion Single-Event Effects

IEEE transactions on nuclear science, 2013-06, Vol.60 (3), p.2101-2118

2013

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Single-Event Upsets and Distributions in Radiation-Hardened CMOS Flip-Flop Logic Chains

IEEE transactions on nuclear science, 2011-12, Vol.58 (6), p.2695-2701

2011

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The Effect of High-Z Materials on Proton-Induced Charge Collection

IEEE transactions on nuclear science, 2010-12, Vol.57 (6), p.3212-3218

2010

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Hardness Assurance Testing for Proton Direct Ionization Effects

IEEE transactions on nuclear science, 2012-08, Vol.59 (4), p.1197-1202

2012

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Radiation effects in SOI technologies

IEEE transactions on nuclear science, 2003-06, Vol.50 (3), p.522-538

2003

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Worst-case bias during total dose irradiation of SOI transistors

IEEE transactions on nuclear science, 2000-12, Vol.47 (6), p.2183-2188

2000

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Statistical Analysis of Heavy-Ion Induced Gate Rupture in Power MOSFETs-Methodology for Radiation Hardness Assurance

IEEE transactions on nuclear science, 2012-12, Vol.59 (6), p.2920-2929

2012

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Development of a Radiation-Hardened Lateral Power MOSFET for POL Applications

IEEE transactions on nuclear science, 2009-12, Vol.56 (6), p.3456-3462

2009

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Radiation Hardness Assurance Testing of Microelectronic Devices and Integrated Circuits: Radiation Environments, Physical Mechanisms, and Foundations for Hardness Assurance

Current and Future Challenges in Radiation Effects on CMOS Electronics

Radiation Effects on Ytterbium- and Ytterbium/Erbium-Doped Double-Clad Optical Fibers

Investigation of the Propagation Induced Pulse Broadening (PIPB) Effect on Single Event Transients in SOI and Bulk Inverter Chains

Single-Event Upsets and Multiple-Bit Upsets on a 45 nm SOI SRAM

32 and 45 nm Radiation-Hardened-by-Design (RHBD) SOI Latches

Hardness Assurance for Proton Direct Ionization-Induced SEEs Using a High-Energy Proton Beam

Impact of Heavy Ion Energy and Nuclear Interactions on Single-Event Upset and Latchup in Integrated Circuits

Radiation Effects in MOS Oxides

Proton- and Gamma-Induced Effects on Erbium-Doped Optical Fibers

Proton-Induced Upsets in SLC and MLC NAND Flash Memories

The Effects of Neutron Energy and High-Z Materials on Single Event Upsets and Multiple Cell Upsets

Total Ionizing Dose and Single Event Effects Hardness Assurance Qualification Issues for Microelectronics

Estimation of Heavy-Ion LET Thresholds in Advanced SOI IC Technologies From Two-Photon Absorption Laser Measurements

Influence of Beam Conditions and Energy for SEE Testing

Production and propagation of single-event transients in high-speed digital logic ICs

Proton-Induced Upsets in 41-nm NAND Floating Gate Cells

Radiation Hardness Assurance Testing of Microelectronic Devices and Integrated Circuits: Test Guideline for Proton and Heavy Ion Single-Event Effects

Single-Event Upsets and Distributions in Radiation-Hardened CMOS Flip-Flop Logic Chains

The Effect of High-Z Materials on Proton-Induced Charge Collection

Hardness Assurance Testing for Proton Direct Ionization Effects

Radiation effects in SOI technologies

Worst-case bias during total dose irradiation of SOI transistors

Statistical Analysis of Heavy-Ion Induced Gate Rupture in Power MOSFETs-Methodology for Radiation Hardness Assurance

Development of a Radiation-Hardened Lateral Power MOSFET for POL Applications

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