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Effects of Polycrystalline Cu Substrate on Graphene Growth by Chemical Vapor Deposition

Nano letters, 2011-11, Vol.11 (11), p.4547-4554

2011

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Role of Pressure in the Growth of Hexagonal Boron Nitride Thin Films from Ammonia-Borane

Chemistry of materials, 2016-06, Vol.28 (12), p.4169-4179

2016

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Electronic Hybridization of Large-Area Stacked Graphene Films

ACS nano, 2013-01, Vol.7 (1), p.637-644

2013

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Reducing flicker noise in chemical vapor deposition graphene field-effect transistors

Applied physics letters, 2016-02, Vol.108 (7)

2016

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Multi-scale alignment to buried atom-scale devices using Kelvin probe force microscopy

Nanotechnology reviews (Berlin), 2024-02, Vol.13 (1), p.242-6

2024

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Atom‐by‐Atom Fabrication of Single and Few Dopant Quantum Devices

Advanced functional materials, 2019-12, Vol.29 (52), p.n/a

2019

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Atom-by-Atom Construction of a Cyclic Artificial Molecule in Silicon

Nano letters, 2018-12, Vol.18 (12), p.7502-7508

2018

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Nitrogen-Doped Graphene and Twisted Bilayer Graphene via Hyperthermal Ion Implantation with Depth Control

ACS nano, 2016-03, Vol.10 (3), p.3714-3722

2016

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Electronic transport and localization in nitrogen-doped graphene devices using hyperthermal ion implantation

Physical review. B, 2016-04, Vol.93 (16), Article 161409

2016

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Removal of sodium dodecyl sulfate surfactant from aqueous dispersions of single-wall carbon nanotubes

Journal of colloid and interface science, 2017-06, Vol.495, p.140-148

2017

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Raman signature of defected twisted bilayer graphene

Carbon (New York), 2015-11, Vol.93, p.250-257

2015

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Atomic-scale control of tunneling in donor-based devices

Communications physics, 2020-05, Vol.3 (1), Article 82

2020

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Tunable Radiation Response in Hybrid Organic–Inorganic Gate Dielectrics for Low-Voltage Graphene Electronics

ACS applied materials & interfaces, 2016-03, Vol.8 (8), p.5058-5064

2016

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Photothermal alternative to device fabrication using atomic precision advanced manufacturing techniques

Journal of Micro/Nanopatterning, Materials, and Metrology, 2021-01, Vol.20 (1)

2021

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Low thermal budget high-k/metal surface gate for buried donor-based devices

JPhys materials, 2020-07, Vol.3 (3), p.35002

2020

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Low-Resistance, High-Yield Electrical Contacts to Atom Scale Si:P Devices Using Palladium Silicide

Physical review applied, 2019-03, Vol.11 (3), Article 034071

2019

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Dry graphene transfer print to polystyrene and ultra-high molecular weight polyethylene − Detailed chemical, structural, morphological and electrical characterization

Carbon (New York), 2015-05, Vol.86, p.288-300

2015

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Modeling Assisted Room Temperature Operation of Atomic Precision Advanced Manufacturing Devices

2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2020, p.277-280

2020

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Modeling and Assessment of Atomic Precision Advanced Manufacturing (APAM) Enabled Vertical Tunneling Field Effect Transistor

2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2021, p.102-106

2021

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Quantum Transport in Si:P δ-Layer Wires

2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2020, p.181-184

2020

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Electron-electron interactions in low-dimensional Si:P delta layers

Physical review. B, 2020-06, Vol.101 (24), p.1, Article 245419

2020

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A Model for Atomic Precision p-Type Doping with Diborane on Si(100)-2×1

Journal of physical chemistry. C, 2021-01, Vol.125 (1), p.481-488

2021

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A Model for Atomic Precision p-Type Doping with Diborane on Si(100)-2×1

Journal of physical chemistry. C, 2021-01, Vol.125 (1)

2021

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Vacuum ultraviolet radiation effects on two-dimensional MoS2 field-effect transistors

Applied physics letters, 2017-02, Vol.110 (7)

2017

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Suppression of Midinfrared Plasma Resonance Due to Quantum Confinement in δ -Doped Silicon

Physical review applied, 2023-08, Vol.20 (2), Article 024043

2023

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Effects of Polycrystalline Cu Substrate on Graphene Growth by Chemical Vapor Deposition

Role of Pressure in the Growth of Hexagonal Boron Nitride Thin Films from Ammonia-Borane

Electronic Hybridization of Large-Area Stacked Graphene Films

Reducing flicker noise in chemical vapor deposition graphene field-effect transistors

Multi-scale alignment to buried atom-scale devices using Kelvin probe force microscopy

Atom‐by‐Atom Fabrication of Single and Few Dopant Quantum Devices

Atom-by-Atom Construction of a Cyclic Artificial Molecule in Silicon

Nitrogen-Doped Graphene and Twisted Bilayer Graphene via Hyperthermal Ion Implantation with Depth Control

Electronic transport and localization in nitrogen-doped graphene devices using hyperthermal ion implantation

Removal of sodium dodecyl sulfate surfactant from aqueous dispersions of single-wall carbon nanotubes

Raman signature of defected twisted bilayer graphene

Atomic-scale control of tunneling in donor-based devices

Tunable Radiation Response in Hybrid Organic–Inorganic Gate Dielectrics for Low-Voltage Graphene Electronics

Photothermal alternative to device fabrication using atomic precision advanced manufacturing techniques

Low thermal budget high-k/metal surface gate for buried donor-based devices

Low-Resistance, High-Yield Electrical Contacts to Atom Scale Si:P Devices Using Palladium Silicide

Dry graphene transfer print to polystyrene and ultra-high molecular weight polyethylene − Detailed chemical, structural, morphological and electrical characterization

Modeling Assisted Room Temperature Operation of Atomic Precision Advanced Manufacturing Devices

Modeling and Assessment of Atomic Precision Advanced Manufacturing (APAM) Enabled Vertical Tunneling Field Effect Transistor

Quantum Transport in Si:P δ-Layer Wires

Electron-electron interactions in low-dimensional Si:P delta layers

A Model for Atomic Precision p-Type Doping with Diborane on Si(100)-2×1

A Model for Atomic Precision p-Type Doping with Diborane on Si(100)-2×1

Vacuum ultraviolet radiation effects on two-dimensional MoS2 field-effect transistors

Suppression of Midinfrared Plasma Resonance Due to Quantum Confinement in δ -Doped Silicon

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