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The fundamental downscaling limit of field effect transistors

Applied physics letters, 2015-05, Vol.106 (19)

2015

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Revealing quantum effects in highly conductive δ-layer systems

Communications physics, 2021-09, Vol.4 (1), p.1-7, Article 205

2021

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Quantum Transport Simulation of Experimentally Fabricated Nano-FinFET

IEEE transactions on electron devices, 2007-04, Vol.54 (4), p.784-796

2007

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Approaching Optimal Characteristics of 10-nm High-Performance Devices: A Quantum Transport Simulation Study of Si FinFET

IEEE transactions on electron devices, 2008-03, Vol.55 (3), p.743-753

2008

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Conductivity and size quantization effects in semiconductor $$\delta$$-layer systems

Scientific reports, 2022-09, Vol.12 (1), Article 16397

2022

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Uncovering anisotropic effects of electric high-moment dipoles on the tunneling current in \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\delta$$\end{document}δ-layer tunnel junctions

Scientific reports, 2023-12, Vol.13

2023

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Uncovering anisotropic effects of electric high-moment dipoles on the tunneling current in [Formula: see text]-layer tunnel junctions

Scientific reports, 2023-12, Vol.13 (1), p.22591-22591

2023

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Uncovering anisotropic effects of electric high-moment dipoles on the tunneling current in $$\delta$$ δ -layer tunnel junctions

Scientific reports, 2023-12, Vol.13 (1), p.1-11

2023

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Uncovering anisotropic effects of electric high-moment dipoles on the tunneling current in $$\delta$$-layer tunnel junctions

Scientific reports, 2023-12, Vol.13 (1), p.22591, Article 22591

2023

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The fundamental downscaling limit of field effect transistors

Applied physics letters, 2015-05, Vol.106 (19)

2015

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Influence of imperfections on tunneling rate in δ -layer junctions

Physical review applied, 2023-11, Vol.20 (5), Article 054021

2023

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Conductivity and size quantization effects in semiconductor [Formula: see text]-layer systems

Scientific reports, 2022-09, Vol.12 (1), p.16397-16397

2022

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Conductivity and size quantization effects in semiconductor \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\delta$$\end{document}δ-layer systems

Scientific reports, 2022-09, Vol.12

2022

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Conductivity and size quantization effects in semiconductor $$\delta$$ δ -layer systems

Scientific reports, 2022-09, Vol.12 (1), p.1-16

2022

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Quantum Transport Simulations for Si:P δ-layer Tunnel Junctions

2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2021, p.210-214

2021

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Power signatures and vacancy profile control in nanoscale memristive filaments

Applied physics letters, 2015-07, Vol.107 (3)

2015

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Power signatures of electric field and thermal switching regimes in memristive SET transitions

Journal of physics. D, Applied physics, 2016-05, Vol.49 (24), p.245103-245106

2016

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Modeling Assisted Room Temperature Operation of Atomic Precision Advanced Manufacturing Devices

2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2020, p.277-280

2020

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Quantum Transport in Si:P δ-Layer Wires

2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2020, p.181-184

2020

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Simulation of the Impact of Process Variation on the Optimized 10-nm FinFET

IEEE transactions on electron devices, 2008-08, Vol.55 (8), p.2134-2141

2008

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Impossibility of a pure resistance measurement: The charge-pileup model

Physical review. B, Condensed matter and materials physics, 2010-09, Vol.82 (11), Article 115333

2010

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Contact block reduction method and its application to a 10 nm MOSFET device

Semiconductor science and technology, 2004-04, Vol.19 (4), p.S118-S121

2004

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Electron Density Calculation Using the Contact Block Reduction Method

Journal of computational electronics, 2004-01, Vol.3 (1), p.45-50

2004

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The fundamental downscaling limit of field effect transistors

Revealing quantum effects in highly conductive δ-layer systems

Quantum Transport Simulation of Experimentally Fabricated Nano-FinFET

Approaching Optimal Characteristics of 10-nm High-Performance Devices: A Quantum Transport Simulation Study of Si FinFET

Conductivity and size quantization effects in semiconductor $$\delta$$-layer systems

Uncovering anisotropic effects of electric high-moment dipoles on the tunneling current in [Formula: see text]-layer tunnel junctions

Uncovering anisotropic effects of electric high-moment dipoles on the tunneling current in $$\delta$$ δ -layer tunnel junctions

Uncovering anisotropic effects of electric high-moment dipoles on the tunneling current in $$\delta$$-layer tunnel junctions

The fundamental downscaling limit of field effect transistors

Influence of imperfections on tunneling rate in δ -layer junctions

Conductivity and size quantization effects in semiconductor [Formula: see text]-layer systems

Conductivity and size quantization effects in semiconductor $$\delta$$ δ -layer systems

Quantum Transport Simulations for Si:P δ-layer Tunnel Junctions

Power signatures and vacancy profile control in nanoscale memristive filaments

Power signatures of electric field and thermal switching regimes in memristive SET transitions

Modeling Assisted Room Temperature Operation of Atomic Precision Advanced Manufacturing Devices

Quantum Transport in Si:P δ-Layer Wires

Simulation of the Impact of Process Variation on the Optimized 10-nm FinFET

Impossibility of a pure resistance measurement: The charge-pileup model

Contact block reduction method and its application to a 10 nm MOSFET device

Electron Density Calculation Using the Contact Block Reduction Method

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