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Polarization-resolved micro-photoluminescence investigation of InGaN/GaN core-shell microrods

Journal of applied physics, 2017-01, Vol.121 (2)

2017

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Toward three-dimensional hybrid inorganic/organic optoelectronics based on GaN/oCVD-PEDOT structures

Nature communications, 2020-10, Vol.11 (1), p.5092-5092, Article 5092

2020

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Optical properties and internal quantum efficiency of InGaN/GaN core-shell microrods for solid state lighting

Journal of applied physics, 2016-10, Vol.120 (15)

2016

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Phosphor-converted white light from blue-emitting InGaN microrod LEDs

Physica status solidi. A, Applications and materials science, 2016-06, Vol.213 (6), p.1577-1584

2016

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Group III nitride core-shell nano- and microrods for optoelectronic applications

Physica status solidi. PSS-RRL. Rapid research letters, 2013-10, Vol.7 (10), p.800-814

2013

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Demonstration of (In, Ga)N/GaN Core–Shell Micro Light-Emitting Diodes Grown by Molecular Beam Epitaxy on Ordered MOVPE GaN Pillars

Crystal growth & design, 2015-08, Vol.15 (8), p.3661-3665

2015

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Growth mechanisms of GaN microrods for 3D core-shell LEDs: The influence of silane flow

Physica status solidi. A, Applications and materials science, 2015-12, Vol.212 (12), p.2830-2836

2015

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Epitaxie und prozessierung von galliumnitrid-mikrosäulen-leds

Schimpke, Tilman

2018

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GaN nanowire arrays with nonpolar sidewalls for vertically integrated field-effect transistors

Nanotechnology, 2017-03, Vol.28 (9), p.095206-095206

2017

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Nanoscopic Insights into InGaN/GaN Core–Shell Nanorods: Structure, Composition, and Luminescence

Nano letters, 2016-09, Vol.16 (9), p.5340-5346

2016

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The influence of MOVPE growth conditions on the shell of core-shell GaN microrod structures

Journal of crystal growth, 2017-05, Vol.465, p.34-42

2017

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High Aspect Ratio GaN Fin Microstructures with Nonpolar Sidewalls by Continuous Mode Metalorganic Vapor Phase Epitaxy

Crystal growth & design, 2016-03, Vol.16 (3), p.1458-1462

2016

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Study of 3D-growth conditions for selective area MOVPE of high aspect ratio GaN fins with non-polar vertical sidewalls

Journal of crystal growth, 2017-10, Vol.476, p.90-98

2017

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Recombination dynamics in planar and three-dimensional InGaN/GaN light emitting diode structures

Journal of materials research, 2017-07, Vol.32 (13), p.2456-2463

2017

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Red-Emitting ( \(\lambda = 610\) nm) In sub(0.51)Ga sub(0.49)N/GaN Disk-in-Nanowire Light Emitting Diodes on Silicon

IEEE journal of quantum electronics, 2014-07, Vol.50 (7), p.530-537

2014

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Red-Emitting ( \(\lambda = 610\) nm) In0.51Ga0.49N/GaN Disk-in-Nanowire Light Emitting Diodes on Silicon

IEEE journal of quantum electronics, 2014-07, Vol.50 (7), p.530-537

2014

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Impact of inhomogeneous broadening on optical polarization of high-inclination semipolar and nonpolar InxGa1-xN/GaN quantum wells

Physical review. B, 2016-06, Vol.93 (23)

2016

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Growth and characterization of mixed polar GaN columns and core-shell LEDs

Physica status solidi. A, Applications and materials science, 2015-04, Vol.212 (4), p.727-731

2015

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Quantitative STEM: Comparative Studies of Composition and Optical Properties of Semiconductor Quantum Structures

Microscopy and microanalysis, 2017-07, Vol.23 (S1), p.1690-1691

2017

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Impact of inhomogeneous broadening on optical polarization of high-inclination semipolar and nonpolar In x Ga 1 − x N / GaN quantum wells

Physical review. B, 2016-06, Vol.93 (23), Article 235314

2016

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Polarization-resolved micro-photoluminescence investigation of InGaN/GaN core-shell microrods

Toward three-dimensional hybrid inorganic/organic optoelectronics based on GaN/oCVD-PEDOT structures

Optical properties and internal quantum efficiency of InGaN/GaN core-shell microrods for solid state lighting

Phosphor-converted white light from blue-emitting InGaN microrod LEDs

Group III nitride core-shell nano- and microrods for optoelectronic applications

Demonstration of (In, Ga)N/GaN Core–Shell Micro Light-Emitting Diodes Grown by Molecular Beam Epitaxy on Ordered MOVPE GaN Pillars

Growth mechanisms of GaN microrods for 3D core-shell LEDs: The influence of silane flow

Epitaxie und prozessierung von galliumnitrid-mikrosäulen-leds

GaN nanowire arrays with nonpolar sidewalls for vertically integrated field-effect transistors

Nanoscopic Insights into InGaN/GaN Core–Shell Nanorods: Structure, Composition, and Luminescence

The influence of MOVPE growth conditions on the shell of core-shell GaN microrod structures

High Aspect Ratio GaN Fin Microstructures with Nonpolar Sidewalls by Continuous Mode Metalorganic Vapor Phase Epitaxy

Study of 3D-growth conditions for selective area MOVPE of high aspect ratio GaN fins with non-polar vertical sidewalls

Recombination dynamics in planar and three-dimensional InGaN/GaN light emitting diode structures

Red-Emitting ( \(\lambda = 610\) nm) In sub(0.51)Ga sub(0.49)N/GaN Disk-in-Nanowire Light Emitting Diodes on Silicon

Red-Emitting ( \(\lambda = 610\) nm) In0.51Ga0.49N/GaN Disk-in-Nanowire Light Emitting Diodes on Silicon

Impact of inhomogeneous broadening on optical polarization of high-inclination semipolar and nonpolar InxGa1-xN/GaN quantum wells

Growth and characterization of mixed polar GaN columns and core-shell LEDs

Quantitative STEM: Comparative Studies of Composition and Optical Properties of Semiconductor Quantum Structures

Impact of inhomogeneous broadening on optical polarization of high-inclination semipolar and nonpolar In x Ga 1 − x N / GaN quantum wells

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