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Intrinsic electron accumulation at clean InN surfaces

Physical review letters, 2004-01, Vol.92 (3), p.036804-036804, Article 036804

2004

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Growth, fabrication, and characterization of InGaN solar cells

Physica status solidi. A, Applications and materials science, 2008-05, Vol.205 (5), p.1103-1105

2008

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Evidence for p-type doping of InN

Physical review letters, 2006-03, Vol.96 (12), p.125505-125505, Article 125505

2006

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The effect of interface-roughness and dislocation scattering on low temperature mobility of 2D electron gas in GaN/AlGaN

Semiconductor science and technology, 2004-03, Vol.19 (3), p.427-432

2004

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Growth and characterization of rugged sodium potassium antimonide photocathodes for high brilliance photoinjector

Applied physics letters, 2013-09, Vol.103 (10)

2013

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Detailed analysis of the dielectric function for wurtzite InN and In-rich InAlN alloys

Physica status solidi. A, Applications and materials science, 2006-01, Vol.203 (1), p.42-49

2006

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Direct Determination of Local Lattice Polarity in Crystals

Science (American Association for the Advancement of Science), 2006-06, Vol.312 (5778), p.1354-1354

2006

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Origin of electron accumulation at wurtzite InN surfaces

Physical review. B, Condensed matter and materials physics, 2004-05, Vol.69 (20), p.201307.1-201307.4, Article 201307

2004

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Undoped AlGaN/GaN HEMTs for microwave power amplification

IEEE transactions on electron devices, 2001-03, Vol.48 (3), p.479-485

2001

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Mg-doped InN and InGaN - Photoluminescence, capacitance-voltage and thermopower measurements

Physica Status Solidi (b), 2008-05, Vol.245 (5), p.873-877

2008

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Assessing structural, free-charge carrier, and phonon properties of mixed-phase epitaxial films: The case of InN

Physical review. B, Condensed matter and materials physics, 2014-11, Vol.90 (19), p.195306, Article 195306

2014

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Hydrogen in InN: A ubiquitous phenomenon in molecular beam epitaxy grown material

Applied physics letters, 2010-02, Vol.96 (8), p.081907-081907-3

2010

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Optical phonon sidebands of electronic intersubband absorption in strongly polar semiconductor heterostructures

Physical review letters, 2005-01, Vol.94 (3), p.037403.1-037403.4, Article 037403

2005

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Hot-phonon-induced velocity saturation in GaN

Journal of applied physics, 2004-08, Vol.96 (3), p.1499-1502

2004

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Hot electron cooling rates via the emission of LO-phonons in InN

Semiconductor science and technology, 2004-08, Vol.19 (8), p.1024-1028

2004

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Free electron behavior in InN: On the role of dislocations and surface electron accumulation

Applied physics letters, 2009-01, Vol.94 (2), p.022109-022109-3

2009

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Donor and acceptor concentrations in degenerate InN

Applied physics letters, 2002-01, Vol.80 (2), p.258-260

2002

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Pressure studies of multicarrier conduction in undoped InN grown on GaN buffer

Physica Status Solidi. B: Basic Solid State Physics, 2013-04, Vol.250 (4), p.746-749

2013

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Phonon lifetimes and phonon decay in InN

Applied physics letters, 2005-05, Vol.86 (22), p.223501-223501-3

2005

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Ferromagnetism and spin polarization in indium nitride, indium oxynitride, and Cr substituted indium oxynitride films

Applied surface science, 2014-03, Vol.295, p.189-193

2014

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n-type doping of wurtzite GaN with germanium grown with plasma-assisted molecular beam epitaxy

Journal of crystal growth, 2004-06, Vol.267 (1), p.123-128

2004

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Critical points of the band structure and valence band ordering at the Γ point of wurtzite InN

Journal of crystal growth, 2006-03, Vol.288 (2), p.273-277

2006

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The influence of conduction band plasmons on core-level photoemission spectra of InN

Surface science, 2008-02, Vol.602 (4), p.871-875

2008

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Electron accumulation at nonpolar and semipolar surfaces of wurtzite InN from generalized infrared ellipsometry

Applied physics letters, 2009-11, Vol.95 (20), p.202103-202103-3

2009

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Origin of the n-type conductivity of InN: The role of positively charged dislocations

Applied physics letters, 2006-06, Vol.88 (25)

2006

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Intrinsic electron accumulation at clean InN surfaces

Growth, fabrication, and characterization of InGaN solar cells

Evidence for p-type doping of InN

The effect of interface-roughness and dislocation scattering on low temperature mobility of 2D electron gas in GaN/AlGaN

Growth and characterization of rugged sodium potassium antimonide photocathodes for high brilliance photoinjector

Detailed analysis of the dielectric function for wurtzite InN and In-rich InAlN alloys

Direct Determination of Local Lattice Polarity in Crystals

Origin of electron accumulation at wurtzite InN surfaces

Undoped AlGaN/GaN HEMTs for microwave power amplification

Mg-doped InN and InGaN - Photoluminescence, capacitance-voltage and thermopower measurements

Assessing structural, free-charge carrier, and phonon properties of mixed-phase epitaxial films: The case of InN

Hydrogen in InN: A ubiquitous phenomenon in molecular beam epitaxy grown material

Optical phonon sidebands of electronic intersubband absorption in strongly polar semiconductor heterostructures

Hot-phonon-induced velocity saturation in GaN

Hot electron cooling rates via the emission of LO-phonons in InN

Free electron behavior in InN: On the role of dislocations and surface electron accumulation

Donor and acceptor concentrations in degenerate InN

Pressure studies of multicarrier conduction in undoped InN grown on GaN buffer

Phonon lifetimes and phonon decay in InN

Ferromagnetism and spin polarization in indium nitride, indium oxynitride, and Cr substituted indium oxynitride films

n-type doping of wurtzite GaN with germanium grown with plasma-assisted molecular beam epitaxy

Critical points of the band structure and valence band ordering at the Γ point of wurtzite InN

The influence of conduction band plasmons on core-level photoemission spectra of InN

Electron accumulation at nonpolar and semipolar surfaces of wurtzite InN from generalized infrared ellipsometry

Origin of the n-type conductivity of InN: The role of positively charged dislocations

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