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Suppression of compensating native defect formation during semiconductor processing via excess carriers

Scientific reports, 2016-06, Vol.6 (1), p.27954-27954, Article 27954

2016

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Diluted II-VI oxide semiconductors with multiple band gaps

Physical review letters, 2003-12, Vol.91 (24), p.246403-246403, Article 246403

2003

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Overcoming the doping limit in GaAs by ion implantation and pulsed laser melting

Journal of applied physics, 2024-01, Vol.135 (4)

2024

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Temperature dependent conductivity of polycrystalline Cu2ZnSnS4 thin films

Applied physics letters, 2012-06, Vol.100 (26)

2012

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Effects of pulsed laser annealing on deep level defects in electrochemically-deposited and furnace annealed CuInSe2 thin films

Thin solid films, 2013-03, Vol.531, p.566-571

2013

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Grain Size and Texture of Cu2ZnSnS4 Thin Films Synthesized by Cosputtering Binary Sulfides and Annealing: Effects of Processing Conditions and Sodium

Journal of electronic materials, 2011-11, Vol.40 (11), p.2214-2221

2011

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Model of native point defect equilibrium in Cu2ZnSnS4 and application to one-zone annealing

Journal of applied physics, 2013-09, Vol.114 (12)

2013

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Ferromagnetic Ga1−xMnxAs produced by ion implantation and pulsed-laser melting

Applied physics letters, 2003-02, Vol.82 (8), p.1251-1253

2003

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Investigation of combinatorial coevaporated thin film Cu2ZnSnS4 (II): Beneficial cation arrangement in Cu-rich growth

Journal of applied physics, 2014-05, Vol.115 (17)

2014

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Mutual passivation of electrically active and isovalent impurities

Nature materials, 2002-11, Vol.1 (3), p.185-189

2002

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Doping and defect control of ferromagnetic semiconductors formed by ion implantation and pulsed-laser melting

Physica. B, Condensed matter, 2006-04, Vol.376, p.630-634

2006

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GdN (1 1 1) heteroepitaxy on GaN (0 0 0 1) by N2 plasma and NH3 molecular beam epitaxy

Journal of crystal growth, 2009-02, Vol.311 (5), p.1239-1244

2009

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Impact of high-dose gamma-ray irradiation on electrical characteristics of N-polar and Ga-polar GaN p–n diodes

AIP advances, 2021-02, Vol.11 (2), p.025009-025009-8

2021

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Diluted ZnMnTe oxide: a multi-band semiconductor for high efficiency solar cells

Physica Status Solidi (b), 2004-03, Vol.241 (3), p.660-663

2004

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Synthesis of GaNxAs1−x thin films by pulsed laser melting and rapid thermal annealing of N+-implanted GaAs

Journal of applied physics, 2003-07, Vol.94 (2), p.1043-1049

2003

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Ferromagnetism in Ga1-xMnxP : Evidence for inter-Mn exchange mediated by localized holes within a detached impurity band

Physical review letters, 2005-11, Vol.95 (20), p.207204.1-207204.4

2005

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Effect of film thickness on the incorporation of Mn interstitials in Ga1−xMnxAs

Applied physics letters, 2005-01, Vol.86 (4), p.42102

2005

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Synthesis and optical properties of II-O-VI highly mismatched alloys

Journal of applied physics, 2004-06, Vol.95 (11), p.6232-6238

2004

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Continuous wave solid phase laser annealing of single-pot electrodeposited CuInSe2 thin films: Effects of Cu/In stoichiometry

Journal of applied physics, 2013-07, Vol.114 (4)

2013

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Diluted magnetic semiconductors formed by ion implantation and pulsed-laser melting

Physica. B, Condensed matter, 2003-12, Vol.340-342, p.908-912

2003

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CuInSe2 semiconductor formation by laser annealing

Thin solid films, 2015-05, Vol.582, p.23-26

2015

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Electrical transport and ferromagnetism in Ga1−xMnxAs synthesized by ion implantation and pulsed-laser melting

Journal of applied physics, 2008-04, Vol.103 (7)

2008

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Ferromagnetism in Ga(1-x)Mn(x)P: evidence for inter-Mn exchange mediated by localized holes within a detached impurity band

Physical review letters, 2005-11, Vol.95 (20), p.207204-207204

2005

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Laser annealing of electrodeposited CuInSe2 semiconductor precursors: experiment and modeling

Journal of materials chemistry. C, Materials for optical and electronic devices, 2017-02, Vol.5 (6), p.1336-1345

2017

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Mutual passivation of group IV donors and isovalent nitrogen in diluted GaNxAs1−x alloys

Physica. B, Condensed matter, 2003-12, Vol.340-342, p.389-393

2003

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Suppression of compensating native defect formation during semiconductor processing via excess carriers

Diluted II-VI oxide semiconductors with multiple band gaps

Overcoming the doping limit in GaAs by ion implantation and pulsed laser melting

Temperature dependent conductivity of polycrystalline Cu2ZnSnS4 thin films

Effects of pulsed laser annealing on deep level defects in electrochemically-deposited and furnace annealed CuInSe2 thin films

Grain Size and Texture of Cu2ZnSnS4 Thin Films Synthesized by Cosputtering Binary Sulfides and Annealing: Effects of Processing Conditions and Sodium

Model of native point defect equilibrium in Cu2ZnSnS4 and application to one-zone annealing

Ferromagnetic Ga1−xMnxAs produced by ion implantation and pulsed-laser melting

Investigation of combinatorial coevaporated thin film Cu2ZnSnS4 (II): Beneficial cation arrangement in Cu-rich growth

Mutual passivation of electrically active and isovalent impurities

Doping and defect control of ferromagnetic semiconductors formed by ion implantation and pulsed-laser melting

GdN (1 1 1) heteroepitaxy on GaN (0 0 0 1) by N2 plasma and NH3 molecular beam epitaxy

Impact of high-dose gamma-ray irradiation on electrical characteristics of N-polar and Ga-polar GaN p–n diodes

Diluted ZnMnTe oxide: a multi-band semiconductor for high efficiency solar cells

Synthesis of GaNxAs1−x thin films by pulsed laser melting and rapid thermal annealing of N+-implanted GaAs

Ferromagnetism in Ga1-xMnxP : Evidence for inter-Mn exchange mediated by localized holes within a detached impurity band

Effect of film thickness on the incorporation of Mn interstitials in Ga1−xMnxAs

Synthesis and optical properties of II-O-VI highly mismatched alloys

Continuous wave solid phase laser annealing of single-pot electrodeposited CuInSe2 thin films: Effects of Cu/In stoichiometry

Diluted magnetic semiconductors formed by ion implantation and pulsed-laser melting

CuInSe2 semiconductor formation by laser annealing

Electrical transport and ferromagnetism in Ga1−xMnxAs synthesized by ion implantation and pulsed-laser melting

Ferromagnetism in Ga(1-x)Mn(x)P: evidence for inter-Mn exchange mediated by localized holes within a detached impurity band

Laser annealing of electrodeposited CuInSe2 semiconductor precursors: experiment and modeling

Mutual passivation of group IV donors and isovalent nitrogen in diluted GaNxAs1−x alloys

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