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Distribution of Mediastinal Lesions Across Multi-Institutional, International, Radiology Databases

Journal of thoracic oncology, 2020-04, Vol.15 (4), p.568-579

2020

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Pan-cancer Genomic Analysis of AXL Mutations Reveals a Novel, Recurrent, Functionally Activating AXL W451C Alteration Specific to Myxofibrosarcoma

The American journal of surgical pathology, 2024-06, Vol.48 (6), p.699-707

2024

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Relationship Between Basal Plane Dislocation Distribution and Local Basal Plane Bending in PVT-Grown 4H-SiC Crystals

Journal of electronic materials, 2020-06, Vol.49 (6), p.3455-3464

2020

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Analyzing Current Trends and Possible Strategies to Improve Sucrose Isomerases’ Thermostability

International journal of molecular sciences, 2023-10, Vol.24 (19), p.14513

2023

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Synchrotron X-Ray Topography Study on the Relationship between Local Basal Plane Bending and Basal Plane Dislocations in PVT-Grown 4H-SiC Substrate Wafers

Materials science forum, 2020-07, Vol.1004, p.393-400

2020

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2111 SUB-FASCIAL CONTINUOUS LOCAL ANESTHESIA DRAMATICALLY REDUCES NARCOTIC MEDICATION REQUIREMENTS FOLLOWING LAPARO-ENDOSCOPIC SINGLE SITE DONOR NEPHRECTOMY

The Journal of urology, 2013-04, Vol.189 (4), p.e865-e865

2013

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Comparison of laparoendoscopic single site (LESS) and conventional laparoscopic donor nephrectomy at a single institution

BJU international, 2013-07, Vol.112 (2), p.198-206

2013

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Prismatic Slip in PVT-Grown 4H-SiC Crystals

Journal of electronic materials, 2017-04, Vol.46 (4), p.2040-2044

2017

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Cardiac CT and Transesophageal Echocardiogram Evaluation of a Sinus Venosus-Type Atrial Septal Defect With Partial Anomalous Pulmonary Venous Return and a Persistent Left Superior Vena Cava

Curēus (Palo Alto, CA), 2021-12

2021

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Physical Activity and Experience of Total Knee Replacement in Patients One to Four Years Postsurgery in the Dominican Republic: A Qualitative Study

Arthritis care & research (2010), 2015-01, Vol.67 (1), p.65-73

2015

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Experimental verification of the model for formation of double Shockley stacking faults in highly doped regions of PVT-grown 4H–SiC wafers

Journal of crystal growth, 2016-10, Vol.452, p.35-38

2016

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Study of V and Y Shape Frank-Type Stacking Faults Formation in 4H-SiC Epilayer

Materials science forum, 2014-02, Vol.778-780, p.332-337

2014

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Measurement of Critical Thickness for the Formation of Interfacial Dislocations and Half Loop Arrays in 4H-SiC Epilayer via X-Ray Topography

Materials science forum, 2014-02, Vol.778-780, p.328-331

2014

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High Quality 150 mm 4H SiC Wafers for Power Device Production

Materials science forum, 2015-06, Vol.821-823, p.56-59, Article 56

2015

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Lactoferrin: A Glycoprotein Involved in Immunomodulation, Anticancer, and Antimicrobial Processes

Molecules (Basel, Switzerland), 2021-01, Vol.26 (1), p.205

2021

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The Nucleation and Propagation of Threading Dislocations with C-Component of Burgers Vector in PVT-Grown 4H-SiC

Materials science forum, 2013-01, Vol.740-742, p.217-220

2013

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Stacking Fault Formation via 2D Nucleation in PVT Grown 4H-SiC

Materials science forum, 2015-06, Vol.821-823, p.85-89, Article 85

2015

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Lactoferrin as a nutraceutical protein from milk, an overview

International dairy journal, 2019-02, Vol.89, p.37-41

2019

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Characterization of V-shaped Defects in 4H-SiC Homoepitaxial Layers

Journal of electronic materials, 2015-05, Vol.44 (5), p.1293-1299

2015

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Recombinant human lactoferrin induces apoptosis, disruption of F-actin structure and cell cycle arrest with selective cytotoxicity on human triple negative breast cancer cells

Apoptosis (London), 2019-08, Vol.24 (7-8), p.562-577

2019

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Enhanced Parallel bzip2 Compression with Lock-Free Queue

Uniciencia, 2017-07, Vol.31 (2), p.37-49

2017

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A method to determine fault vectors in 4H-SiC from stacking sequences observed on high resolution transmission electron microscopy images

Journal of applied physics, 2014-09, Vol.116 (10)

2014

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Synchrotron X-Ray Topography Analysis of Double Shockley Stacking Faults in 4H-SiC Wafers

Materials Science Forum, 2016-05, Vol.858 (5, 2016), p.105-108, Article 105

2016

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Erratum: “A method to determine fault vectors in 4H-SiC from stacking sequences observed on high resolution transmission electron microscopy images” [J. Appl. Phys. 116 , 104905 (2014)]

Journal of applied physics, 2014-10, Vol.116 (16)

2014

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The Effect of 4H-SiC Substrate Surface Scratches on Chemical Vapor Deposition Grown Homo-Epitaxial Layer Quality

Materials science forum, 2009-03, Vol.615-617, p.109-112, Article 109

2009

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Distribution of Mediastinal Lesions Across Multi-Institutional, International, Radiology Databases

Pan-cancer Genomic Analysis of AXL Mutations Reveals a Novel, Recurrent, Functionally Activating AXL W451C Alteration Specific to Myxofibrosarcoma

Relationship Between Basal Plane Dislocation Distribution and Local Basal Plane Bending in PVT-Grown 4H-SiC Crystals

Analyzing Current Trends and Possible Strategies to Improve Sucrose Isomerases’ Thermostability

Synchrotron X-Ray Topography Study on the Relationship between Local Basal Plane Bending and Basal Plane Dislocations in PVT-Grown 4H-SiC Substrate Wafers

2111 SUB-FASCIAL CONTINUOUS LOCAL ANESTHESIA DRAMATICALLY REDUCES NARCOTIC MEDICATION REQUIREMENTS FOLLOWING LAPARO-ENDOSCOPIC SINGLE SITE DONOR NEPHRECTOMY

Comparison of laparoendoscopic single site (LESS) and conventional laparoscopic donor nephrectomy at a single institution

Prismatic Slip in PVT-Grown 4H-SiC Crystals

Cardiac CT and Transesophageal Echocardiogram Evaluation of a Sinus Venosus-Type Atrial Septal Defect With Partial Anomalous Pulmonary Venous Return and a Persistent Left Superior Vena Cava

Physical Activity and Experience of Total Knee Replacement in Patients One to Four Years Postsurgery in the Dominican Republic: A Qualitative Study

Experimental verification of the model for formation of double Shockley stacking faults in highly doped regions of PVT-grown 4H–SiC wafers

Study of V and Y Shape Frank-Type Stacking Faults Formation in 4H-SiC Epilayer

Measurement of Critical Thickness for the Formation of Interfacial Dislocations and Half Loop Arrays in 4H-SiC Epilayer via X-Ray Topography

High Quality 150 mm 4H SiC Wafers for Power Device Production

Lactoferrin: A Glycoprotein Involved in Immunomodulation, Anticancer, and Antimicrobial Processes

The Nucleation and Propagation of Threading Dislocations with C-Component of Burgers Vector in PVT-Grown 4H-SiC

Stacking Fault Formation via 2D Nucleation in PVT Grown 4H-SiC

Lactoferrin as a nutraceutical protein from milk, an overview

Characterization of V-shaped Defects in 4H-SiC Homoepitaxial Layers

Recombinant human lactoferrin induces apoptosis, disruption of F-actin structure and cell cycle arrest with selective cytotoxicity on human triple negative breast cancer cells

Enhanced Parallel bzip2 Compression with Lock-Free Queue

A method to determine fault vectors in 4H-SiC from stacking sequences observed on high resolution transmission electron microscopy images

Synchrotron X-Ray Topography Analysis of Double Shockley Stacking Faults in 4H-SiC Wafers

Erratum: “A method to determine fault vectors in 4H-SiC from stacking sequences observed on high resolution transmission electron microscopy images” [J. Appl. Phys. 116 , 104905 (2014)]

The Effect of 4H-SiC Substrate Surface Scratches on Chemical Vapor Deposition Grown Homo-Epitaxial Layer Quality

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