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Advanced Residual Stress Analysis and FEM Simulation on Heteroepitaxial 3C-SiC for MEMS Application

Journal of microelectromechanical systems, 2011-06, Vol.20 (3), p.745-752

2011

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Structural defects in (100) 3C-SiC heteroepitaxy: Influence of the buffer layer morphology on generation and propagation of stacking faults and microtwins

Diamond and related materials, 2009-12, Vol.18 (12), p.1440-1449

2009

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High growth rates (>30 μm/h) of 4H–SiC epitaxial layers using a horizontal hot-wall CVD reactor

Journal of crystal growth, 2005-12, Vol.285 (4), p.486-490

2005

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Heteroepitaxy of 3C-SiC on different on-axis oriented silicon substrates

Journal of applied physics, 2009-04, Vol.105 (8)

2009

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Atomic force microscopy analysis of central nervous system cell morphology on silicon carbide and diamond substrates

Journal of molecular recognition, 2009-09, Vol.22 (5), p.380-388

2009

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Growth of cubic silicon carbide on oxide using polysilicon as a seed layer for micro-electro-mechanical machine applications

Journal of crystal growth, 2009-08, Vol.311 (17), p.4179-4182

2009

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Silicon Carbide Technology for Advanced Human Healthcare Applications

Saddow, Stephen E

1, 2022

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4H–SiC photoconductive switching devices for use in high-power applications

Applied physics letters, 2003-05, Vol.82 (18), p.3107-3109

2003

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Assessment of cell proliferation on 6H–SiC biofunctionalized with self-assembled monolayers

Journal of materials research, 2013-01, Vol.28 (1), p.78-86

2013

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Silane overpressure post-implant annealing of Al dopants in SiC: Cold wall CVD apparatus

Applied surface science, 2006-03, Vol.252 (10), p.3837-3842

2006

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A cytotoxicity study of silicon oxycarbide nanowires as cell scaffold for biomedical applications

Materials Science & Engineering C, 2017-04, Vol.73, p.465-471

2017

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Growth Rate Effect on 3C-SiC Film Residual Stress on (100) Si Substrates

Materials science forum, 2010-01, Vol.645-648, p.143-146

2010

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Oxide of non-basal quasi-polar 6H-SiC surfaces

Journal of physics. D, Applied physics, 2006-07, Vol.39 (13), p.2692-2695

2006

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3C-SiC Films on Si for MEMS Applications: Mechanical Properties

Materials science forum, 2009-03, Vol.615-617, p.633-636

2009

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3C-SiC on Si Hetero-Epitaxial Growth for Electronic and Biomedical Applications

ECS transactions, 2013-08, Vol.58 (4), p.119-126

2013

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3C-SiC on Si: A Versatile Material for Electronic, Biomedical and Clean Energy Applications

MRS proceedings, 2014, Vol.1693 (1), p.61-74, Article mrss14-1693-dd05-01

2014

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Surface studies of hydrogen etched 3C-SiC(001) on Si(001)

Applied physics letters, 2007-08, Vol.91 (6), p.061914

2007

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Effects of substrate surface preparation on chemical vapor deposition growth of 4H-SiC epitaxial layers

Journal of electronic materials, 2001-03, Vol.30 (3), p.228-234

2001

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Thermally stimulated luminescence in full-size 4H-SiC wafers

Journal of physics. Condensed matter, 2002-12, Vol.14 (48), p.13381-13386

2002

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Development of a high-growth rate 3C-SiC on Si CVD process

MRS proceedings, 2006, Vol.911, Article 0911-B08-01

2006

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Electrical characteristics of a 6H-SiC epitaxial layer grown by chemical vapor deposition on porous SiC substrate

Journal of electronic materials, 2004-05, Vol.33 (5), p.456-459

2004

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Increased Growth Rates of 3C-SiC on Si (100) Substrates via HCl Growth Additive

Materials science forum, 2007-01, Vol.556-557, p.191-194

2007

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Effective carrier density in porous silicon carbide

Semiconductor science and technology, 2004-03, Vol.19 (3), p.319-322

2004

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Residual Stress Measurement and Simulation of 3C-SiC Single and Poly Crystal Cantilevers

Materials science forum, 2010-01, Vol.645-648, p.865-868

2010

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The Development of Monolithic Silicon Carbide Intracortical Neural Interfaces for Long-Term Human Implantation

Materials science forum, 2022-05, Vol.1062, p.195-203

2022

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Advanced Residual Stress Analysis and FEM Simulation on Heteroepitaxial 3C-SiC for MEMS Application

Structural defects in (100) 3C-SiC heteroepitaxy: Influence of the buffer layer morphology on generation and propagation of stacking faults and microtwins

High growth rates (>30 μm/h) of 4H–SiC epitaxial layers using a horizontal hot-wall CVD reactor

Heteroepitaxy of 3C-SiC on different on-axis oriented silicon substrates

Atomic force microscopy analysis of central nervous system cell morphology on silicon carbide and diamond substrates

Growth of cubic silicon carbide on oxide using polysilicon as a seed layer for micro-electro-mechanical machine applications

Silicon Carbide Technology for Advanced Human Healthcare Applications

4H–SiC photoconductive switching devices for use in high-power applications

Assessment of cell proliferation on 6H–SiC biofunctionalized with self-assembled monolayers

Silane overpressure post-implant annealing of Al dopants in SiC: Cold wall CVD apparatus

A cytotoxicity study of silicon oxycarbide nanowires as cell scaffold for biomedical applications

Growth Rate Effect on 3C-SiC Film Residual Stress on (100) Si Substrates

Oxide of non-basal quasi-polar 6H-SiC surfaces

3C-SiC Films on Si for MEMS Applications: Mechanical Properties

3C-SiC on Si Hetero-Epitaxial Growth for Electronic and Biomedical Applications

3C-SiC on Si: A Versatile Material for Electronic, Biomedical and Clean Energy Applications

Surface studies of hydrogen etched 3C-SiC(001) on Si(001)

Effects of substrate surface preparation on chemical vapor deposition growth of 4H-SiC epitaxial layers

Thermally stimulated luminescence in full-size 4H-SiC wafers

Development of a high-growth rate 3C-SiC on Si CVD process

Electrical characteristics of a 6H-SiC epitaxial layer grown by chemical vapor deposition on porous SiC substrate

Increased Growth Rates of 3C-SiC on Si (100) Substrates via HCl Growth Additive

Effective carrier density in porous silicon carbide

Residual Stress Measurement and Simulation of 3C-SiC Single and Poly Crystal Cantilevers

The Development of Monolithic Silicon Carbide Intracortical Neural Interfaces for Long-Term Human Implantation

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