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Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies

Journal of applied physics, 1994-08, Vol.76 (3), p.1363-1398

1994

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Time-resolved Raman studies of the decay of the longitudinal optical phonons in wurtzite GaN

Applied physics letters, 1998-04, Vol.72 (17), p.2132-2134

1998

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Formation of threading defects in GaN wurtzite films grown on nonisomorphic substrates

Applied physics letters, 1995-10, Vol.67 (14), p.2063-2065

1995

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Mechanisms of band-edge emission in Mg-doped p -type GaN

Applied physics letters, 1996-04, Vol.68 (14), p.1883-1885

1996

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High transconductance-normally-off GaN MODFETs

Electronics letters, 1995-08, Vol.31 (16), p.1389-1390

1995

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A comparative study of GaN epilayers grown on sapphire and SiC substrates by plasma-assisted molecular-beam epitaxy

Applied physics letters, 1993-06, Vol.62 (26), p.3479-3481

1993

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Direct measurements of electron-longitudinal optical phonon scattering rates in wurtzite GaN

Applied physics letters, 1997-09, Vol.71 (13), p.1852-1853

1997

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Characterization of structural defects in wurtzite GaN grown on 6H SiC using plasma-enhanced molecular beam epitaxy

Applied physics letters, 1995-09, Vol.67 (13), p.1830-1832

1995

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Nonequilibrium electron distributions and phonon dynamics in wurtzite GaN

Applied physics letters, 1996-05, Vol.68 (21), p.2990-2992

1996

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Thermal stability of GaN investigated by low-temperature photoluminescence spectroscopy

Applied physics letters, 1993-12, Vol.63 (26), p.3625-3627

1993

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Spectral measurements of dielectric characteristics of petroleum and petroleum oils in the millimeter wave range

Radiophysics and quantum electronics, 2007-06, Vol.50 (6), p.442-451

2007

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Growth and characterization of GaN on c-plane (0001) sapphire substrates by plasma-enhanced molecular beam epitaxy

Journal of applied physics, 1993-10, Vol.74 (8), p.5038-5041

1993

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Study of the dielectric properties of water in the frequency range 75–120 GHz

Radiophysics and quantum electronics, 2006-06, Vol.49 (6), p.442-452

2006

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Structural properties of GaN films grown on sapphire by molecular beam epitaxy

Applied physics letters, 1996-02, Vol.68 (8), p.1141-1143

1996

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Strained layer heterostructures, and their applications to MODFETs, HBTs, and lasers

Proceedings of the IEEE, 1993-04, Vol.81 (4), p.493-556

1993

Volltextzugriff (PDF)

GaN based III–V nitrides by molecular beam epitaxy

Journal of crystal growth, 1995-05, Vol.150 (1-4), p.887-891

1995

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Electron–phonon interactions in the wide band-gap semiconductor GaN

Applied physics letters, 1995-09, Vol.67 (12), p.1757-1759

1995

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Refractive indices of wurtzite and zincblende GaN

Electronics letters, 1993, Vol.29 (20), p.1759-1761

1993

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Dynamics of a band-edge transition in GaN grown by molecular beam epitaxy

Applied physics letters, 1995-06, Vol.66 (25), p.3474-3476

1995

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Reduction of dark current in photodiodes by the use of a resonant cavity

Electronics letters, 1993-05, Vol.29 (11), p.1019-1021

1993

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Photoluminescence studies of band-edge transitions in GaN epitaxial layers grown by plasma-assisted molecular beam epitaxy

Journal of applied physics, 1996-03, Vol.79 (5), p.2675-2683

1996

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InGaSbAs injection lasers

IEEE journal of quantum electronics, 1987-06, Vol.23 (6), p.1089-1094

1987

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Stacking mismatch boundaries in GaN: Implications for substrate selection

Solid-state electronics, 1997, Vol.41 (2), p.349-352

1997

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Results of comparative measurements of radiowave attenuation in snowfalls at frequencies 138 and 247 GHZ

Radiophysics and quantum electronics, 1999-02, Vol.42 (2), p.89-94

1999

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Resonant cavity enhanced InP/InGaAs photodiode on Si using epitaxial liftoff

Applied physics letters, 1994-10, Vol.65 (15), p.1880-1882, Article 1880

1994

Volltextzugriff (PDF)

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Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies

Time-resolved Raman studies of the decay of the longitudinal optical phonons in wurtzite GaN

Formation of threading defects in GaN wurtzite films grown on nonisomorphic substrates

Mechanisms of band-edge emission in Mg-doped p -type GaN

High transconductance-normally-off GaN MODFETs

A comparative study of GaN epilayers grown on sapphire and SiC substrates by plasma-assisted molecular-beam epitaxy

Direct measurements of electron-longitudinal optical phonon scattering rates in wurtzite GaN

Characterization of structural defects in wurtzite GaN grown on 6H SiC using plasma-enhanced molecular beam epitaxy

Nonequilibrium electron distributions and phonon dynamics in wurtzite GaN

Thermal stability of GaN investigated by low-temperature photoluminescence spectroscopy

Spectral measurements of dielectric characteristics of petroleum and petroleum oils in the millimeter wave range

Growth and characterization of GaN on c-plane (0001) sapphire substrates by plasma-enhanced molecular beam epitaxy

Study of the dielectric properties of water in the frequency range 75–120 GHz

Structural properties of GaN films grown on sapphire by molecular beam epitaxy

Strained layer heterostructures, and their applications to MODFETs, HBTs, and lasers

GaN based III–V nitrides by molecular beam epitaxy

Electron–phonon interactions in the wide band-gap semiconductor GaN

Refractive indices of wurtzite and zincblende GaN

Dynamics of a band-edge transition in GaN grown by molecular beam epitaxy

Reduction of dark current in photodiodes by the use of a resonant cavity

Photoluminescence studies of band-edge transitions in GaN epitaxial layers grown by plasma-assisted molecular beam epitaxy

InGaSbAs injection lasers

Stacking mismatch boundaries in GaN: Implications for substrate selection

Results of comparative measurements of radiowave attenuation in snowfalls at frequencies 138 and 247 GHZ

Resonant cavity enhanced InP/InGaAs photodiode on Si using epitaxial liftoff

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