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Terahertz oscillations in an In0.53Ga0.47As submicron planar Gunn diode

Journal of applied physics, 2014-03, Vol.115 (11)

2014

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Intraband relaxation via polaron decay in InAs self-assembled quantum dots

Physical review. B, Condensed matter and materials physics, 2004-10, Vol.70 (16), p.161305.1-161305.4, Article 161305

2004

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Dynamics of coherent and incoherent spin polarizations in ensembles of quantum dots

Physical review letters, 2004-07, Vol.93 (5), p.057401-057401, Article 057401

2004

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Long-wavelength light emission and lasing from InAs∕GaAs quantum dots covered by a GaAsSb strain-reducing layer

Applied physics letters, 2005-04, Vol.86 (14)

2005

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A comparison of partially burnt coal chars and the implications of their properties on the blast furnace process

Fuel processing technology, 2018-07, Vol.176, p.230-239

2018

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Electron dominated impact ionization and avalanche gain characteristics in InAs photodiodes

Applied physics letters, 2008-09, Vol.93 (11)

2008

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Manipulation of the homogeneous linewidth of an individual In(Ga)As quantum dot

Physical review. B, Condensed matter, 2002-07, Vol.66 (4), Article 045313

2002

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Suppression of InAs ∕ GaAs quantum dot decomposition by the incorporation of a GaAsSb capping layer

Applied physics letters, 2007-05, Vol.90 (21), p.213105-213105-3

2007

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An evaluation of chlorination for the removal of zinc from steelmaking dusts

Minerals engineering, 2011-08, Vol.24 (9), p.1028-1030

2011

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Photoluminescence decay time measurements from self-organized InAs/GaAs quantum dots

Journal of applied physics, 1999-09, Vol.86 (5), p.2555-2561

1999

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Far-infrared absorption studies of Be acceptors in δ-doped GaAs/AlAs multiple quantum wells

Science China. Physics, mechanics & astronomy, 2006-12, Vol.49 (6), p.702-708

2006

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Extremely Low Excess Noise in InAs Electron Avalanche Photodiodes

IEEE photonics technology letters, 2009-07, Vol.21 (13), p.866-868

2009

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Atomic scale study of the impact of the strain and composition of the capping layer on the formation of InAs quantum dots

Applied physics letters, 2007-04, Vol.101 (8), p.081707-081707-6

2007

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Measurements of optical losses in mid-infrared semiconductor lasers using Fabry–Pérot transmission oscillations

Journal of applied physics, 2004-06, Vol.95 (12), p.7584-7587

2004

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Room-temperature 1.6μm light emission from InAs∕GaAs quantum dots with a thin GaAsSb cap layer

Journal of applied physics, 2006-02, Vol.99 (4)

2006

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Optimizing the growth of 1.3 μm InAs/InGaAs dots-in-a-well structure

Journal of applied physics, 2003-03, Vol.93 (5), p.2931-2936

2003

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Room-temperature, ground-state lasing for red-emitting vertically aligned InAlAs/AlGaAs quantum dots grown on a GaAs(100) substrate

Applied physics letters, 2002-05, Vol.80 (20), p.3769-3771

2002

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Intervalley scattering in GaAs–AlAs quantum cascade lasers

Applied physics letters, 2002-08, Vol.81 (8), p.1378-1380

2002

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Enhancing the dot density in quantum dot infrared photodetectors via the incorporation of antimony

Applied physics letters, 2007-07, Vol.91 (1)

2007

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Excited states and selection rules in self-assembled InAs/GaAs quantum dots

Physical review. B, Condensed matter, 1999-07, Vol.60 (4), p.R2185-R2188

1999

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Polaron relaxation channel in InAs/GaAs self-assembled quantum dots

Semiconductor science and technology, 2004-04, Vol.19 (4), p.S316-S318

2004

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Experimental evaluation of impact ionization in dilute nitride GaInNAs diodes

Applied physics letters, 2013-09, Vol.103 (10)

2013

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Room-temperature operation of an InAs–GaAs–AlAs quantum-cascade laser

Applied physics letters, 2003-05, Vol.82 (20), p.3409-3411

2003

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Effect of thermal annealing and strain engineering on the fine structure of quantum dot excitons

Physical review. B, Condensed matter and materials physics, 2004-11, Vol.70 (19), Article 193303

2004

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Long wavelength bulk GaInNAs p − i − n photodiodes lattice matched to GaAs

Journal of applied physics, 2007-03, Vol.101 (6), p.064506-064506-6

2007

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Terahertz oscillations in an In0.53Ga0.47As submicron planar Gunn diode

Intraband relaxation via polaron decay in InAs self-assembled quantum dots

Dynamics of coherent and incoherent spin polarizations in ensembles of quantum dots

Long-wavelength light emission and lasing from InAs∕GaAs quantum dots covered by a GaAsSb strain-reducing layer

A comparison of partially burnt coal chars and the implications of their properties on the blast furnace process

Electron dominated impact ionization and avalanche gain characteristics in InAs photodiodes

Manipulation of the homogeneous linewidth of an individual In(Ga)As quantum dot

Suppression of InAs ∕ GaAs quantum dot decomposition by the incorporation of a GaAsSb capping layer

An evaluation of chlorination for the removal of zinc from steelmaking dusts

Photoluminescence decay time measurements from self-organized InAs/GaAs quantum dots

Far-infrared absorption studies of Be acceptors in δ-doped GaAs/AlAs multiple quantum wells

Extremely Low Excess Noise in InAs Electron Avalanche Photodiodes

Atomic scale study of the impact of the strain and composition of the capping layer on the formation of InAs quantum dots

Measurements of optical losses in mid-infrared semiconductor lasers using Fabry–Pérot transmission oscillations

Room-temperature 1.6μm light emission from InAs∕GaAs quantum dots with a thin GaAsSb cap layer

Optimizing the growth of 1.3 μm InAs/InGaAs dots-in-a-well structure

Room-temperature, ground-state lasing for red-emitting vertically aligned InAlAs/AlGaAs quantum dots grown on a GaAs(100) substrate

Intervalley scattering in GaAs–AlAs quantum cascade lasers

Enhancing the dot density in quantum dot infrared photodetectors via the incorporation of antimony

Excited states and selection rules in self-assembled InAs/GaAs quantum dots

Polaron relaxation channel in InAs/GaAs self-assembled quantum dots

Experimental evaluation of impact ionization in dilute nitride GaInNAs diodes

Room-temperature operation of an InAs–GaAs–AlAs quantum-cascade laser

Effect of thermal annealing and strain engineering on the fine structure of quantum dot excitons

Long wavelength bulk GaInNAs p − i − n photodiodes lattice matched to GaAs

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