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Fermi-dirac and random carrier distributions in quantum dot lasers

Applied physics letters, 2014-01, Vol.104 (3)

2014

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Experimental investigation of the effect of wetting-layer states on the gain–current characteristic of quantum-dot lasers

Applied physics letters, 2002-12, Vol.81 (26), p.4904-4906

2002

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In situ fabricated 3D micro-lenses for photonic integrated circuits

Optics express, 2018-05, Vol.26 (10), p.13436-13442

2018

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Design and characterisation of multi-mode interference reflector lasers for integrated photonics

Journal of physics. D, Applied physics, 2023-09, Vol.56 (38), p.384001

2023

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Impact of thermal oxidation uniformity on 150 mm GaAs- and Ge-substrate VCSELs

Journal of physics. D, Applied physics, 2023-04, Vol.56 (15), p.154002

2023

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Gain measurements on VCSEL material using segmented contact technique

Journal of physics. D, Applied physics, 2023-02, Vol.56 (7), p.74003

2023

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Carrier leakage in InGaN quantum well light-emitting diodes emitting at 480 nm

Applied physics letters, 2003-04, Vol.82 (17), p.2755-2757

2003

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Photonic integration platform with pump free microfluidics

Optics express, 2017-10, Vol.25 (20), p.23634-23644

2017

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Dual-wavelength InP quantum dot lasers

Applied physics letters, 2014-06, Vol.104 (24)

2014

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Effect of Growth Temperature on InP QD Lasers

IEEE photonics technology letters, 2010-01, Vol.22 (2), p.88-90

2010

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Determination of the piezoelectric field in InGaN quantum wells

Applied physics letters, 2005-03, Vol.86 (13), p.131108-131108-3

2005

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Optical absorption cross section of quantum dots

Journal of physics. Condensed matter, 2004-09, Vol.16 (35), p.S3749-S3756

2004

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Polarization response of quantum-confined structures using edge-photovoltage spectroscopy

Semiconductor science and technology, 2007-12, Vol.22 (12), p.1298-1301

2007

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Long wavelength quantum-dot lasers selectively populated using tunnel injection

Semiconductor science and technology, 2007-05, Vol.22 (5), p.557-560

2007

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Characterization of semiconductor laser gain media by the segmented contact method

IEEE journal of selected topics in quantum electronics, 2003-09, Vol.9 (5), p.1275-1282

2003

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Determination of single-pass optical gain and internal loss using a multisection device

Applied physics letters, 1999-10, Vol.75 (17), p.2527-2529

1999

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InP-GaInP quantum-dot lasers emitting between 690-750 nm

IEEE journal of selected topics in quantum electronics, 2005-09, Vol.11 (5), p.1035-1040

2005

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Multi-mode Interference Reflector based InAs-QD Laser

2022 28th International Semiconductor Laser Conference (ISLC), 2022, p.1-2

2022

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Thermodynamic balance in quantum dot lasers

Semiconductor science and technology, 2001-03, Vol.16 (3), p.140-143

2001

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InAsP AlGaInP GaAs QD laser operating at ∼770 nm

Journal of physics. Conference series, 2016-08, Vol.740 (1), p.12008

2016

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Recombination mechanisms in 1.3-μm InAs quantum-dot lasers

IEEE photonics technology letters, 2006-04, Vol.18 (8), p.965-967

2006

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The role of high growth temperature GaAs spacer layers in 1.3-μm In(Ga)As quantum-dot lasers

IEEE photonics technology letters, 2005-10, Vol.17 (10), p.2011-2013

2005

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Optical mode loss and gain of multiple-layer quantum-dot lasers

Applied physics letters, 2001-04, Vol.78 (18), p.2629-2631

2001

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Measurement of true spontaneous emission spectra from the facet of diode laser structures

Applied physics letters, 2002-01, Vol.80 (1), p.1-3

2002

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Thermal performance investigation of DQW GaInNAs laser diodes

Optical and quantum electronics, 2008-04, Vol.40 (5-6), p.385-390

2008

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Fermi-dirac and random carrier distributions in quantum dot lasers

Experimental investigation of the effect of wetting-layer states on the gain–current characteristic of quantum-dot lasers

In situ fabricated 3D micro-lenses for photonic integrated circuits

Design and characterisation of multi-mode interference reflector lasers for integrated photonics

Impact of thermal oxidation uniformity on 150 mm GaAs- and Ge-substrate VCSELs

Gain measurements on VCSEL material using segmented contact technique

Carrier leakage in InGaN quantum well light-emitting diodes emitting at 480 nm

Photonic integration platform with pump free microfluidics

Dual-wavelength InP quantum dot lasers

Effect of Growth Temperature on InP QD Lasers

Determination of the piezoelectric field in InGaN quantum wells

Optical absorption cross section of quantum dots

Polarization response of quantum-confined structures using edge-photovoltage spectroscopy

Long wavelength quantum-dot lasers selectively populated using tunnel injection

Characterization of semiconductor laser gain media by the segmented contact method

Determination of single-pass optical gain and internal loss using a multisection device

InP-GaInP quantum-dot lasers emitting between 690-750 nm

Multi-mode Interference Reflector based InAs-QD Laser

Thermodynamic balance in quantum dot lasers

InAsP AlGaInP GaAs QD laser operating at ∼770 nm

Recombination mechanisms in 1.3-μm InAs quantum-dot lasers

The role of high growth temperature GaAs spacer layers in 1.3-μm In(Ga)As quantum-dot lasers

Optical mode loss and gain of multiple-layer quantum-dot lasers

Measurement of true spontaneous emission spectra from the facet of diode laser structures

Thermal performance investigation of DQW GaInNAs laser diodes

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