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Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical Performance

Journal of the Electrochemical Society, 2008, Vol.155 (7), p.H552

2008

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Capacitance-voltage characterization of GaAs–Al2O3 interfaces

Applied physics letters, 2008-11, Vol.93 (18)

2008

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Capacitance–Voltage Characterization of GaAs–Oxide Interfaces

Journal of the Electrochemical Society, 2008, Vol.155 (12), p.H945

2008

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Si cap passivation for Ge nMOS applications

Microelectronic engineering, 2013-09, Vol.109, p.46-49

2013

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Electrical Properties of III-V/Oxide Interfaces

ECS transactions, 2009, Vol.19 (5), p.375-386

2009

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Atomic layer deposition of Al2O3 on S-passivated Ge

Microelectronic engineering, 2011-07, Vol.88 (7), p.1553-1556

2011

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Scalability of InGaAs gate-all-around FET integrated on 300mm Si platform: Demonstration of channel width down to 7nm and Lg down to 36nm

2016 IEEE Symposium on VLSI Technology, 2016, p.1-2

2016

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Self-Affine Surface Roughness of Chemically and Thermally Cleaned Ge(100) Surfaces

Journal of the Electrochemical Society, 2011, Vol.158 (10), p.H1090

2011

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Polar Order in Spin-Coated Films of a Regioregular Chiral Poly[(S)-3-(3,7-dimethyloctyl)thiophene]

Advanced materials (Weinheim), 2005-03, Vol.17 (6), p.708-712

2005

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A Study of the Influence of Typical Wet Chemical Treatments on the Germanium Wafer Surface

Solid state phenomena, 2005-04, Vol.103-104, p.27-30

2005

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A deep-level transient spectroscopy study of transition metals in n-type germanium

Materials science in semiconductor processing, 2006-08, Vol.9 (4), p.559-563

2006

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Nonlinear optical properties of spincoated films of chiral polythiophenes

Chemical physics letters, 2005-03, Vol.404 (1), p.112-115

2005

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Lifetime and leakage current considerations in metal-doped germanium

Journal of materials science. Materials in electronics, 2007-07, Vol.18 (7), p.799-804

2007

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Second-order nonlinear optical properties of chiral materials

Materials science & engineering. R, Reports : a review journal, 2003-11, Vol.42 (5), p.115-155

2003

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Challenges and opportunities in advanced Ge pMOSFETs

Materials science in semiconductor processing, 2012-12, Vol.15 (6), p.588-600

2012

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Understanding the suppressed charge trapping in relaxed- and strained-Ge/SiO2/HfO2 pMOSFETs and implications for the screening of alternative high-mobility substrate/dielectric CMOS gate stacks

2013 IEEE International Electron Devices Meeting, 2013, p.15.2.1-15.2.4

2013

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Circular-difference effects in second-harmonic generation from thin films

Synthetic metals, 2001-10, Vol.124 (1), p.191-193

2001

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Paramagnetic oxide traps in Sc2O3-passivated (100)Ge/HfO2 stacks

Microelectronic engineering, 2015-11, Vol.147, p.180-183

2015

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Ultimate nano-electronics: New materials and device concepts for scaling nano-electronics beyond the Si roadmap

Microelectronic engineering, 2015-01, Vol.132, p.218-225

2015

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Electric-Field-Modulated Circular-Difference Effects in Second-Harmonic Generation from a Chiral Liquid Crystal

Angewandte Chemie (International ed.), 2002-10, Vol.41 (20), p.3882-3884

2002

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Impact of slow and fast oxide traps on In0.53Ga0.47As device operation studied using CET maps

2018 IEEE International Reliability Physics Symposium (IRPS), 2018, p.5A.3-1-5A.3-7

2018

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Gate-all-around InGaAs nanowire FETS with peak transconductance of 2200μS/μm at 50nm Lg using a replacement Fin RMG flow

2015 IEEE International Electron Devices Meeting (IEDM), 2015, p.31.1.1-31.1.4

2015

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S-passivation of the Ge gate stack: Tuning the gate stack properties by changing the atomic layer deposition oxidant precursor

Journal of applied physics, 2011-10, Vol.110 (8), p.084907-084907-8

2011

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Atomic Layer Deposition of High-κ Dielectrics on Sulphur-Passivated Germanium

Journal of the Electrochemical Society, 2011, Vol.158 (7), p.H687

2011

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Ge nFET with high electron mobility and superior PBTI reliability enabled by monolayer-Si surface passivation and La-induced interface dipole formation

2015 IEEE International Electron Devices Meeting (IEDM), 2015, p.21.6.1-21.6.4

2015

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Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical Performance

Capacitance-voltage characterization of GaAs–Al2O3 interfaces

Capacitance–Voltage Characterization of GaAs–Oxide Interfaces

Si cap passivation for Ge nMOS applications

Electrical Properties of III-V/Oxide Interfaces

Atomic layer deposition of Al2O3 on S-passivated Ge

Scalability of InGaAs gate-all-around FET integrated on 300mm Si platform: Demonstration of channel width down to 7nm and Lg down to 36nm

Self-Affine Surface Roughness of Chemically and Thermally Cleaned Ge(100) Surfaces

Polar Order in Spin-Coated Films of a Regioregular Chiral Poly[(S)-3-(3,7-dimethyloctyl)thiophene]

A Study of the Influence of Typical Wet Chemical Treatments on the Germanium Wafer Surface

A deep-level transient spectroscopy study of transition metals in n-type germanium

Nonlinear optical properties of spincoated films of chiral polythiophenes

Lifetime and leakage current considerations in metal-doped germanium

Second-order nonlinear optical properties of chiral materials

Challenges and opportunities in advanced Ge pMOSFETs

Understanding the suppressed charge trapping in relaxed- and strained-Ge/SiO2/HfO2 pMOSFETs and implications for the screening of alternative high-mobility substrate/dielectric CMOS gate stacks

Circular-difference effects in second-harmonic generation from thin films

Paramagnetic oxide traps in Sc2O3-passivated (100)Ge/HfO2 stacks

Ultimate nano-electronics: New materials and device concepts for scaling nano-electronics beyond the Si roadmap

Electric-Field-Modulated Circular-Difference Effects in Second-Harmonic Generation from a Chiral Liquid Crystal

Impact of slow and fast oxide traps on In0.53Ga0.47As device operation studied using CET maps

Gate-all-around InGaAs nanowire FETS with peak transconductance of 2200μS/μm at 50nm Lg using a replacement Fin RMG flow

S-passivation of the Ge gate stack: Tuning the gate stack properties by changing the atomic layer deposition oxidant precursor

Atomic Layer Deposition of High-κ Dielectrics on Sulphur-Passivated Germanium

Ge nFET with high electron mobility and superior PBTI reliability enabled by monolayer-Si surface passivation and La-induced interface dipole formation

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