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off-State Degradation in Drain-Extended NMOS Transistors: Interface Damage and Correlation to Dielectric Breakdown

IEEE transactions on electron devices, 2007-10, Vol.54 (10), p.2669-2678

2007

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Device and technology evolution for Si-based RF integrated circuits

IEEE transactions on electron devices, 2005-07, Vol.52 (7), p.1235-1258

2005

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RF CMOS on high-resistivity substrates for system-on-chip applications

IEEE transactions on electron devices, 2003-03, Vol.50 (3), p.567-576

2003

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High-voltage drain extended MOS transistors for 0.18-μm logic CMOS process

IEEE transactions on electron devices, 2001-08, Vol.48 (8), p.1751-1755

2001

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280GHz and 860GHz image sensors using Schottky-barrier diodes in 0.13μm digital CMOS

2012 IEEE International Solid-State Circuits Conference, 2012, p.254-256

2012

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Broadband Root-Mean-Square Detector in CMOS for On-Chip Measurements of Millimeter-Wave Voltages

IEEE electron device letters, 2012-06, Vol.33 (6), p.752-754

2012

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I-Gate Body-Tied Silicon-on-Insulator MOSFETs With Improved High-Frequency Performance

IEEE electron device letters, 2011-04, Vol.32 (4), p.443-445

2011

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Defect reduction by thermal annealing of GaAs layers grown by molecular beam epitaxy on Si substrates

Applied physics letters, 1987-01, Vol.50 (1), p.31-33

1987

Volltextzugriff (PDF)

A Physical Understanding of RF Noise in Bulk nMOSFETs With Channel Lengths in the Nanometer Regime

IEEE transactions on electron devices, 2012-01, Vol.59 (1), p.197-205

2012

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Foreword special issue on device integration technology for mixed-signal SOC

IEEE transactions on electron devices, 2003-03, Vol.50 (3), p.543-545

2003

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Compact, High Impedance and Wide Bandwidth Detectors for Characterization of Millimeter Wave Performance

IEEE journal of solid-state circuits, 2012-10, Vol.47 (10), p.2335-2343

2012

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Anomalous leakage current in LPCVD PolySilicon MOSFET's

IEEE transactions on electron devices, 1985-09, Vol.32 (9), p.1878-1884

1985

Volltextzugriff (PDF)

Characteristics and three-dimensional integration of MOSFET's in small-grain LPCVD polycrystalline Silicon

IEEE transactions on electron devices, 1985-02, Vol.32 (2), p.258-281

1985

Volltextzugriff (PDF)

Negative differential resistance through real-space electron transfer

Applied physics letters, 1979-09, Vol.35 (6), p.469-471

1979

Volltextzugriff (PDF)

Schottky diodes in CMOS for terahertz circuits and systems

2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2013, p.24-26

2013

Volltextzugriff (PDF)

Hot-electron degradation of n-channel polysilicon MOSFETs

IEEE transactions on electron devices, 1988-02, Vol.35 (2), p.152-157

1988

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Growth of GaAs on GaAs-coated Si by liquid-phase epitaxy

Journal of applied physics, 1988-02, Vol.63 (4), p.1075-1079

1988

Volltextzugriff (PDF)

Monolithic process for co-integration of GaAs MESFET and silicon CMOS devices and circuits

IEEE transactions on electron devices, 1990-03, Vol.37 (3), p.548-555

1990

Volltextzugriff (PDF)

A comprehensive analysis of off-state stress in drain extended PMOS transistors: Theory and characterization of parametric degradation and dielectric failure

2008 IEEE International Reliability Physics Symposium, 2008, p.566-574

2008

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GaAs E/D MESFET 1-kbit static RAM fabricated on silicon substrate

IEEE electron device letters, 1987-03, Vol.8 (3), p.121-123

1987

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Selective liquid phase epitaxy and defect reduction in GaAs grown on GaAs-coated silicon by molecular beam epitaxy

Applied physics letters, 1987-12, Vol.51 (23), p.1913-1915

1987

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Dislocation reduction by impurity diffusion in epitaxial GaAs grown on Si

Applied physics letters, 1988-05, Vol.52 (21), p.1812-1814

1988

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A transmission line model for silicided diffusions: Impact on the performance of VLSI circuits

IEEE transactions on electron devices, 1982-04, Vol.29 (4), p.651-661

1982

Volltextzugriff (PDF)

Selected area heteroepitaxial growth of GaAs on silicon for advanced device structures

Thin solid films, 1989-12, Vol.181 (1), p.213-225

1989

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GaAs/AlGaAs heterojunction emitter-down bipolar transistors fabricated on GaAs-on-Si substrate

IEEE electron device letters, 1987-02, Vol.8 (2), p.50-52

1987

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off-State Degradation in Drain-Extended NMOS Transistors: Interface Damage and Correlation to Dielectric Breakdown

Device and technology evolution for Si-based RF integrated circuits

RF CMOS on high-resistivity substrates for system-on-chip applications

High-voltage drain extended MOS transistors for 0.18-μm logic CMOS process

280GHz and 860GHz image sensors using Schottky-barrier diodes in 0.13μm digital CMOS

Broadband Root-Mean-Square Detector in CMOS for On-Chip Measurements of Millimeter-Wave Voltages

I-Gate Body-Tied Silicon-on-Insulator MOSFETs With Improved High-Frequency Performance

Defect reduction by thermal annealing of GaAs layers grown by molecular beam epitaxy on Si substrates

A Physical Understanding of RF Noise in Bulk nMOSFETs With Channel Lengths in the Nanometer Regime

Foreword special issue on device integration technology for mixed-signal SOC

Compact, High Impedance and Wide Bandwidth Detectors for Characterization of Millimeter Wave Performance

Anomalous leakage current in LPCVD PolySilicon MOSFET's

Characteristics and three-dimensional integration of MOSFET's in small-grain LPCVD polycrystalline Silicon

Negative differential resistance through real-space electron transfer

Schottky diodes in CMOS for terahertz circuits and systems

Hot-electron degradation of n-channel polysilicon MOSFETs

Growth of GaAs on GaAs-coated Si by liquid-phase epitaxy

Monolithic process for co-integration of GaAs MESFET and silicon CMOS devices and circuits

A comprehensive analysis of off-state stress in drain extended PMOS transistors: Theory and characterization of parametric degradation and dielectric failure

GaAs E/D MESFET 1-kbit static RAM fabricated on silicon substrate

Selective liquid phase epitaxy and defect reduction in GaAs grown on GaAs-coated silicon by molecular beam epitaxy

Dislocation reduction by impurity diffusion in epitaxial GaAs grown on Si

A transmission line model for silicided diffusions: Impact on the performance of VLSI circuits

Selected area heteroepitaxial growth of GaAs on silicon for advanced device structures

GaAs/AlGaAs heterojunction emitter-down bipolar transistors fabricated on GaAs-on-Si substrate

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