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Transparent Resistive Switching Memory Using ITO/AlN/ITO Capacitors

IEEE electron device letters, 2011-08, Vol.32 (8), p.1125-1127

2011

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Differential regulation and synthetic lethality of exclusive RB1 and CDKN2A mutations in lung cancer

International journal of oncology, 2016-01, Vol.48 (1), p.367-375

2016

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A CMOS-Process-Compatible ZnO-Based Charge-Trap Flash Memory

IEEE electron device letters, 2013-02, Vol.34 (2), p.238-240

2013

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Comparative investigation of endurance and bias temperature instability characteristics in metal-Al₂O₃-nitride-oxide-semiconductor (MANOS) and semiconductor-oxide-nitride-oxide-semiconductor (SONOS) charge trap flash memory

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2012, 12(4), 48, pp.449-457

2012

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High Bit Cost Scalability and Reliable Cell Characteristics for 7th Generation 1Tb 4Bit/Cell 3D-NAND Flash

2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023, p.1-2

2023

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Large resistive-switching phenomena observed in Ag/Si3N4/Al memory cells

Semiconductor science and technology, 2010-06, Vol.25 (6), p.065002-065002

2010

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Analysis of electronic carrier traps in Cr-SrTiO3-based charge trap flash memory devices

Applied physics letters, 2012-06, Vol.100 (24)

2012

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Charge trap flash memory using ferroelectric materials as a blocking layer

Applied physics letters, 2012-04, Vol.100 (17), p.173507-173507-4

2012

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Observation of Highly Reproducible Resistive-Switching Behavior from Solution-Based ZnO Nanorods

Journal of nanoscience and nanotechnology, 2013-09, Vol.13 (9), p.6212-6215

2013

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Investigation of vertically trapped charge locations in Cr-doped-SrTiO3-based charge trapping memory devices

Journal of applied physics, 2012-10, Vol.112 (7)

2012

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Electrical properties of Cr-doped SrTiO3 films as a switch material in ReCTF devices

Microelectronic engineering, 2012-10, Vol.98, p.321-324

2012

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High-speed and low-voltage performance in a charge-trapping flash memory using a NiO tunnel junction

Journal of physics. D, Applied physics, 2011-04, Vol.44 (15), p.155105

2011

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Realization of One-Diode–Type Resistive-Switching Memory with Cr–SrTiO$_{3}$ Film

Applied physics express, 2012-09, Vol.5 (9), p.91202

2012

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Comparative investigation of endurance and bias temperature instability characteristics in metal-Al 2 O 3 -nitride-oxide-semiconductor (MANOS) and semiconductor-oxide-nitride-oxide-semiconductor (SONOS) charge trap flash memory

Journal of semiconductor technology and science, 2012-12, Vol.12 (4), p.449-457

2012

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Large resistive-switching phenomena observed in Ag/Si 3 N 4 /Al memory cells

Semiconductor science and technology, 2010-06, Vol.25 (6), p.65002

2010

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Countermeasure of Sniffing Attack : Survey

Convergence Society for SMB, 2016-06, Vol.6 (2), p.31-36

2016

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Comparative investigation of endurance and bias temperature instability characteristics in metal-Al 2 O 3 -nitride-oxide-semiconductor (MANOS) and semiconductor-oxide-nitride-oxide-semiconductor (SONOS) charge trap flash memory

Journal of semiconductor technology and science, 2012, Vol.12 (4), p.449-457

2012

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Hydrogen passivation effects under negative bias temperature instability stress in metal/silicon-oxide/silicon-nitride/silicon-oxide/silicon capacitors for flash memories

Microelectronics and reliability, 2010, Vol.50 (1), p.21-25

2010

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Investigation of Simulated and Measured Program Characteristicsin 4-bit/cell Charge-trap Flash (CTF) Memories

Journal of the Korean Physical Society, 2009-07, Vol.55 (1), p.367-371

2009

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Process Improvements for 7th Generation 1Tb Quad-Level Cell 3D NAND Flash Memory in Mass Production

2023 IEEE International Memory Workshop (IMW), 2023, p.1-4

2023

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Negative-/Positive-Bias-Instability Analysis of the Memory Characteristics Improved by Hydrogen Postannealing in MANOS Capacitors

IEEE transactions on device and materials reliability, 2010-06, Vol.10 (2), p.295-300

2010

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Mobile phone dependency and its impacts on adolescents’ social and academic behaviors

Computers in human behavior, 2016-10, Vol.63, p.282-292

2016

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Synthesis and reactivity of a mononuclear non-haem cobalt(IV)-oxo complex

Nature communications, 2017-03, Vol.8 (1), p.14839-14839, Article 14839

2017

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Effect of inclination on SB LOCA transient of a floating nuclear reactor in MARS-KS analysis using moving reactor model

Nuclear engineering and design, 2024-09, Vol.426, p.113407, Article 113407

2024

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Evaluation of rosuvastatin-induced QT prolongation risk using real-world data, in vitro cardiomyocyte studies, and mortality assessment

Scientific reports, 2023-05, Vol.13 (1), p.8108-8108, Article 8108

2023

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Transparent Resistive Switching Memory Using ITO/AlN/ITO Capacitors

Differential regulation and synthetic lethality of exclusive RB1 and CDKN2A mutations in lung cancer

A CMOS-Process-Compatible ZnO-Based Charge-Trap Flash Memory

Comparative investigation of endurance and bias temperature instability characteristics in metal-Al₂O₃-nitride-oxide-semiconductor (MANOS) and semiconductor-oxide-nitride-oxide-semiconductor (SONOS) charge trap flash memory

High Bit Cost Scalability and Reliable Cell Characteristics for 7th Generation 1Tb 4Bit/Cell 3D-NAND Flash

Large resistive-switching phenomena observed in Ag/Si3N4/Al memory cells

Analysis of electronic carrier traps in Cr-SrTiO3-based charge trap flash memory devices

Charge trap flash memory using ferroelectric materials as a blocking layer

Observation of Highly Reproducible Resistive-Switching Behavior from Solution-Based ZnO Nanorods

Investigation of vertically trapped charge locations in Cr-doped-SrTiO3-based charge trapping memory devices

Electrical properties of Cr-doped SrTiO3 films as a switch material in ReCTF devices

High-speed and low-voltage performance in a charge-trapping flash memory using a NiO tunnel junction

Realization of One-Diode–Type Resistive-Switching Memory with Cr–SrTiO$_{3}$ Film

Comparative investigation of endurance and bias temperature instability characteristics in metal-Al 2 O 3 -nitride-oxide-semiconductor (MANOS) and semiconductor-oxide-nitride-oxide-semiconductor (SONOS) charge trap flash memory

Large resistive-switching phenomena observed in Ag/Si 3 N 4 /Al memory cells

Countermeasure of Sniffing Attack : Survey

Comparative investigation of endurance and bias temperature instability characteristics in metal-Al 2 O 3 -nitride-oxide-semiconductor (MANOS) and semiconductor-oxide-nitride-oxide-semiconductor (SONOS) charge trap flash memory

Hydrogen passivation effects under negative bias temperature instability stress in metal/silicon-oxide/silicon-nitride/silicon-oxide/silicon capacitors for flash memories

Investigation of Simulated and Measured Program Characteristicsin 4-bit/cell Charge-trap Flash (CTF) Memories

Process Improvements for 7th Generation 1Tb Quad-Level Cell 3D NAND Flash Memory in Mass Production

Negative-/Positive-Bias-Instability Analysis of the Memory Characteristics Improved by Hydrogen Postannealing in MANOS Capacitors

Mobile phone dependency and its impacts on adolescents’ social and academic behaviors

Synthesis and reactivity of a mononuclear non-haem cobalt(IV)-oxo complex

Effect of inclination on SB LOCA transient of a floating nuclear reactor in MARS-KS analysis using moving reactor model

Evaluation of rosuvastatin-induced QT prolongation risk using real-world data, in vitro cardiomyocyte studies, and mortality assessment

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