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Characterization of double Shockley-type stacking faults formed in lightly doped 4H-SiC epitaxial films

Journal of crystal growth, 2018-05, Vol.490, p.89-96

2018

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Characterization of stacking faults with emission wavelengths of over 500 nm formed in 4H-SiC epitaxial films

Journal of crystal growth, 2017-10, Vol.476, p.99-106

2017

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Annealing induced extended defects in as-grown and ion-implanted 4H-SiC epitaxial layers

Journal of applied physics, 2010-07, Vol.108 (1), p.013511-013511-8

2010

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Relation between Defects on 4H-SiC Epitaxial Surface and Gate Oxide Reliability

Materials science forum, 2013-01, Vol.740-742, p.745-748

2013

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Systematic investigation on in-plane anisotropy of surface and buried channel mobility of metal-oxide-semiconductor field-effect-transistors on Si-, a-, and m-face 4H-SiC

Applied physics letters, 2015-03, Vol.106 (10)

2015

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Deep ultraviolet Raman scattering characterization of ion-implanted SiC crystals

Journal of applied physics, 2005-06, Vol.97 (12), p.123507-123507-8

2005

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Excellent effects of hydrogen postoxidation annealing on inversion channel mobility of 4H-SiC MOSFET fabricated on (11 2 0) face

IEEE electron device letters, 2002-01, Vol.23 (1), p.13-15

2002

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High channel mobility in normally-off 4H-SiC buried channel MOSFETs

IEEE electron device letters, 2001-06, Vol.22 (6), p.272-274

2001

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Strong dependence of the inversion mobility of 4H and 6H SiC(0001) MOSFETs on the water content in pyrogenic re-oxidation annealing

IEEE electron device letters, 2002-03, Vol.23 (3), p.136-138

2002

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Influence of Processing and of Material Defects on the Electrical Characteristics of SiC-SBDs and SiC-MOSFETs

Materials science forum, 2010-04, Vol.645-648, p.655-660

2010

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Impact of the Wafer Quality on the Reliability of MOS Structure on the C-Face of 4H-SiC

Materials science forum, 2009-01, Vol.600-603, p.783-786

2009

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Formation of Extended Defects in 4H-SiC Induced by Ion Implantation/Annealing

Materials science forum, 2009-01, Vol.615-617, p.477-480

2009

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Effect of oxidation method and post-oxidation annealing on interface properties of metal–oxide–semiconductor structures formed on n -type 4H-SiC C(0001̄) face

Applied physics letters, 2000-08, Vol.77 (6), p.866-868

2000

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Detection and Characterization of Defects Induced by Ion Implantation/Annealing Process in SiC

Materials science forum, 2009, Vol.600-603, p.611-614

2009

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4H-SiC Epi-Ready Substrate Qualification by Using Mirror Electron Microscope Inspection System

Materials science forum, 2020-07, Vol.1004, p.369-375

2020

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Characterization of stacking faults with emission wavelengths of over 500nm formed in 4H-SiC epitaxial films

Journal of crystal growth, 2017-10, Vol.476, p.99-106

2017

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Challenges of 4H-SiC MOSFETs on the C(000-1) Face toward the Achievement of Ultra Low On-Resistance

Materials science forum, 2009, Vol.600-603, p.907-912

2009

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Effects of Annealing Conditions on Resistance Lowering of High-Phosphorus-Implanted 4H-SiC

Materials science forum, 2004-01, Vol.457-460, p.901-904

2004

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A Long-Term Reliability of Thermal Oxides Grown on n-Type 4H-SiC Wafer

Materials science forum, 2004-01, Vol.457-460, p.1269-1274

2004

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Comparative Study of Characteristics of Lateral MOSFETs Fabricated on 4H-SiC (11-20) and (1-100) Faces

Materials science forum, 2015-06, Vol.821-823, p.721-724

2015

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Characterization of Electrical Properties in High-Dose Implanted and Post-Implantation-Annealed 4H-SiC Wafers using Infrared Reflectance Spectroscopy

Materials science forum, 2004-06, Vol.457-460, p.905-908

2004

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Electrical Characteristics/Reliability Affected by Defects Analyzed by the Integrated Evaluation Platform for SiC Epitaxial Films

Materials science forum, 2014-02, Vol.778-780, p.979-984

2014

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The post-annealing temperature dependences of electrical properties and surface morphologies for arsenic ion-implanted 4H-SiC at high temperature

Applied surface science, 2000-06, Vol.159, p.544-549

2000

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Nitridation Effects of Gate Oxide on Channel Properties of SiC Trench MOSFETs

Materials science forum, 2014-02, Vol.778-780, p.615-618

2014

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Reliability Improvement and Optimization of Trench Orientation of 4H-SiC Trench-Gate Oxide

Materials science forum, 2014-02, Vol.778-780, p.537-540

2014

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Characterization of double Shockley-type stacking faults formed in lightly doped 4H-SiC epitaxial films

Characterization of stacking faults with emission wavelengths of over 500 nm formed in 4H-SiC epitaxial films

Annealing induced extended defects in as-grown and ion-implanted 4H-SiC epitaxial layers

Relation between Defects on 4H-SiC Epitaxial Surface and Gate Oxide Reliability

Systematic investigation on in-plane anisotropy of surface and buried channel mobility of metal-oxide-semiconductor field-effect-transistors on Si-, a-, and m-face 4H-SiC

Deep ultraviolet Raman scattering characterization of ion-implanted SiC crystals

Excellent effects of hydrogen postoxidation annealing on inversion channel mobility of 4H-SiC MOSFET fabricated on (11 2 0) face

High channel mobility in normally-off 4H-SiC buried channel MOSFETs

Strong dependence of the inversion mobility of 4H and 6H SiC(0001) MOSFETs on the water content in pyrogenic re-oxidation annealing

Influence of Processing and of Material Defects on the Electrical Characteristics of SiC-SBDs and SiC-MOSFETs

Impact of the Wafer Quality on the Reliability of MOS Structure on the C-Face of 4H-SiC

Formation of Extended Defects in 4H-SiC Induced by Ion Implantation/Annealing

Effect of oxidation method and post-oxidation annealing on interface properties of metal–oxide–semiconductor structures formed on n -type 4H-SiC C(0001̄) face

Detection and Characterization of Defects Induced by Ion Implantation/Annealing Process in SiC

4H-SiC Epi-Ready Substrate Qualification by Using Mirror Electron Microscope Inspection System

Characterization of stacking faults with emission wavelengths of over 500nm formed in 4H-SiC epitaxial films

Challenges of 4H-SiC MOSFETs on the C(000-1) Face toward the Achievement of Ultra Low On-Resistance

Effects of Annealing Conditions on Resistance Lowering of High-Phosphorus-Implanted 4H-SiC

A Long-Term Reliability of Thermal Oxides Grown on n-Type 4H-SiC Wafer

Comparative Study of Characteristics of Lateral MOSFETs Fabricated on 4H-SiC (11-20) and (1-100) Faces

Characterization of Electrical Properties in High-Dose Implanted and Post-Implantation-Annealed 4H-SiC Wafers using Infrared Reflectance Spectroscopy

Electrical Characteristics/Reliability Affected by Defects Analyzed by the Integrated Evaluation Platform for SiC Epitaxial Films

The post-annealing temperature dependences of electrical properties and surface morphologies for arsenic ion-implanted 4H-SiC at high temperature

Nitridation Effects of Gate Oxide on Channel Properties of SiC Trench MOSFETs

Reliability Improvement and Optimization of Trench Orientation of 4H-SiC Trench-Gate Oxide

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