UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Full InGaN red light emitting diodes

Journal of applied physics, 2020-10, Vol.128 (13)

2020

Volltextzugriff (PDF)

Determination of the diffusion lengths of Ga adatoms using GaN stripe profiling

Physica status solidi. A, Applications and materials science, 2015-04, Vol.212 (4), p.851-854

2015

Volltextzugriff (PDF)

High growth rate MOVPE of Al(Ga)N in planetary reactor

Journal of crystal growth, 2012-08, Vol.352 (1), p.209-213

2012

Volltextzugriff (PDF)

Fast AlGaN growth in a whole composition range in planetary reactor

Journal of crystal growth, 2013-05, Vol.370, p.7-11

2013

Volltextzugriff (PDF)

Gallium nitride nanowires and microwires with exceptional length grown by metal organic chemical vapor deposition via titanium film

Journal of applied physics, 2015-01, Vol.117 (2)

2015

Volltextzugriff (PDF)

Lattice dynamics of short-period AlN/GaN superlattices: Theory and experiment

Physica status solidi. A, Applications and materials science, 2013-03, Vol.210 (3), p.484-487

2013

Volltextzugriff (PDF)

Study of electrical properties of single GaN nanowires grown by MOCVD with a Ti mask

Journal of physics. Conference series, 2016-08, Vol.741 (1), p.12007

2016

Volltextzugriff (PDF)

Single quantum well deep-green LEDs with buried InGaN/GaN short-period superlattice

Journal of crystal growth, 2011-01, Vol.315 (1), p.267-271

2011

Volltextzugriff (PDF)

GaN nanowires growth with record growth rate using Ti thin film

Journal of physics. Conference series, 2014-01, Vol.572 (1), p.12030-5

2014

Volltextzugriff (PDF)

Metal organic vapor phase epitaxy growth of (Al)GaN heterostructures on SiC/Si(111) templates synthesized by topochemical method of atoms substitution

Physica status solidi. A, Applications and materials science, 2017-10, Vol.214 (10), p.n/a

2017

Volltextzugriff (PDF)

Growth and structure of GaN layers on silicon carbide synthesized on a Si substrate by the substitution of atoms: A model of the formation of V-defects during the growth of GaN

Physics of the solid state, 2015-09, Vol.57 (9), p.1899-1907

2015

Volltextzugriff (PDF)

Various types of GaN/InGaN nanostructures grown by MOCVD on Si(111) substrate

Physica status solidi. C, 2013-03, Vol.10 (3), p.441-444

2013

Volltextzugriff (PDF)

Selective area growth of GaN on r-plane sapphire by MOCVD

Physica status solidi. C, 2013-03, Vol.10 (3), p.373-376

2013

Volltextzugriff (PDF)

Synthesis of an LED structure on the and (0001) faces of mesa stripes grown by selective-area epitaxy

Technical physics letters, 2014, Vol.40 (1), p.18-20

2014

Volltextzugriff (PDF)

Synthesis of an LED structure on the $$\left( {11\bar 20} \right)$$ and (0001) faces of mesa stripes grown by selective-area epitaxy

Technical physics letters, 2014-01, Vol.40 (1), p.18-20

2014

Volltextzugriff (PDF)

In vivo effects of human follicle-stimulating hormone-related synthetic peptide hFSH-beta-(81-95) and its subdomain hFSH-beta-(90-95) on the mouse estrous cycle

Biology of reproduction, 1998-03, Vol.58 (3), p.821-825

1998

Volltextzugriff (PDF)

X-ray diffraction study of short-period AlN/GaN superlattices

Crystallography reports, 2013-12, Vol.58 (7), p.953-958

2013

Volltextzugriff (PDF)

Synthesis of GaN nano- and microwire crystals induced by a titanium nanolayer

Technical physics letters, 2014-05, Vol.40 (5), p.372-374

2014

Volltextzugriff (PDF)

Influence of the carrier Gas, trimethylgallium flow, and growth time on the character of the selective epitaxy of GaN

Semiconductors (Woodbury, N.Y.), 2013-03, Vol.47 (3), p.437-442

2013

Volltextzugriff (PDF)

Composite InGaN/GaN/InAlN heterostructures emitting in the yellow-red spectral region

Semiconductors (Woodbury, N.Y.), 2012-10, Vol.46 (10), p.1281-1285

2012

Volltextzugriff (PDF)

Specific features of gallium nitride selective epitaxy in round windows

Technical physics letters, 2011-08, Vol.37 (8), p.735-738

2011

Volltextzugriff (PDF)

Group-III-nitride-based light-emitting diode on silicon substrate with epitaxial nanolayer of silicon carbide

Technical physics letters, 2012-03, Vol.38 (3), p.297-299

2012

Volltextzugriff (PDF)

Double-cross epitaxial overgrowth of nonpolar gallium nitride layers

Technical physics letters, 2012-03, Vol.38 (3), p.265-267

2012

Volltextzugriff (PDF)

Fast AlGaN growth in a whole composition range in planetary reactor

Journal of crystal growth, 2013, Vol.370, p.7-11

2013

Volltextzugriff (PDF)

High growth rate MOVPE of Al(Ga)N in planetary reactor

Journal of crystal growth, 2012, Vol.352 (1), p.209-213

2012

Volltextzugriff (PDF)

1 – 25 von 37

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(36)
Mit Volltextzugriff
(36)

Publikationsform

Artikel
(34)
Tagungsberichte
(3)

Sprache

Englisch
(34)
Russisch
(3)

Erscheinungsjahr

n.n

Thema

Science & Technology
(26)
Physics
(21)
Physical Sciences
(20)
Physics, Applied
(13)
Materials Science
(10)
Gallium Nitrides
(9)
Physics And Astronomy
(9)
Technology
(9)
Materials Science, Multidisciplinary
(8)
Physics, Condensed Matter
(8)
Animals
(6)
Life Sciences & Biomedicine
(6)
Classical And Continuum Physics
(5)
Crystallography
(5)
Female
(5)
Mice
(5)
Nanowires
(5)
Peptide Fragments - Pharmacology
(5)
Body Weight - Drug Effects
(4)
Epitaxy
(4)

15 weitere anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

Full InGaN red light emitting diodes

Determination of the diffusion lengths of Ga adatoms using GaN stripe profiling

High growth rate MOVPE of Al(Ga)N in planetary reactor

Fast AlGaN growth in a whole composition range in planetary reactor

Gallium nitride nanowires and microwires with exceptional length grown by metal organic chemical vapor deposition via titanium film

Lattice dynamics of short-period AlN/GaN superlattices: Theory and experiment

Study of electrical properties of single GaN nanowires grown by MOCVD with a Ti mask

Single quantum well deep-green LEDs with buried InGaN/GaN short-period superlattice

GaN nanowires growth with record growth rate using Ti thin film

Metal organic vapor phase epitaxy growth of (Al)GaN heterostructures on SiC/Si(111) templates synthesized by topochemical method of atoms substitution

Growth and structure of GaN layers on silicon carbide synthesized on a Si substrate by the substitution of atoms: A model of the formation of V-defects during the growth of GaN

Various types of GaN/InGaN nanostructures grown by MOCVD on Si(111) substrate

Selective area growth of GaN on r-plane sapphire by MOCVD

Synthesis of an LED structure on the and (0001) faces of mesa stripes grown by selective-area epitaxy

Synthesis of an LED structure on the $$\left( {11\bar 20} \right)$$ and (0001) faces of mesa stripes grown by selective-area epitaxy

In vivo effects of human follicle-stimulating hormone-related synthetic peptide hFSH-beta-(81-95) and its subdomain hFSH-beta-(90-95) on the mouse estrous cycle

X-ray diffraction study of short-period AlN/GaN superlattices

Synthesis of GaN nano- and microwire crystals induced by a titanium nanolayer

Influence of the carrier Gas, trimethylgallium flow, and growth time on the character of the selective epitaxy of GaN

Composite InGaN/GaN/InAlN heterostructures emitting in the yellow-red spectral region

Specific features of gallium nitride selective epitaxy in round windows

Group-III-nitride-based light-emitting diode on silicon substrate with epitaxial nanolayer of silicon carbide

Double-cross epitaxial overgrowth of nonpolar gallium nitride layers

Fast AlGaN growth in a whole composition range in planetary reactor

High growth rate MOVPE of Al(Ga)N in planetary reactor

Suchergebnisse filtern