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Origins of nanoscale emission inhomogeneities of high content red emitting InGaN/InGaN quantum wells

Journal of applied physics, 2021-05, Vol.129 (17)

2021

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Temperature driven structural evolution of Ge-rich GeSbTe alloys and role of N-doping

Journal of applied physics, 2020-12, Vol.128 (21)

2020

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Spectroscopic study of nitrogen incorporation in Ge, Sb, and Te elemental systems: A step toward the understanding of nitrogen effect in phase-change materials

Journal of applied physics, 2022-11, Vol.132 (20)

2022

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Polarized cathodoluminescence for strain measurement

Review of scientific instruments, 2019-04, Vol.90 (4)

2019

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Mapping of the electrostatic potentials in MOCVD and hybrid GaN tunnel junctions for InGaN/GaN blue emitting light emitting diodes by off-axis electron holography correlated with structural, chemical, and optoelectronic characterization

Journal of applied physics, 2021-07, Vol.130 (2)

2021

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Hydrogen implantation-induced blistering in diamond: Toward diamond layer transfer by the Smart Cut™ technique

Diamond and related materials, 2022-06, Vol.126, p.109085, Article 109085

2022

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Multi-microscopy nanoscale characterization of the doping profile in a hybrid Mg/Ge-doped tunnel junction

Nanotechnology, 2020-11, Vol.31 (46), p.465706-465706

2020

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Low defect InGaAs quantum well selectively grown by metal organic chemical vapor deposition on Si(100) 300 mm wafers for next generation non planar devices

Applied physics letters, 2014-06, Vol.104 (26)

2014

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Understanding and improving the low optical emission of InGaAs quantum wells grown on oxidized patterned (001) silicon substrate

Applied physics letters, 2018-05, Vol.112 (20)

2018

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High rejection bandpass optical filters based on sub-wavelength metal patch arrays

Optics express, 2011-08, Vol.19 (17), p.15720-15731

2011

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Impact of post-deposition anneal on ALD Al2O3/etched GaN interface for gate-first MOSc-HEMT

Power electronic devices and components, 2023-03, Vol.4, p.100033, Article 100033

2023

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Stabilization of the cubic phase of HfO2 by Y addition in films grown by metal organic chemical vapor deposition

Applied physics letters, 2006-07, Vol.89 (1)

2006

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Multilayer Structure in SeAsGeSi-based OTS for High Thermal Stability and Reliability Enhancement

ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference (ESSDERC), 2022, p.225-228

2022

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Lanthanum diffusion in the TiN/LaOx/HfSiO/SiO2/Si stack

Microelectronic engineering, 2011-07, Vol.88 (7), p.1349-1352

2011

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Influence of the Chemical Properties of the Substrate on Silicon Quantum Dot Nucleation

Journal of the Electrochemical Society, 2003-03, Vol.150 (3), p.G203

2003

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Water management on semiconductor surfaces

Microelectronic engineering, 2011-12, Vol.88 (12), p.3432-3436

2011

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Characteristics of atomic-layer-deposited thin HfxZr1−xO2 gate dielectrics

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2007-05, Vol.25 (3), p.845-852

2007

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Spatially correlated structural and optical characterization of a single InGaAs quantum well fin selectively grown on Si by microscopy and cathodoluminescence techniques

APL materials, 2016-05, Vol.4 (5), p.056102-056102-6

2016

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Attenuated total reflection spectroscopy for infrared analysis of thin layers on a semiconductor substrate

Journal of applied physics, 2002-04, Vol.91 (8), p.5029-5034

2002

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Impact of the TiN electrode deposition on the HfO2 band gap for advanced MOSFET gate stacks

Microelectronic engineering, 2011, Vol.88 (1), p.72-75

2011

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The reduction of the substitutional C content in annealed Si/SiGeC superlattices studied by dark-field electron holography

Semiconductor science and technology, 2011-12, Vol.26 (12), p.125010

2011

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Subwavelength optical absorber with an integrated photon sorter

Applied physics letters, 2012-03, Vol.100 (11), p.113305-113305-4

2012

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Moisture diffusion in plasma-enhanced chemical vapor deposition dielectrics characterized with three techniques under clean room conditions

Thin solid films, 2020-03, Vol.698, p.137874, Article 137874

2020

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Modification of porous ultra-low K dielectric by electron-beam curing

Microelectronics and reliability, 2007-04, Vol.47 (4), p.764-768

2007

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Growth mechanism and characterization of chemical oxide films produced in peroxide mixtures on Si(100) surfaces

Thin solid films, 2005-04, Vol.476 (1), p.51-58

2005

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Origins of nanoscale emission inhomogeneities of high content red emitting InGaN/InGaN quantum wells

Temperature driven structural evolution of Ge-rich GeSbTe alloys and role of N-doping

Spectroscopic study of nitrogen incorporation in Ge, Sb, and Te elemental systems: A step toward the understanding of nitrogen effect in phase-change materials

Polarized cathodoluminescence for strain measurement

Mapping of the electrostatic potentials in MOCVD and hybrid GaN tunnel junctions for InGaN/GaN blue emitting light emitting diodes by off-axis electron holography correlated with structural, chemical, and optoelectronic characterization

Hydrogen implantation-induced blistering in diamond: Toward diamond layer transfer by the Smart Cut™ technique

Multi-microscopy nanoscale characterization of the doping profile in a hybrid Mg/Ge-doped tunnel junction

Low defect InGaAs quantum well selectively grown by metal organic chemical vapor deposition on Si(100) 300 mm wafers for next generation non planar devices

Understanding and improving the low optical emission of InGaAs quantum wells grown on oxidized patterned (001) silicon substrate

High rejection bandpass optical filters based on sub-wavelength metal patch arrays

Impact of post-deposition anneal on ALD Al2O3/etched GaN interface for gate-first MOSc-HEMT

Stabilization of the cubic phase of HfO2 by Y addition in films grown by metal organic chemical vapor deposition

Multilayer Structure in SeAsGeSi-based OTS for High Thermal Stability and Reliability Enhancement

Lanthanum diffusion in the TiN/LaOx/HfSiO/SiO2/Si stack

Influence of the Chemical Properties of the Substrate on Silicon Quantum Dot Nucleation

Water management on semiconductor surfaces

Characteristics of atomic-layer-deposited thin HfxZr1−xO2 gate dielectrics

Spatially correlated structural and optical characterization of a single InGaAs quantum well fin selectively grown on Si by microscopy and cathodoluminescence techniques

Attenuated total reflection spectroscopy for infrared analysis of thin layers on a semiconductor substrate

Impact of the TiN electrode deposition on the HfO2 band gap for advanced MOSFET gate stacks

The reduction of the substitutional C content in annealed Si/SiGeC superlattices studied by dark-field electron holography

Subwavelength optical absorber with an integrated photon sorter

Moisture diffusion in plasma-enhanced chemical vapor deposition dielectrics characterized with three techniques under clean room conditions

Modification of porous ultra-low K dielectric by electron-beam curing

Growth mechanism and characterization of chemical oxide films produced in peroxide mixtures on Si(100) surfaces

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