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Effect of high-pressure oxygen annealing on negative bias illumination stress-induced instability of InGaZnO thin film transistors

Applied physics letters, 2011-03, Vol.98 (10), p.103509-103509-3

2011

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The role of NF-κB in breast cancer initiation, growth, metastasis, and resistance to chemotherapy

Biomedicine & pharmacotherapy, 2023-07, Vol.163, p.114822-114822, Article 114822

2023

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Influence of Fast Charging on Accuracy of Mobility in -InHfZnO Thin-Film Transistor

IEEE electron device letters, 2017-02, Vol.38 (2), p.203-206

2017

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The effect of moisture on the photon-enhanced negative bias thermal instability in Ga-In-Zn-O thin film transistors

Applied physics letters, 2009-12, Vol.95 (23), p.232106-232106-3

2009

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Performance Improvement of p-Channel Tin Monoxide Transistors With a Solution-Processed Zirconium Oxide Gate Dielectric

IEEE electron device letters, 2017-11, Vol.38 (11), p.1543-1546

2017

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Achieving High Field-Effect Mobility Exceeding 50 cm \(^}\) /Vs in In-Zn-Sn-O Thin-Film Transistors

IEEE electron device letters, 2014-08, Vol.35 (8), p.853-855

2014

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Metal Electrode/High- k Dielectric Gate-Stack Technology for Power Management

IEEE transactions on electron devices, 2008-01, Vol.55 (1), p.8-20

2008

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Fast transient charging at the graphene/SiO2 interface causing hysteretic device characteristics

Applied physics letters, 2011-05, Vol.98 (18)

2011

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A Comprehensive Study on the Effect of TiN Top and Bottom Electrodes on Atomic Layer Deposited Ferroelectric Hf0.5Zr0.5O2 Thin Films

Materials, 2020-07, Vol.13 (13), p.2968

2020

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Achieving High Field-Effect Mobility Exceeding 50 cm2/Vs in In-Zn-Sn-O Thin-Film Transistors

IEEE electron device letters, 2014, Vol.35 (8), p.853-855

2014

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The impact of gate dielectric materials on the light-induced bias instability in Hf-In-Zn-O thin film transistor

Applied physics letters, 2010-11, Vol.97 (18), p.183503-183503-3

2010

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Electrical Characterization of the Self-Heating Effect in Oxide Semiconductor Thin-Film Transistors Using Pulse-Based Measurements

IEEE transactions on electron devices, 2018-06, Vol.65 (6), p.2492-2497

2018

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Solution-processable LaZrOx/SiO2 gate dielectric at low temperature of 180 °C for high-performance metal oxide field-effect transistors

ACS applied materials & interfaces, 2014-11, Vol.6 (21), p.18693-18703

2014

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Improvement in Photo-Bias Stability of High-Mobility Indium Zinc Oxide Thin-Film Transistors by Oxygen High-Pressure Annealing

IEEE electron device letters, 2013-07, Vol.34 (7), p.894-896

2013

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A Neuromorphic Device Implemented on a Salmon‐DNA Electrolyte and its Application to Artificial Neural Networks

Advanced science, 2019-09, Vol.6 (17), p.1901265-n/a

2019

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Improvement in the device performance of tin-doped indium oxide transistor by oxygen high pressure annealing at 150°C

Applied physics letters, 2012-04, Vol.100 (16), p.162108-162108-4

2012

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Low Temperature Thermal Atomic Layer Deposition of Aluminum Nitride Using Hydrazine as the Nitrogen Source

Materials, 2020-07, Vol.13 (15), p.3387

2020

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Formation techniques for upper active channel in monolithic 3D integration: an overview

Nano convergence, 2024-01, Vol.11 (1), p.5-15, Article 5

2024

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Improvement in both mobility and bias stability of ZnSnO transistors by inserting ultra-thin InSnO layer at the gate insulator/channel interface

Applied physics letters, 2011-09, Vol.99 (12), p.122102-122102-3

2011

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A Novel Combinatorial Approach to the Ferroelectric Properties in HfxZr1−xO2 Deposited by Atomic Layer Deposition

Physica status solidi. PSS-RRL. Rapid research letters, 2021-05, Vol.15 (5), p.n/a

2021

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Non-Alloyed Ohmic Contacts on GaAs Using Metal-Interlayer-Semiconductor Structure With SF6 Plasma Treatment

IEEE electron device letters, 2016-04, Vol.37 (4), p.373-376

2016

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Impact of Pt grain size on ferroelectric properties of zirconium hafnium oxide by chemical solution deposition

Nano convergence, 2022-10, Vol.9 (1), p.45-45, Article 45

2022

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The Effect of Density-of-State on the Temperature and Gate Bias-Induced Instability of InGaZnO Thin Film Transistors

Journal of the Electrochemical Society, 2010, Vol.157 (11), p.H983

2010

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Improving Electrical Stability of a-InGaZnO Thin-Film Transistors with Thermally Deposited Self-Assembled Monolayers

Electronic Materials Letters, 2020, 16(5), , pp.451-456

2020

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Double-gate thin film transistor with suspended-gate applicable to tactile force sensor

Nano Convergence, 2020, 7(31), , pp.1-6

2020

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Effect of high-pressure oxygen annealing on negative bias illumination stress-induced instability of InGaZnO thin film transistors

The role of NF-κB in breast cancer initiation, growth, metastasis, and resistance to chemotherapy

Influence of Fast Charging on Accuracy of Mobility in -InHfZnO Thin-Film Transistor

The effect of moisture on the photon-enhanced negative bias thermal instability in Ga-In-Zn-O thin film transistors

Performance Improvement of p-Channel Tin Monoxide Transistors With a Solution-Processed Zirconium Oxide Gate Dielectric

Achieving High Field-Effect Mobility Exceeding 50 cm \(^}\) /Vs in In-Zn-Sn-O Thin-Film Transistors

Metal Electrode/High- k Dielectric Gate-Stack Technology for Power Management

Fast transient charging at the graphene/SiO2 interface causing hysteretic device characteristics

A Comprehensive Study on the Effect of TiN Top and Bottom Electrodes on Atomic Layer Deposited Ferroelectric Hf0.5Zr0.5O2 Thin Films

Achieving High Field-Effect Mobility Exceeding 50 cm2/Vs in In-Zn-Sn-O Thin-Film Transistors

The impact of gate dielectric materials on the light-induced bias instability in Hf-In-Zn-O thin film transistor

Electrical Characterization of the Self-Heating Effect in Oxide Semiconductor Thin-Film Transistors Using Pulse-Based Measurements

Solution-processable LaZrOx/SiO2 gate dielectric at low temperature of 180 °C for high-performance metal oxide field-effect transistors

Improvement in Photo-Bias Stability of High-Mobility Indium Zinc Oxide Thin-Film Transistors by Oxygen High-Pressure Annealing

A Neuromorphic Device Implemented on a Salmon‐DNA Electrolyte and its Application to Artificial Neural Networks

Improvement in the device performance of tin-doped indium oxide transistor by oxygen high pressure annealing at 150°C

Low Temperature Thermal Atomic Layer Deposition of Aluminum Nitride Using Hydrazine as the Nitrogen Source

Formation techniques for upper active channel in monolithic 3D integration: an overview

Improvement in both mobility and bias stability of ZnSnO transistors by inserting ultra-thin InSnO layer at the gate insulator/channel interface

A Novel Combinatorial Approach to the Ferroelectric Properties in HfxZr1−xO2 Deposited by Atomic Layer Deposition

Non-Alloyed Ohmic Contacts on GaAs Using Metal-Interlayer-Semiconductor Structure With SF6 Plasma Treatment

Impact of Pt grain size on ferroelectric properties of zirconium hafnium oxide by chemical solution deposition

The Effect of Density-of-State on the Temperature and Gate Bias-Induced Instability of InGaZnO Thin Film Transistors

Improving Electrical Stability of a-InGaZnO Thin-Film Transistors with Thermally Deposited Self-Assembled Monolayers

Double-gate thin film transistor with suspended-gate applicable to tactile force sensor

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