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Vacancy-impurity complexes and diffusion of Ga and Sn in intrinsic and p-doped germanium

Applied physics letters, 2007-08, Vol.91 (9)

2007

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Diffusion properties of Ga in Si1−xGex alloys

Journal of applied physics, 2008-12, Vol.104 (12)

2008

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Linear Energy Transfer of Heavy Ions in Silicon

IEEE transactions on nuclear science, 2007-08, Vol.54 (4), p.1158-1162

2007

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Elastic interactions and diffusion of Sn in Si1−xGex systems

Applied physics letters, 2007-04, Vol.90 (18)

2007

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Experimental Linear Energy Transfer of Heavy Ions in Silicon for RADEF Cocktail Species

IEEE transactions on nuclear science, 2009-08, Vol.56 (4), p.2242-2246

2009

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Particle detectors made of high-resistivity Czochralski silicon

Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 2005-04, Vol.541 (1), p.202-207

2005

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Radiation hardness of Czochralski silicon studied by 10-MeV and 20-MeV protons

IEEE transactions on nuclear science, 2003-12, Vol.50 (6), p.1942-1946

2003

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Migration kinetics of ion-implanted beryllium in glassy carbon

Diamond and related materials, 2008-12, Vol.17 (12), p.1991-1993

2008

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The effect of oxygenation on the radiation hardness of silicon studied by surface photovoltage method

IEEE transactions on nuclear science, 2002-12, Vol.49 (6), p.2910-2913

2002

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Si self-diffusion in cubic B20-structured FeSi

Europhysics letters, 2008-06, Vol.82 (6), p.66005-p1-66005-p3

2008

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Fluence effect on ion-implanted As diffusion in relaxed SiGe

Europhysics letters, 2005-11, Vol.72 (3), p.416-422

2005

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Self-diffusion of silicon in molybdenum disilicide

Philosophical magazine (Abingdon, England), 2004-03, Vol.84 (8), p.737-756

2004

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Results of proton irradiations of large area strip detectors made on high-resistivity Czochralski silicon

Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 2004-09, Vol.530 (1), p.117-121

2004

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Particle Detectors made of High Resistivity Czochralski Grown Silicon

Physica scripta, 2004-01, Vol.2004, p.88-90

2004

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Upgrades for the RADEF Facility

2007 IEEE Radiation Effects Data Workshop, 2007, p.38-41

2007

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Mobility determination of lead isotopes in glass for retrospective radon measurements

Radiation protection dosimetry, 2008, Vol.131 (2), p.212-216

2008

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Diffusion properties of Ga in Si 1 − x Ge x alloys

Journal of applied physics, 2008-12, Vol.104 (12), p.123510-123510-3

2008

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Diffusion of beryllium in Ge and Si-Ge alloys

Journal of applied physics, 2008-04, Vol.103 (7), p.073513-073513-4

2008

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Vacancy-impurity complexes and diffusion of Ga and Sn in intrinsicand p -doped germanium

Applied physics letters, 2007-08, Vol.91 (9), p.091922-091922-3

2007

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Elastic interactions and diffusion of Sn in Si 1 − x Ge x systems

Applied physics letters, 2007-05, Vol.90 (18), p.181922-181922-3

2007

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Czochralski silicon detectors irradiated with 24 GeV / c and 10 MeV protons

Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 2006-11, Vol.568 (1), p.83-88

2006

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Radiation hardness of Czochralski silicon, Float Zone silicon and oxygenated Float Zone silicon studied by low energy protons

Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 2004-02, Vol.518 (1), p.346-348

2004

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