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Source of the yellow luminescence band in GaN grown by gas-source molecular beam epitaxy and the green luminescence band in single crystal ZnO

Solid state communications, 1998-04, Vol.106 (10), p.701-704

1998

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Role of near-surface states in ohmic-Schottky conversion of Au contacts to ZnO

Applied physics letters, 2005-07, Vol.87 (1), p.012102-012102-3

2005

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Optical properties of ZnO crystals containing internal strains

Journal of luminescence, 1999-08, Vol.82 (2), p.173-176

1999

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Electrical properties of bulk ZnO

Solid state communications, 1998-02, Vol.105 (6), p.399-401

1998

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Optically pumped ultraviolet lasing from ZnO

Solid state communications, 1996, Vol.99 (12), p.873-875

1996

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Defect Donor and Acceptor in GaN

Physical review letters, 1997-09, Vol.79 (12), p.2273-2276

1997

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Similarities in the bandedge and deep-centre photoluminescence mechanisms of ZnO and GaN

Solid state communications, 1997-03, Vol.101 (9), p.643-646

1997

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Point defect characterization of GaN and ZnO

Materials science & engineering. B, Solid-state materials for advanced technology, 1999-12, Vol.66 (1), p.30-32

1999

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Optical properties of GaN grown on ZnO by reactive molecular beam epitaxy

Applied physics letters, 1997-01, Vol.70 (4), p.467-469

1997

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Identification of an ionized-donor-bound-exciton transition in GaN

Solid state communications, 1997-09, Vol.103 (9), p.533-535

1997

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Phonon replicas associated with donor–bound–excitons in GaN

Solid state communications, 1998-08, Vol.108 (1), p.49-52

1998

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Observation of shallow residual donors in high purity epitaxial GaAs by means of photoluminescence spectroscopy

Solid state communications, 1981-06, Vol.38 (11), p.1053-1056

1981

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Annealing studies on GaN hydride vapor phase epitaxial layers

Solid state communications, 1999-03, Vol.109 (11), p.683-686

1999

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Determination of defect pair orientation in ZnO

Solid state communications, 1999-01, Vol.109 (6), p.419-422

1999

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Effect of high-temperature annealing on electrical and optical properties of undoped semi-insulating GaAs

Journal of applied physics, 1998-01, Vol.83 (1), p.260-265

1998

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Electrical and optical properties of semi-insulating GaN

Materials science & engineering. B, Solid-state materials for advanced technology, 1997-02, Vol.44 (1), p.423-426

1997

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Ground and excited states associated with donor bound-excitons in high purity GaAs

Solid state communications, 1996, Vol.97 (1), p.59-61

1996

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Crystal field splitting of defect pair spectra in GaAs

Solid state communications, 1997-04, Vol.102 (1), p.47-51

1997

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Mechanically-excited emission in cadmium sulfide

The Journal of physics and chemistry of solids, 1960-01, Vol.13 (3), p.251-256

1960

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Using anesthetic localization to diagnose oral and dental pain

The Journal of the American Dental Association (1939), 1995-05, Vol.126 (5), p.633-641

1995

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Desorption mass spectrometric control of composition during MBE growth of AlGaAs

Journal of crystal growth, 1993-02, Vol.127 (1), p.523-527

1993

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Photoluminescence study of symmetric, coupled, double In xGa 1−xAs-GaAs quantum well structures

Solid state communications, 1993, Vol.86 (5), p.339-345

1993

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Photoluminescence study of symmetric, coupled, double InxGa1-xAs-GaAs quantum well structures

Solid state communications, 1993-05, Vol.86 (5), p.339-345

1993

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Bound Excitons in Quantum Wells

Materials science forum, 1991-01, Vol.65-66, p.91-98

1991

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Shallow impurity levels in AlGaAs/GaAs semiconductor quantum wells

Solid-state electronics, 1986-02, Vol.29 (2), p.205-214

1986

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Source of the yellow luminescence band in GaN grown by gas-source molecular beam epitaxy and the green luminescence band in single crystal ZnO

Role of near-surface states in ohmic-Schottky conversion of Au contacts to ZnO

Optical properties of ZnO crystals containing internal strains

Electrical properties of bulk ZnO

Optically pumped ultraviolet lasing from ZnO

Defect Donor and Acceptor in GaN

Similarities in the bandedge and deep-centre photoluminescence mechanisms of ZnO and GaN

Point defect characterization of GaN and ZnO

Optical properties of GaN grown on ZnO by reactive molecular beam epitaxy

Identification of an ionized-donor-bound-exciton transition in GaN

Phonon replicas associated with donor–bound–excitons in GaN

Observation of shallow residual donors in high purity epitaxial GaAs by means of photoluminescence spectroscopy

Annealing studies on GaN hydride vapor phase epitaxial layers

Determination of defect pair orientation in ZnO

Effect of high-temperature annealing on electrical and optical properties of undoped semi-insulating GaAs

Electrical and optical properties of semi-insulating GaN

Ground and excited states associated with donor bound-excitons in high purity GaAs

Crystal field splitting of defect pair spectra in GaAs

Mechanically-excited emission in cadmium sulfide

Using anesthetic localization to diagnose oral and dental pain

Desorption mass spectrometric control of composition during MBE growth of AlGaAs

Photoluminescence study of symmetric, coupled, double In xGa 1−xAs-GaAs quantum well structures

Photoluminescence study of symmetric, coupled, double InxGa1-xAs-GaAs quantum well structures

Bound Excitons in Quantum Wells

Shallow impurity levels in AlGaAs/GaAs semiconductor quantum wells

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