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Time-resolved photoluminescence from defects in n -type GaN

Journal of applied physics, 2014-03, Vol.115 (10)

Reshchikov, M. A.

2014

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Carbon defects as sources of the green and yellow luminescence bands in undoped GaN

Physical review. B, Condensed matter and materials physics, 2014-12, Vol.90 (23), Article 235203

2014

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Shallow and Deep States of Beryllium Acceptor in GaN: Why Photoluminescence Experiments Do Not Reveal Small Polarons for Defects in Semiconductors

Physical review letters, 2021-01, Vol.126 (2), p.027401-027401, Article 027401

2021

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Two yellow luminescence bands in undoped GaN

Scientific reports, 2018-05, Vol.8 (1), p.8091-11, Article 8091

2018

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Evaluation of the concentration of point defects in GaN

Scientific reports, 2017-08, Vol.7 (1), p.9297-11, Article 9297

2017

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Fine structure of the red luminescence band in undoped GaN

Applied physics letters, 2014-01, Vol.104 (3)

2014

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A comprehensive review of ZnO materials and devices

Journal of applied physics, 2005-08, Vol.98 (4), p.041301-041301-103

2005

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Comment on "Determination of the Nitrogen Vacancy as a Shallow Compensating Center in GaN Doped with Divalent Metals"

Physical review letters, 2015-07, Vol.115 (2), p.029701-029701, Article 029701

2015

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Yellow luminescence of gallium nitride generated by carbon defect complexes

Physical review letters, 2013-02, Vol.110 (8), p.087404-087404, Article 087404

2013

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Koopmans’ tuning of HSE hybrid density functional for calculations of defects in semiconductors: A case study of carbon acceptor in GaN

Journal of applied physics, 2020-04, Vol.127 (15)

2020

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Hydrogen-carbon complexes and the blue luminescence band in GaN

Journal of applied physics, 2016-01, Vol.119 (3)

2016

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Defect-related photoluminescence from ammono GaN

Journal of applied physics, 2021-03, Vol.129 (9)

2021

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Thermal quenching of the yellow luminescence in GaN

Journal of applied physics, 2018-04, Vol.123 (16)

2018

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Green luminescence in Mg-doped GaN

Physical review. B, Condensed matter and materials physics, 2014-07, Vol.90 (3), Article 035207

2014

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Blue luminescence and Zn acceptor in GaN

Physical review. B, Condensed matter and materials physics, 2013-09, Vol.88 (11), Article 115204

2013

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Surface photovoltage in undoped n -type GaN

Journal of applied physics, 2010-06, Vol.107 (11), p.113535-113535-13

2010

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Photoluminescence from CdGa and HgGa acceptors in GaN

Journal of applied physics, 2024-04, Vol.135 (15)

2024

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Magnesium acceptor in gallium nitride. I. Photoluminescence from Mg-doped GaN

Physical review. B, 2018-05, Vol.97 (20)

2018

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The effect of annealing on photoluminescence from defects in ammonothermal GaN

Journal of applied physics, 2022-01, Vol.131 (3)

2022

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Temperature-dependent Kelvin probe studies on GaN from 80 to 600 K

Physica status solidi. C, 2014-02, Vol.11 (3-4), p.726-729

2014

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Optically generated giant traps in high-purity GaN

Physical review. B, 2016-02, Vol.93 (8), Article 081202

2016

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Determination of the concentration of impurities in GaN from photoluminescence and secondary-ion mass spectrometry

Scientific reports, 2020-02, Vol.10 (1), p.2223-2223, Article 2223

2020

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Luminescence from defects in GaN

Physica. B, Condensed matter, 2006-04, Vol.376, p.428-431

2006

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Thermal annealing of GaN implanted with Be

Journal of applied physics, 2022-03, Vol.131 (12)

2022

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Highly conductive and optically transparent GZO films grown under metal-rich conditions by plasma assisted MBE

Physica status solidi. PSS-RRL. Rapid research letters, 2010-04, Vol.4 (3-4), p.70-72

2010

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Time-resolved photoluminescence from defects in n -type GaN

Carbon defects as sources of the green and yellow luminescence bands in undoped GaN

Shallow and Deep States of Beryllium Acceptor in GaN: Why Photoluminescence Experiments Do Not Reveal Small Polarons for Defects in Semiconductors

Two yellow luminescence bands in undoped GaN

Evaluation of the concentration of point defects in GaN

Fine structure of the red luminescence band in undoped GaN

A comprehensive review of ZnO materials and devices

Comment on "Determination of the Nitrogen Vacancy as a Shallow Compensating Center in GaN Doped with Divalent Metals"

Yellow luminescence of gallium nitride generated by carbon defect complexes

Koopmans’ tuning of HSE hybrid density functional for calculations of defects in semiconductors: A case study of carbon acceptor in GaN

Hydrogen-carbon complexes and the blue luminescence band in GaN

Defect-related photoluminescence from ammono GaN

Thermal quenching of the yellow luminescence in GaN

Green luminescence in Mg-doped GaN

Blue luminescence and Zn acceptor in GaN

Surface photovoltage in undoped n -type GaN

Photoluminescence from CdGa and HgGa acceptors in GaN

Magnesium acceptor in gallium nitride. I. Photoluminescence from Mg-doped GaN

The effect of annealing on photoluminescence from defects in ammonothermal GaN

Temperature-dependent Kelvin probe studies on GaN from 80 to 600 K

Optically generated giant traps in high-purity GaN

Determination of the concentration of impurities in GaN from photoluminescence and secondary-ion mass spectrometry

Luminescence from defects in GaN

Thermal annealing of GaN implanted with Be

Highly conductive and optically transparent GZO films grown under metal-rich conditions by plasma assisted MBE

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