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Surface-Passivation Effects on the Performance of 4H-SiC BJTs

IEEE transactions on electron devices, 2011-01, Vol.58 (1), p.259-265

2011

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IEEE_Xplore

Design and Characterization of Newly Developed 10 kV 2 A SiC p-i-n Diode for Soft-Switching Industrial Power Supply

IEEE transactions on electron devices, 2015-02, Vol.62 (2), p.366-373

2015

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Effect of neutron irradiation on epitaxial 4H-SiC PiN UV-photodiodes

2016 European Conference on Silicon Carbide & Related Materials (ECSCRM), 2017-05, Vol.897, p.1-1

2017

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30 kV Pulse Diode Stack Based on 4H-SiC

Materials science forum, 2018-06, Vol.924, p.841-844

2018

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Effect of Phosphorus Implantation Prior to Oxidation on Electrical Properties of Thermally Grown SiO2/4H-SiC MOS Structures

Materials science forum, 2015, Vol.806, p.133-138

2015

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Design optimization of a high temperature 1.2 kV 4H-SiC buried grid JBS rectifier

2016 European Conference on Silicon Carbide & Related Materials (ECSCRM), 2017, Vol.897, p.1-1

2017

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Temperature-Dependent Characteristics of 4H-SiC Buried Grid JBS Diodes

Materials science forum, 2015-06, Vol.821-823, p.600-603

2015

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Large area scanning probe microscope in ultra-high vacuum demonstrated for electrostatic force measurements on high-voltage devices

Beilstein journal of nanotechnology, 2015, Vol.6 (1), p.2485-2497

2015

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Two-Dimensional Carrier Profiling on Lightly Doped n-Type 4H-SiC Epitaxially Grown Layers

Materials science forum, 2015-06, Vol.821-823, p.269-272

2015

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Effect of an intermediate graphite layer on the electronic properties of metal/SiC contacts

Physica Status Solidi (b), 2008-07, Vol.245 (7), p.1369-1377

2008

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Drain-Current Deep Level Transient Spectroscopy Investigation on Epitaxial Graphene/6H-SiC Field Effect Transistors

Materials science forum, 2014, Vol.778-780, p.436-439

2014

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Nanoscale characterization of electrical transport at metal/3C-SiC interfaces

Nanoscale research letters, 2011-02, Vol.6 (1), p.120-120, Article 120

2011

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SiC Epi-Channel Lateral MOSFETs

Materials science forum, 2014, Vol.778-780, p.927-930

2014

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Reduction of Density of 4H-SiC / SiO2 Interface Traps by Pre-Oxidation Phosphorus Implantation

Materials science forum, 2014, Vol.778-780, p.575-578

2014

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Tailoring the 4H-SiC/SiO2 MOS-interface for SiC-based power switches

Japanese Journal of Applied Physics, 2016-08, Vol.55 (8S2)

2016

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Tailoring the graphene/silicon carbide interface for monolithic wafer-scale electronics

Nature communications, 2012-07, Vol.3 (1), p.957-957, Article 957

2012

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Isotopic Enriched and Natural SiC Junction Barrier Schottky Diodes Under Heavy Ion Irradiation

IEEE transactions on nuclear science, 2022-07, Vol.69 (7), p.1675-1682

2022

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Optimization of Poly-silicon Process for 3C-SiC Based MOS Devices

MRS proceedings, 2010-01, Vol.1246 (1), Article 1246-B06-04

2010

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Reliable Method for Eliminating Stacking Fault on 3C-SiC(001)

Materials science forum, 2012-05, Vol.717-720, p.173-176

2012

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Lifetime Investigations of 4H-SiC PiN Power Diodes

Materials science forum, 2009-01, Vol.615-617, p.699-702

2009

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Growth and high temperature performance of semi-insulating silicon carbide

Diamond and related materials, 2000-04, Vol.9 (3-6), p.480-482

Reshanov, Sergey A

2000

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Localized Lifetime Control of 10 kV 4H-SiC PiN Diodes by MeV Proton Implantation

Materials science forum, 2022, Vol.1062, p.442-446

2022

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Experimental Evaluation of Different Passivation Layers on the Performance of 3kV 4H-SiC BJTs

Materials science forum, 2010-01, Vol.645-648 (Part 1-2), p.661-664

2010

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High-Voltage Ultra-Fast Pulse Diode Stack Based on 4H-SiC

Materials Science Forum, 2016-05, Vol.858, p.786-789

2016

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Junction Barrier Schottky (JBS) Rectifier Interface Engineering Facilitated by Two-Dimensional (2D) Dopant Imaging

Materials Science Forum, 2016-05, Vol.858, p.497-500

2016

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Surface-Passivation Effects on the Performance of 4H-SiC BJTs

Design and Characterization of Newly Developed 10 kV 2 A SiC p-i-n Diode for Soft-Switching Industrial Power Supply

Effect of neutron irradiation on epitaxial 4H-SiC PiN UV-photodiodes

30 kV Pulse Diode Stack Based on 4H-SiC

Effect of Phosphorus Implantation Prior to Oxidation on Electrical Properties of Thermally Grown SiO2/4H-SiC MOS Structures

Design optimization of a high temperature 1.2 kV 4H-SiC buried grid JBS rectifier

Temperature-Dependent Characteristics of 4H-SiC Buried Grid JBS Diodes

Large area scanning probe microscope in ultra-high vacuum demonstrated for electrostatic force measurements on high-voltage devices

Two-Dimensional Carrier Profiling on Lightly Doped n-Type 4H-SiC Epitaxially Grown Layers

Effect of an intermediate graphite layer on the electronic properties of metal/SiC contacts

Drain-Current Deep Level Transient Spectroscopy Investigation on Epitaxial Graphene/6H-SiC Field Effect Transistors

Nanoscale characterization of electrical transport at metal/3C-SiC interfaces

SiC Epi-Channel Lateral MOSFETs

Reduction of Density of 4H-SiC / SiO2 Interface Traps by Pre-Oxidation Phosphorus Implantation

Tailoring the 4H-SiC/SiO2 MOS-interface for SiC-based power switches

Tailoring the graphene/silicon carbide interface for monolithic wafer-scale electronics

Isotopic Enriched and Natural SiC Junction Barrier Schottky Diodes Under Heavy Ion Irradiation

Optimization of Poly-silicon Process for 3C-SiC Based MOS Devices

Reliable Method for Eliminating Stacking Fault on 3C-SiC(001)

Lifetime Investigations of 4H-SiC PiN Power Diodes

Growth and high temperature performance of semi-insulating silicon carbide

Localized Lifetime Control of 10 kV 4H-SiC PiN Diodes by MeV Proton Implantation

Experimental Evaluation of Different Passivation Layers on the Performance of 3kV 4H-SiC BJTs

High-Voltage Ultra-Fast Pulse Diode Stack Based on 4H-SiC

Junction Barrier Schottky (JBS) Rectifier Interface Engineering Facilitated by Two-Dimensional (2D) Dopant Imaging

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