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Characterization and modeling of 2DEG mobility in AlGaN/AlN/GaN MIS-HEMT

Microelectronic engineering, 2019-07, Vol.215, p.110976, Article 110976

2019

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Low-Frequency Noises and DLTS Studies in HgCdTe MWIR Photodiodes

Journal of electronic materials, 2019-10, Vol.48 (10), p.6113-6117

2019

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Underestimation of measured self‐heating in nanowires by using gate resistance technique

Electronics letters, 2016-11, Vol.52 (23), p.1935-1937

2016

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Carbon-doped GeTe: A promising material for Phase-Change Memories

Solid-state electronics, 2011-11, Vol.65-66, p.197-204

2011

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DLTS study of extended defects in HgCdTe photodiodes

Journal of physics. Conference series, 2019-05, Vol.1190 (1), p.12012

2019

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Reliable gate stack and substrate parameter extraction based on C-V measurements for 14nm node FDSOI technology

Solid-state electronics, 2017-02, Vol.128, p.10-16

2017

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Accurate analysis of parasitic current overshoot during forming operation in RRAMs

Microelectronic engineering, 2011-07, Vol.88 (7), p.1129-1132

2011

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Evidence of grain-boundary versus interface diffusion in electromigration experiments in copper damascene interconnects

Journal of applied physics, 2003-01, Vol.93 (1), p.192-204

2003

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Carrier transport in HfO2/metal gate MOSFETs : Physical insight into critical parameters

IEEE transactions on electron devices, 2006-04, Vol.53 (4), p.759-768

2006

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Electrical analysis of mechanical stress induced by STI in short MOSFETs using externally applied stress

IEEE transactions on electron devices, 2004-08, Vol.51 (8), p.1254-1261

2004

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Reliability of ultra-thin buried oxides for multi-VT FDSOI technology

Solid-state electronics, 2014-07, Vol.97, p.8-13

2014

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Interface states characterization in heterojunction solar cells from CV– GV measurements and modeling

Microelectronic engineering, 2011-07, Vol.88 (7), p.1247-1250

2011

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Study of carrier transport in strained and unstrained SOI tri-gate and omega-gate silicon nanowire MOSFETs

Solid-state electronics, 2013-06, Vol.84, p.46-52

2013

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Sheet resistance measurement on AlGaN/GaN wafers and dispersion study

Microelectronic engineering, 2013-09, Vol.109, p.334-337

2013

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Electrical analysis of external mechanical stress effects in short channel MOSFETs on (0 0 1) silicon

Solid-state electronics, 2004-04, Vol.48 (4), p.561-566

2004

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Automatic full quantum analysis of CV measurements for bulk and SOI devices

Microelectronic engineering, 2011-12, Vol.88 (12), p.3404-3406

2011

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Defects Study in HgxCd1−xTe Infrared Photodetectors by Deep Level Transient Spectroscopy

Journal of electronic materials, 2014-05, Vol.43 (8), p.3065-3069

2014

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A study of N-induced traps due to a nitrided gate in high-κ/metal gate nMOSFETs and their impact on electron mobility

Solid-state electronics, 2011-11, Vol.65-66, p.139-145

2011

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Performance and reliability of advanced High-K/Metal gate stacks (Invited Paper)

Microelectronic engineering, 2009-07, Vol.86 (7), p.1609-1614

2009

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Impact of a laser pulse on HfO2-based RRAM cells reliability and integrity

2016 International Conference on Microelectronic Test Structures (ICMTS), 2016, p.152-156

2016

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Initial and PBTI-induced traps and charges in Hf-based oxides/TiN stacks

Microelectronics and reliability, 2007-04, Vol.47 (4), p.489-496

2007

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Understanding reversal effects of metallic aluminum introduced in HfSiON/TiN PMOSFETs

Microelectronic engineering, 2011-07, Vol.88 (7), p.1305-1308

2011

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A comprehensive study of magnetoresistance mobility in short channel transistors: Application to strained and unstrained silicon-on-insulator field-effect transistors

Journal of applied physics, 2009-04, Vol.105 (8)

2009

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Influence of device scaling on low-frequency noise in SOI tri-gate N- and p-type Si nanowire MOSFETs

2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC), 2013, p.300-303

2013

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Novel sheet resistance measurement on AlGaN/GaN HEMT wafer adapted from four-point probe technique

Proceedings of the 2015 International Conference on Microelectronic Test Structures, 2015, p.163-168

2015

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Characterization and modeling of 2DEG mobility in AlGaN/AlN/GaN MIS-HEMT

Low-Frequency Noises and DLTS Studies in HgCdTe MWIR Photodiodes

Underestimation of measured self‐heating in nanowires by using gate resistance technique

Carbon-doped GeTe: A promising material for Phase-Change Memories

DLTS study of extended defects in HgCdTe photodiodes

Reliable gate stack and substrate parameter extraction based on C-V measurements for 14nm node FDSOI technology

Accurate analysis of parasitic current overshoot during forming operation in RRAMs

Evidence of grain-boundary versus interface diffusion in electromigration experiments in copper damascene interconnects

Carrier transport in HfO2/metal gate MOSFETs : Physical insight into critical parameters

Electrical analysis of mechanical stress induced by STI in short MOSFETs using externally applied stress

Reliability of ultra-thin buried oxides for multi-VT FDSOI technology

Interface states characterization in heterojunction solar cells from CV– GV measurements and modeling

Study of carrier transport in strained and unstrained SOI tri-gate and omega-gate silicon nanowire MOSFETs

Sheet resistance measurement on AlGaN/GaN wafers and dispersion study

Electrical analysis of external mechanical stress effects in short channel MOSFETs on (0 0 1) silicon

Automatic full quantum analysis of CV measurements for bulk and SOI devices

Defects Study in HgxCd1−xTe Infrared Photodetectors by Deep Level Transient Spectroscopy

A study of N-induced traps due to a nitrided gate in high-κ/metal gate nMOSFETs and their impact on electron mobility

Performance and reliability of advanced High-K/Metal gate stacks (Invited Paper)

Impact of a laser pulse on HfO2-based RRAM cells reliability and integrity

Initial and PBTI-induced traps and charges in Hf-based oxides/TiN stacks

Understanding reversal effects of metallic aluminum introduced in HfSiON/TiN PMOSFETs

A comprehensive study of magnetoresistance mobility in short channel transistors: Application to strained and unstrained silicon-on-insulator field-effect transistors

Influence of device scaling on low-frequency noise in SOI tri-gate N- and p-type Si nanowire MOSFETs

Novel sheet resistance measurement on AlGaN/GaN HEMT wafer adapted from four-point probe technique

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