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An enhanced Fourier law derivable from the Boltzmann transport equation and a sample application in determining the mean-free path of nondiffusive phonon modes

Journal of applied physics, 2014-09, Vol.116 (9)

2014

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Analysis of the “3-Omega” method for substrates and thick films of anisotropic thermal conductivity

Journal of applied physics, 2012-08, Vol.112 (4)

2012

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The impact of commonly used approximations on the computation of the Seebeck coefficient and mobility of polar semiconductors

Applied physics letters, 2012-10, Vol.101 (17)

2012

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Semimetal/Semiconductor Nanocomposites for Thermoelectrics

Advanced materials (Weinheim), 2011-05, Vol.23 (20), p.2377-2383

2011

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A compact heat transfer model based on an enhanced Fourier law for analysis of frequency-domain thermoreflectance experiments

Applied physics letters, 2015-06, Vol.106 (26)

2015

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A Generalized Enhanced Fourier Law

Journal of heat transfer, 2017-03, Vol.139 (3)

2017

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A "2-omega" technique for measuring anisotropy of thermal conductivity

Review of scientific instruments, 2012-12, Vol.83 (12), p.124903-124903

2012

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On the solenoidal heat-flux in quasi-ballistic thermal conduction

Journal of applied physics, 2015-09, Vol.118 (12)

2015

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Rigorous calculation of the Seebeck coefficient and mobility of thermoelectric materials

Journal of applied physics, 2010-04, Vol.107 (8), p.083707-083707-10

2010

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Thermal Modeling of Resistive Switching Devices

IEEE transactions on electron devices, 2013-06, Vol.60 (6), p.1938-1943

2013

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An electrical probe of the phonon mean-free path spectrum

Scientific reports, 2016-09, Vol.6 (1), p.33571-33571, Article 33571

2016

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Measurement of the high-temperature Seebeck coefficient of thin films by means of an epitaxially regrown thermometric reference material

Review of scientific instruments, 2012-09, Vol.83 (9), p.093905-093905

2012

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Thermoelectric Transport in InGaAs with High Concentration of Rare-Earth TbAs Embedded Nanoparticles

Journal of electronic materials, 2012-06, Vol.41 (6), p.1820-1825

2012

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High-Temperature Thermoelectric Characterization of III–V Semiconductor Thin Films by Oxide Bonding

Journal of electronic materials, 2010-08, Vol.39 (8), p.1125-1132

2010

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The impact of commonly used approximations on the computation of the Seebeck coefficient and mobility of polar semiconductors

Applied physics letters, 2012-10, Vol.101 (17)

2012

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Analysis of the “3-Omega” method for substrates and thick films of anisotropic thermal conductivity

Journal of applied physics, 2012-08, Vol.112 (4)

2012

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6 Watt Segmented Power Generator Modules using Bi2Te3 and (InGaAs)1-x(InAlAs)x Elements Embedded with ErAs Nanoparticles

MRS proceedings, 2008, Vol.1129 (1)

2008

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A “2-omega” technique for measuring anisotropy of thermal conductivity

Review of scientific instruments, 2012-12, Vol.83 (12)

2012

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Measurement of the high-temperature Seebeck coefficient of thin films by means of an epitaxially regrown thermometric reference material

Review of scientific instruments, 2012-09, Vol.83 (9)

2012

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Thermoelectric transport in the coupled valence-band model

Journal of applied physics, 2011-02, Vol.109 (3), p.033704-033704-9

2011

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Semimetal/Semiconductor Nanocomposites for Thermoelectrics

Advanced materials (Weinheim), 2011-04, Vol.23 (20)

2011

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Incompatibility of standard III–V compound semiconductor processing techniques with terbium-doped InGaAs of high terbium concentration

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2012-05, Vol.30 (3)

2012

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Incompatibility of standard III–V compound semiconductor processing techniques with terbium-doped InGaAs of high terbium concentration

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2012-05, Vol.30 (3), p.031508-031508-6

2012

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Thermoelectric Transport in InGaAs with High Concentration of Rare-Earth TbAs Embedded Nanoparticles

Journal of electronic materials, 2012-04, Vol.41 (6)

2012

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Electrical transport, electrothermal transport, and effective electron mass in single-crystalline In sub(2)O sub(3) films

Physical review. B, Condensed matter and materials physics, 2013-08, Vol.88 (8)

2013

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An enhanced Fourier law derivable from the Boltzmann transport equation and a sample application in determining the mean-free path of nondiffusive phonon modes

Analysis of the “3-Omega” method for substrates and thick films of anisotropic thermal conductivity

The impact of commonly used approximations on the computation of the Seebeck coefficient and mobility of polar semiconductors

Semimetal/Semiconductor Nanocomposites for Thermoelectrics

A compact heat transfer model based on an enhanced Fourier law for analysis of frequency-domain thermoreflectance experiments

A Generalized Enhanced Fourier Law

A "2-omega" technique for measuring anisotropy of thermal conductivity

On the solenoidal heat-flux in quasi-ballistic thermal conduction

Rigorous calculation of the Seebeck coefficient and mobility of thermoelectric materials

Thermal Modeling of Resistive Switching Devices

An electrical probe of the phonon mean-free path spectrum

Measurement of the high-temperature Seebeck coefficient of thin films by means of an epitaxially regrown thermometric reference material

Thermoelectric Transport in InGaAs with High Concentration of Rare-Earth TbAs Embedded Nanoparticles

High-Temperature Thermoelectric Characterization of III–V Semiconductor Thin Films by Oxide Bonding

The impact of commonly used approximations on the computation of the Seebeck coefficient and mobility of polar semiconductors

Analysis of the “3-Omega” method for substrates and thick films of anisotropic thermal conductivity

6 Watt Segmented Power Generator Modules using Bi2Te3 and (InGaAs)1-x(InAlAs)x Elements Embedded with ErAs Nanoparticles

A “2-omega” technique for measuring anisotropy of thermal conductivity

Measurement of the high-temperature Seebeck coefficient of thin films by means of an epitaxially regrown thermometric reference material

Thermoelectric transport in the coupled valence-band model

Semimetal/Semiconductor Nanocomposites for Thermoelectrics

Incompatibility of standard III–V compound semiconductor processing techniques with terbium-doped InGaAs of high terbium concentration

Incompatibility of standard III–V compound semiconductor processing techniques with terbium-doped InGaAs of high terbium concentration

Thermoelectric Transport in InGaAs with High Concentration of Rare-Earth TbAs Embedded Nanoparticles

Electrical transport, electrothermal transport, and effective electron mass in single-crystalline In sub(2)O sub(3) films

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