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Surface-related drain current dispersion effects in AlGaN-GaN HEMTs

IEEE transactions on electron devices, 2004-10, Vol.51 (10), p.1554-1561

2004

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Factors controlling sediment and nutrient fluxes in a small microtidal salt marsh within the Venice Lagoon

The Science of the total environment, 2019-02, Vol.650 (Pt 2), p.1832-1845

2019

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A geometrically based criterion to avoid infimum gaps in optimal control

Journal of Differential Equations, 2020-11, Vol.269 (11), p.10107-10142

2020

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Degradation of AlGaN/GaN HEMT devices: Role of reverse-bias and hot electron stress

Microelectronic engineering, 2013-09, Vol.109, p.257-261

2013

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GaN RF HEMT Reliability: Impact of Device Processing on I-V Curve Stability and Current Collapse

2022 IEEE International Reliability Physics Symposium (IRPS), 2022, p.11B.4-1-11B.4-6

2022

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Humic acids contribution to sedimentary organic matter on a shallow continental shelf (northern Adriatic Sea)

Estuarine, coastal and shelf science, 2010-12, Vol.90 (2), p.103-110

2010

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Deep level effects and degradation of 0.15 μm RF AlGaN/GaN HEMTs with Mono-layer and Bi-layer AlGaN backbarrier

2022 IEEE International Reliability Physics Symposium (IRPS), 2022, p.P51-1-P51-6

2022

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Role of the AlGaN Cap Layer on the Trapping Behaviour of N-Polar GaN MISHEMTs

2021 IEEE International Reliability Physics Symposium (IRPS), 2021, p.1-2

2021

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Impact of mussel farming on sedimentary geochemical properties of a Northern Adriatic area influenced by freshwater inflows

Estuarine, coastal and shelf science, 2013-09, Vol.129, p.49-58

2013

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Origin of sedimentary organic matter in the north-western Adriatic Sea

Estuarine, coastal and shelf science, 2009-10, Vol.84 (4), p.573-583

2009

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Proton induced trapping effect on space compatible GaN HEMTs

Microelectronics and reliability, 2014-09, Vol.54 (9-10), p.2213-2216

2014

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Review on the degradation of GaN-based lateral power transistors

e-Prime, 2021, Vol.1, p.100018, Article 100018

2021

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Failure signatures on 0.25μm GaN HEMTs for high-power RF applications

Microelectronics and reliability, 2014-09, Vol.54 (9-10), p.2237-2241

2014

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Single- and double-heterostructure GaN-HEMTs devices for power switching applications

Microelectronics and reliability, 2012-09, Vol.52 (9-10), p.2426-2430

2012

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Comparison of the performances of an InAlN/GaN HEMT with a Mo/Au gate or a Ni/Pt/Au gate

Microelectronics and reliability, 2013-09, Vol.53 (9-11), p.1476-1480

2013

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Developments on DC/DC converters for the LHC experiment upgrades

Journal of instrumentation, 2014-02, Vol.9 (2), p.C02017-C02017

2014

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Characterization and analysis of trap-related effects in AlGaN–GaN HEMTs

Microelectronics and reliability, 2007-09, Vol.47 (9), p.1639-1642

2007

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Influence of gate-leakage current on drain current collapse of unpassivated GaN∕AlGaN∕GaN high electron mobility transistors

Applied physics letters, 2005-06, Vol.86 (25)

2005

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Unbounded Control, Infimum Gaps, and Higher Order Normality

SIAM journal on control and optimization, 2022-01, Vol.60 (3), p.1436-1462

2022

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Current Collapse and High-Electric-Field Reliability of Unpassivated GaN/AlGaN/GaN HEMTs

IEEE transactions on electron devices, 2006-12, Vol.53 (12), p.2932-2941

2006

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Charge trapping in 0.1 μm AlGaN/GaN RF HEMTs: Dependence on barrier properties, voltage and temperature

Microelectronics and reliability, 2021-11, Vol.126, p.114259, Article 114259

2021

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Asymptotic controllability and optimal control

Journal of Differential Equations, 2013-04, Vol.254 (7), p.2744-2763

2013

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Reliability comparison of AlGaN/GaN HEMTs with different carbon doping concentration

Microelectronics and reliability, 2019-09, Vol.100-101, p.113489, Article 113489

2019

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Novel approach of combined planar and cross-sectional defect analysis of stressed normally-on HEMT devices with leaky Schottky gates

Microelectronics and reliability, 2023-11, Vol.150, p.115096, Article 115096

2023

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Impact of high-temperature operating lifetime tests on the stability of 0.15 μm AlGaN/GaN HEMTs: A temperature-dependent analysis

Microelectronics and reliability, 2023-11, Vol.150, p.115131, Article 115131

2023

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Surface-related drain current dispersion effects in AlGaN-GaN HEMTs

Factors controlling sediment and nutrient fluxes in a small microtidal salt marsh within the Venice Lagoon

A geometrically based criterion to avoid infimum gaps in optimal control

Degradation of AlGaN/GaN HEMT devices: Role of reverse-bias and hot electron stress

GaN RF HEMT Reliability: Impact of Device Processing on I-V Curve Stability and Current Collapse

Humic acids contribution to sedimentary organic matter on a shallow continental shelf (northern Adriatic Sea)

Deep level effects and degradation of 0.15 μm RF AlGaN/GaN HEMTs with Mono-layer and Bi-layer AlGaN backbarrier

Role of the AlGaN Cap Layer on the Trapping Behaviour of N-Polar GaN MISHEMTs

Impact of mussel farming on sedimentary geochemical properties of a Northern Adriatic area influenced by freshwater inflows

Origin of sedimentary organic matter in the north-western Adriatic Sea

Proton induced trapping effect on space compatible GaN HEMTs

Review on the degradation of GaN-based lateral power transistors

Failure signatures on 0.25μm GaN HEMTs for high-power RF applications

Single- and double-heterostructure GaN-HEMTs devices for power switching applications

Comparison of the performances of an InAlN/GaN HEMT with a Mo/Au gate or a Ni/Pt/Au gate

Developments on DC/DC converters for the LHC experiment upgrades

Characterization and analysis of trap-related effects in AlGaN–GaN HEMTs

Influence of gate-leakage current on drain current collapse of unpassivated GaN∕AlGaN∕GaN high electron mobility transistors

Unbounded Control, Infimum Gaps, and Higher Order Normality

Current Collapse and High-Electric-Field Reliability of Unpassivated GaN/AlGaN/GaN HEMTs

Charge trapping in 0.1 μm AlGaN/GaN RF HEMTs: Dependence on barrier properties, voltage and temperature

Asymptotic controllability and optimal control

Reliability comparison of AlGaN/GaN HEMTs with different carbon doping concentration

Novel approach of combined planar and cross-sectional defect analysis of stressed normally-on HEMT devices with leaky Schottky gates

Impact of high-temperature operating lifetime tests on the stability of 0.15 μm AlGaN/GaN HEMTs: A temperature-dependent analysis

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