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Terahertz oscillations in gallium nitride quantum-well channels predicted by hot-electron noise temperature behavior at microwave frequency

Journal of applied physics, 2020-08, Vol.128 (5)

2020

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Hot-electron energy relaxation time in Ga-doped ZnO films

Journal of applied physics, 2015-02, Vol.117 (6)

2015

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Electron drift velocity in wurtzite ZnO at high electric fields: Experiment and simulation

Journal of applied physics, 2019-11, Vol.126 (18)

2019

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Electron drift velocity in lattice-matched AlInN/AlN/GaN channel at high electric fields

Journal of applied physics, 2009-10, Vol.106 (7), p.073708-073708-5

2009

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Hot-phonon lifetime in Al0.23Ga0.77N/GaN channels

Semiconductor science and technology, 2014-04, Vol.29 (4)

2014

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Plasmon-enhanced heat dissipation in GaN-based two-dimensional channels

Applied physics letters, 2009-11, Vol.95 (19), p.192102-192102-3

2009

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Electron drift velocity in AlGaN/GaN channel at high electric fields

Applied physics letters, 2003-11, Vol.83 (19), p.4038-4040

2003

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Ultrafast decay of hot phonons in an AlGaN/AlN/AlGaN/GaN camelback channel

Journal of applied physics, 2011-11, Vol.110 (10), p.104504-104504-6

2011

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Camelback channel for fast decay of LO phonons in GaN heterostructure field-effect transistor at high electron density

Applied physics letters, 2011-07, Vol.99 (4), p.043501-043501-3

2011

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High-field electron transport in doped ZnO

Materials research express, 2017-06, Vol.4 (6), p.66301

2017

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Monte Carlo simulation of hot-phonon and degeneracy effects in the AlGaN/GaN two-dimensional electron gas channel

Semiconductor science and technology, 2003-02, Vol.18 (2), p.118-123

2003

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Impact Ionization Noise in SiGe HBTs: Comparison of Device and Compact Modeling With Experimental Results

IEEE transactions on electron devices, 2009-02, Vol.56 (2), p.328-336

2009

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IEEE_Xplore

Hot phonons in Si-doped GaN

Applied physics letters, 2006-11, Vol.89 (20), p.202117-202117-3

2006

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Monte Carlo simulation of hot-phonon effects in a biased AlGaN/GaN channel

Semiconductor science and technology, 2004-04, Vol.19 (4), p.S424-S426

2004

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Monte Carlo evaluation of an analytical model for nonequilibrium-phonon-induced electron velocity saturation in GaN

Semiconductor science and technology, 2007-08, Vol.22 (8), p.875-879

2007

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Noise modeling of advanced technology high speed SiGe HBTs

2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2010, p.169-172

2010

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IEEE_Xplore

Hot-electron energy relaxation time in AlGaN/GaN

Semiconductor science and technology, 2002-03, Vol.17 (3), p.L9-L14

2002

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Strain dependent electron drift velocity in Al1-xInxN/AlN/GaN

Physica status solidi. C, 2009-12, Vol.6 (12), p.2635-2637

2009

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Comparative analysis of hot-electron transport in AlGaN/GaN and AlGaN/AlN/GaN 2DEG channels

Physica status solidi. A, Applications and materials science, 2005-04, Vol.202 (5), p.808-811

2005

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Systematic Compact Modeling of Correlated Noise in Bipolar Transistors

IEEE transactions on microwave theory and techniques, 2012-11, Vol.60 (11), p.3403-3412

2012

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IEEE_Xplore

Iris abscess as an unusual presentation of endogenous endophthalmitis in a patient with bacterial endocarditis

American journal of ophthalmology, 2003-02, Vol.135 (2), p.228-229

2003

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Hot-phonon lifetime in Al 0.23 Ga 0.77 N/GaN channels

Semiconductor science and technology, 2014-04, Vol.29 (4), p.45018

2014

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Hot-electron microwave noise and power dissipation in AlGaN/AlN/GaN channels for HEMTs

Physica status solidi. C, 2005-01, Vol.2 (7), p.2585-2588

2005

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Fast and Ultrafast Processes in AlGaN/GaN Channels

Physica status solidi. B. Basic research, 2002-12, Vol.234 (3), p.826-829

2002

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Hot-Electron Transport, Noise and Power Dissipation in GaN Channels at High Density of Electrons

Acta physica Polonica, A, 2008-03, Vol.113 (3), p.967-970

2008

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Terahertz oscillations in gallium nitride quantum-well channels predicted by hot-electron noise temperature behavior at microwave frequency

Hot-electron energy relaxation time in Ga-doped ZnO films

Electron drift velocity in wurtzite ZnO at high electric fields: Experiment and simulation

Electron drift velocity in lattice-matched AlInN/AlN/GaN channel at high electric fields

Hot-phonon lifetime in Al0.23Ga0.77N/GaN channels

Plasmon-enhanced heat dissipation in GaN-based two-dimensional channels

Electron drift velocity in AlGaN/GaN channel at high electric fields

Ultrafast decay of hot phonons in an AlGaN/AlN/AlGaN/GaN camelback channel

Camelback channel for fast decay of LO phonons in GaN heterostructure field-effect transistor at high electron density

High-field electron transport in doped ZnO

Monte Carlo simulation of hot-phonon and degeneracy effects in the AlGaN/GaN two-dimensional electron gas channel

Impact Ionization Noise in SiGe HBTs: Comparison of Device and Compact Modeling With Experimental Results

Hot phonons in Si-doped GaN

Monte Carlo simulation of hot-phonon effects in a biased AlGaN/GaN channel

Monte Carlo evaluation of an analytical model for nonequilibrium-phonon-induced electron velocity saturation in GaN

Noise modeling of advanced technology high speed SiGe HBTs

Hot-electron energy relaxation time in AlGaN/GaN

Strain dependent electron drift velocity in Al1-xInxN/AlN/GaN

Comparative analysis of hot-electron transport in AlGaN/GaN and AlGaN/AlN/GaN 2DEG channels

Systematic Compact Modeling of Correlated Noise in Bipolar Transistors

Iris abscess as an unusual presentation of endogenous endophthalmitis in a patient with bacterial endocarditis

Hot-phonon lifetime in Al 0.23 Ga 0.77 N/GaN channels

Hot-electron microwave noise and power dissipation in AlGaN/AlN/GaN channels for HEMTs

Fast and Ultrafast Processes in AlGaN/GaN Channels

Hot-Electron Transport, Noise and Power Dissipation in GaN Channels at High Density of Electrons

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