UB Paderborn / Katalog / Suche / in CDI

Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 2014-11, Vol.765, p.59-63

2014

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IBIC analysis of SiC detectors developed for fusion applications

Radiation physics and chemistry (Oxford, England : 1993), 2020-12, Vol.177, p.109100, Article 109100

2020

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Investigation of nitrogen enriched silicon for particle detectors

Journal of instrumentation, 2020-05, Vol.15 (5), p.P05006-P05006

2020

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Four-quadrant silicon and silicon carbide photodiodes for beam position monitor applications: electrical characterization and electron irradiation effects

Journal of instrumentation, 2018-01, Vol.13 (1), p.C01045-C01045

2018

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Gate induced floating body effects in TiN/SiON and TiN/HfO2 gate stack triple gate SOI nFinFETs

Solid-state electronics, 2007-09, Vol.51 (9), p.1201-1210

2007

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Impact of 7.5-MeV proton irradiation on front-back gate coupling effect in ultra thin gate oxide FD-SOI n-MOSFETs

IEEE transactions on nuclear science, 2004-12, Vol.51 (6), p.3795-3800

2004

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IEEE_Xplore

2 MeV electron irradiation effects on bulk and interface of atomic layer deposited high-k gate dielectrics on silicon

Thin solid films, 2013-05, Vol.534, p.482-487

2013

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High-energy proton irradiation effects on tunnelling MOS capacitors

Microelectronic engineering, 2004-04, Vol.72 (1), p.85-89

2004

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"Linear kink effect" induced by electron valence band tunneling in ultrathin gate oxide bulk and SOI MOSFETS

Impact of electrical stress on the electrical characteristics of 2 MeV electron irradiated metal-oxide-silicon capacitors with atomic layer deposited Al2O3, HfO2 and nanolaminated dielectrics

2 MeV electron irradiation effects on the electrical characteristics of MOS capacitors with ALD Al2O3 dielectrics of different thickness

Modeling the breakdown statistics of Al2O3/HfO2 nanolaminates grown by atomic-layer-deposition

Germanium doping for improved silicon substrates and devices

Charge trapping and electrical degradation in atomic layer deposited Al2O3 films

Study of irradiation induced changes of electrical and functional characteristics in Ge doped Si diodes

Comparative Analysis of MIS Capacitance Structures With High-k Dielectrics Under Gamma, ^ O and p Radiation

Comparison of electron irradiation effects on diodes fabricated on silicon and on germanium doped silicon substrates

Ultrathin four-quadrant silicon photodiodes for beam position and monitor applications: Characterization and radiation effects

Performance of neutron-irradiated 4H-silicon carbide diodes subjected to alpha radiation

Impact of boron diffusion on oxynitrided gate oxides in 4H-SiC metal-oxide-semiconductor field-effect transistors

Impact of silicon substrate germanium doping on diode characteristics and on thermal donor formation

Electrical stress on irradiated thin gate oxide partially depleted SOI nMOSFETs

Comparison of radiation hardness of P-in-N, N-in-N, and N-in-P silicon pad detectors

Thermal donor formation in direct-plasma hydrogenated n-type Czochralski silicon

Dose rate dependence of the back gate degradation in thin gate oxide PD-SOI MOSFETs by 2-MeV electron irradiation

Update on scribe–cleave–passivate (SCP) slim edge technology for silicon sensors: Automated processing and radiation resistance

IBIC analysis of SiC detectors developed for fusion applications

Investigation of nitrogen enriched silicon for particle detectors

Four-quadrant silicon and silicon carbide photodiodes for beam position monitor applications: electrical characterization and electron irradiation effects

Gate induced floating body effects in TiN/SiON and TiN/HfO2 gate stack triple gate SOI nFinFETs

Impact of 7.5-MeV proton irradiation on front-back gate coupling effect in ultra thin gate oxide FD-SOI n-MOSFETs

2 MeV electron irradiation effects on bulk and interface of atomic layer deposited high-k gate dielectrics on silicon

High-energy proton irradiation effects on tunnelling MOS capacitors

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