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Universality of trap-induced mobility fluctuations between 1/f noise and random telegraph noise in nanoscale FD-SOI MOSFETs

Applied physics letters, 2023-06, Vol.122 (23)

2023

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HfO2-Based OxRAM Devices as Synapses for Convolutional Neural Networks

IEEE transactions on electron devices, 2015-08, Vol.62 (8), p.2494-2501

2015

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Passivating Silicon Tunnel Diode for Perovskite on Silicon Nip Tandem Solar Cells

Energies (Basel), 2023-05, Vol.16 (11), p.4346

2023

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Tunable Morphology and Doping of ZnO Nanowires by Chemical Bath Deposition Using Aluminum Nitrate

Journal of physical chemistry. C, 2017-02, Vol.121 (6), p.3573-3583

2017

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Integration of LaMnO3+δ films on platinized silicon substrates for resistive switching applications by PI-MOCVD

Beilstein journal of nanotechnology, 2019-02, Vol.10 (1), p.389-398

2019

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Hydrogenation of sputtered ZnO:Al layers for double side poly-Si/SiOx solar cells

EPJ Photovoltaics, 2022, Vol.13, p.8

2022

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An Efficient Nonlocal Hot Electron Model Accounting for Electron-Electron Scattering

IEEE transactions on electron devices, 2012-04, Vol.59 (4), p.983-993

2012

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Probing hidden conduction mechanisms in diced silicon solar cells by low frequency noise analysis

Solar energy materials and solar cells, 2023-07, Vol.256, p.112344, Article 112344

2023

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Effects of the pH on the Formation and Doping Mechanisms of ZnO Nanowires Using Aluminum Nitrate and Ammonia

Inorganic chemistry, 2017-11, Vol.56 (21), p.13111-13122

2017

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Parasitic oscillation in the low-frequency noise characterization of solar cells

Solid-state electronics, 2022-08, Vol.194, p.108327, Article 108327

2022

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Enhanced statistical detection of random telegraph noise in frequency and time domain

Solid-state electronics, 2022-08, Vol.194, p.108320, Article 108320

2022

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Platinum redistribution in the Ni0.9Pt0.1/InP system: Impact on solid-state reaction and layer morphology

Materials science in semiconductor processing, 2021-06, Vol.128, p.105731, Article 105731

2021

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Integration, BEOL, and Thermal Stress Impact on CMOS-Compatible Titanium-Based Contacts for III-V Devices on a 300-mm Platform

IEEE transactions on electron devices, 2020-06, Vol.67 (6), p.2495-2502

2020

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Technological guidelines for the design of tandem III-V nanowire on Si solar cells from opto-electrical simulations

Solar energy materials and solar cells, 2017-12, Vol.172, p.314-323

2017

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Endurance Statistical Behavior of Resistive Memories Based on Experimental and Theoretical Investigation

IEEE transactions on electron devices, 2019-08, Vol.66 (8), p.3318-3325

2019

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Extraction of the gate capacitance coupling coefficient in floating gate non-volatile memories: Statistical study of the effect of mismatching between floating gate memory and reference transistor in dummy cell extraction methods

Solid-state electronics, 2007-04, Vol.51 (4), p.585-592

2007

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Selected extended papers from ULIS 2012 conference

Solid-state electronics, 2013, Vol.88

2013

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Ni(Pt)-based CMOS-compatible contacts on p-InGaAs for III–V photonic devices

Materials science in semiconductor processing, 2023-02, Vol.154, p.107199, Article 107199

2023

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Integration of the Ni/InP system on a 300 mm platform for III-V/Si hybrid lasers

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2020-01, Vol.38 (1)

2020

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Front SiON/TCO Stacks Development for Double-Side Poly-Si/SiOX Passivated Contacts Solar Cells

IEEE journal of photovoltaics, 2023-01, Vol.13 (1), p.33-39

2023

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Front SiON/TCO Stacks Development for Double-Side Poly-Si/SiO X Passivated Contacts Solar Cells

IEEE journal of photovoltaics, 2023-01, Vol.13 (1), p.33-39

2023

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Refined Conformal Mapping Model for MOSFET Parasitic Capacitances Based on Elliptic Integrals

IEEE transactions on electron devices, 2015-03, Vol.62 (3), p.972-979

2015

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Analytical relationship between subthreshold swing of thermionic and tunnelling currents

Electronics letters, 2014-11, Vol.50 (23), p.1745-1747

2014

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Using a mixed ionic electronic conductor to build an analog memristive device with neuromorphic programming capabilities

Journal of materials chemistry. C, Materials for optical and electronic devices, 2020, Vol.8 (2), p.464-472

2020

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Tuning Memristivity by Varying the Oxygen Content in a Mixed Ionic–Electronic Conductor

Advanced functional materials, 2020-04, Vol.30 (17), p.n/a

2020

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Universality of trap-induced mobility fluctuations between 1/f noise and random telegraph noise in nanoscale FD-SOI MOSFETs

HfO2-Based OxRAM Devices as Synapses for Convolutional Neural Networks

Passivating Silicon Tunnel Diode for Perovskite on Silicon Nip Tandem Solar Cells

Tunable Morphology and Doping of ZnO Nanowires by Chemical Bath Deposition Using Aluminum Nitrate

Integration of LaMnO3+δ films on platinized silicon substrates for resistive switching applications by PI-MOCVD

Hydrogenation of sputtered ZnO:Al layers for double side poly-Si/SiOx solar cells

An Efficient Nonlocal Hot Electron Model Accounting for Electron-Electron Scattering

Probing hidden conduction mechanisms in diced silicon solar cells by low frequency noise analysis

Effects of the pH on the Formation and Doping Mechanisms of ZnO Nanowires Using Aluminum Nitrate and Ammonia

Parasitic oscillation in the low-frequency noise characterization of solar cells

Enhanced statistical detection of random telegraph noise in frequency and time domain

Platinum redistribution in the Ni0.9Pt0.1/InP system: Impact on solid-state reaction and layer morphology

Integration, BEOL, and Thermal Stress Impact on CMOS-Compatible Titanium-Based Contacts for III-V Devices on a 300-mm Platform

Technological guidelines for the design of tandem III-V nanowire on Si solar cells from opto-electrical simulations

Endurance Statistical Behavior of Resistive Memories Based on Experimental and Theoretical Investigation

Extraction of the gate capacitance coupling coefficient in floating gate non-volatile memories: Statistical study of the effect of mismatching between floating gate memory and reference transistor in dummy cell extraction methods

Selected extended papers from ULIS 2012 conference

Ni(Pt)-based CMOS-compatible contacts on p-InGaAs for III–V photonic devices

Integration of the Ni/InP system on a 300 mm platform for III-V/Si hybrid lasers

Front SiON/TCO Stacks Development for Double-Side Poly-Si/SiOX Passivated Contacts Solar Cells

Front SiON/TCO Stacks Development for Double-Side Poly-Si/SiO X Passivated Contacts Solar Cells

Refined Conformal Mapping Model for MOSFET Parasitic Capacitances Based on Elliptic Integrals

Analytical relationship between subthreshold swing of thermionic and tunnelling currents

Using a mixed ionic electronic conductor to build an analog memristive device with neuromorphic programming capabilities

Tuning Memristivity by Varying the Oxygen Content in a Mixed Ionic–Electronic Conductor

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