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Defect distribution in InGaAsN/GaAs multilayer solar cells

Solar energy, 2016-07, Vol.132, p.587-590

2016

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Impact of gallium concentration in the gas phase on composition of InGaAsN alloys grown by AP-MOVPE correlated with their structural and optical properties

Journal of materials science. Materials in electronics, 2019-09, Vol.30 (17), p.16216-16225

2019

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Determination of composition of non-homogeneous GaInNAs layers

Journal of crystal growth, 2016-01, Vol.433, p.105-113

2016

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Study of photoexcited plasma in p-doped GaAs beveled structures by micro-Raman spectroscopy

Applied surface science, 2008-05, Vol.254 (15), p.4845-4855

2008

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Electronic states at misfit dislocations in partially relaxed InGaAs/GaAs heterostructures

Physica. B, Condensed matter, 2007-01, Vol.388 (1), p.195-199

2007

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Determination of the doping concentration profile in Si δ-doped GaAs layers using micro-Raman spectroscopy of bevelled structures

Thin solid films, 2006-02, Vol.497 (1-2), p.7-15

2006

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APMOVPE growth and characterisation of undoped GaAsN/GaAs heterostructures

Vacuum, 2007-12, Vol.82 (4), p.377-382

2007

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Study of δ-doped GaAs layers by micro-Raman spectroscopy on bevelled samples

Applied surface science, 2004-05, Vol.230 (1), p.379-385

2004

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Accurate carrier profiling of n-type GaAs junctions

Materials science in semiconductor processing, 2008-10, Vol.11 (5), p.259-266

2008

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Micro-Raman study of photoexcited plasma in GaAs bevelled structures

Applied surface science, 2005-04, Vol.243 (1), p.96-105

2005

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Photoreflectance study of δ-doped semiconductor layers by a fast Fourier transformation

Thin solid films, 2000-12, Vol.380 (1), p.243-245

2000

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Misfit Dislocations Study in MOVPE Grown Lattice-Mismatched InGaAs/GaAs Heterostructures by Means of DLTS Technique

Acta physica Polonica, A, 2004-08, Vol.106 (2), p.265-272

2004

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Dislocation-related electronic states in partially strain-relaxed InGaAs/GaAs heterostructures grown by MOVPE

Physica status solidi. C, 2007-07, Vol.4 (8), p.3037-3042

2007

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Determination of doping profiles on bevelled GaAs structures by Raman spectroscopy

Applied surface science, 2001-06, Vol.177 (1), p.139-145

2001

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Determination of doping concentrations in very thin GaAs layers using micro-Raman spectroscopy on bevelled samples

Vacuum, 2005-10, Vol.80 (1), p.20-23

2005

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LP-MOVPE growth and properties of high Si-doped InGaAs contact layer for quantum cascade laser applications

Opto-electronics review, 2016-06, Vol.24 (2)

2016

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MOVPE technology and characterisation of silicon δ-doped GaAs and AlxGa1-xAs

Thin solid films, 2002-06, Vol.412 (1-2), p.55-59

2002

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Determination of indium and nitrogen contents of InGaAsN quantum wells by HRXRD study supported by BAC calculation of the measured energy gap

Materials science--Poland, 2013-10, Vol.31 (4), p.489-494

2013

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Study of the nature of light hole excitonic transitions in InGaAs/GaAs quantum well

Vacuum, 1998-05, Vol.50 (1), p.199-201

1998

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MOVPE growth of AIIIBV-N semiconductor compounds for photovoltaic applications

Crystal research and technology (1979), 2012-03, Vol.47 (3), p.313-320

2012

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Epitaxial Growth and Characterisation of Silicon Delta-Doped GaAs, AlAs and Alx Ga1-xAs

Crystal research and technology (1979), 2001-10, Vol.36 (8-10), p.1145-1154

2001

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Critical layer thickness of InGaAs on GaAs examined by photoreflectance spectroscopy

Vacuum, 1998-05, Vol.50 (1), p.219-221

1998

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Functionally graded semiconductor layers for devices application

Vacuum, 2007-12, Vol.82 (4), p.389-394

2007

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Growth and characterisation of GaN epitaxial layers

Vacuum, 1998-05, Vol.50 (1), p.211-214

1998

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Reverse engineering of AlxGa1−xAs/GaAs structures composition by reflectance spectroscopy

Opto-electronics review, 2011, Vol.19 (4), p.418-424

2011

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Defect distribution in InGaAsN/GaAs multilayer solar cells

Impact of gallium concentration in the gas phase on composition of InGaAsN alloys grown by AP-MOVPE correlated with their structural and optical properties

Determination of composition of non-homogeneous GaInNAs layers

Study of photoexcited plasma in p-doped GaAs beveled structures by micro-Raman spectroscopy

Electronic states at misfit dislocations in partially relaxed InGaAs/GaAs heterostructures

Determination of the doping concentration profile in Si δ-doped GaAs layers using micro-Raman spectroscopy of bevelled structures

APMOVPE growth and characterisation of undoped GaAsN/GaAs heterostructures

Study of δ-doped GaAs layers by micro-Raman spectroscopy on bevelled samples

Accurate carrier profiling of n-type GaAs junctions

Micro-Raman study of photoexcited plasma in GaAs bevelled structures

Photoreflectance study of δ-doped semiconductor layers by a fast Fourier transformation

Misfit Dislocations Study in MOVPE Grown Lattice-Mismatched InGaAs/GaAs Heterostructures by Means of DLTS Technique

Dislocation-related electronic states in partially strain-relaxed InGaAs/GaAs heterostructures grown by MOVPE

Determination of doping profiles on bevelled GaAs structures by Raman spectroscopy

Determination of doping concentrations in very thin GaAs layers using micro-Raman spectroscopy on bevelled samples

LP-MOVPE growth and properties of high Si-doped InGaAs contact layer for quantum cascade laser applications

MOVPE technology and characterisation of silicon δ-doped GaAs and AlxGa1-xAs

Determination of indium and nitrogen contents of InGaAsN quantum wells by HRXRD study supported by BAC calculation of the measured energy gap

Study of the nature of light hole excitonic transitions in InGaAs/GaAs quantum well

MOVPE growth of AIIIBV-N semiconductor compounds for photovoltaic applications

Epitaxial Growth and Characterisation of Silicon Delta-Doped GaAs, AlAs and Alx Ga1-xAs

Critical layer thickness of InGaAs on GaAs examined by photoreflectance spectroscopy

Functionally graded semiconductor layers for devices application

Growth and characterisation of GaN epitaxial layers

Reverse engineering of AlxGa1−xAs/GaAs structures composition by reflectance spectroscopy

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