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Magnetic Properties of Diruthenium(II,III) Carboxylate Compounds. Crystal Structures of Ru2Cl(μ-O2CCHCHCHCHMe)4 and Ru2Cl(μ-O2CCH2OMe)4

Inorganic chemistry, 2000-01, Vol.39 (1), p.65-70

2000

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Tunneling FETs on SOI: Suppression of ambipolar leakage, low-frequency noise behavior, and modeling

Solid-state electronics, 2011-11, Vol.65-66, p.226-233

2011

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A Compact Capacitor-Less High-Speed DRAM Using Field Effect-Controlled Charge Regeneration

IEEE electron device letters, 2012-02, Vol.33 (2), p.179-181

2012

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Interfaces and performance: What future for nanoscale Ge and SiGe based CMOS?

Microelectronic engineering, 2011-07, Vol.88 (7), p.1541-1548

Le Royer, C.

2011

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Synthesis and crystal structure of high and low spin diruthenium complexes with diphenylformamidine and diphenyltriazene ligands

Polyhedron, 2004-11, Vol.23 (17), p.2637-2644

2004

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Extra-low parasitic gate-to-contacts capacitance architecture for sub-14 nm transistor nodes

Solid-state electronics, 2014-07, Vol.97, p.45-51

2014

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Ultrathin (5nm) SiGe-On-Insulator with high compressive strain (−2GPa): From fabrication (Ge enrichment process) to in-depth characterizations

Solid-state electronics, 2014-07, Vol.97, p.82-87

2014

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Gate-induced drain leakage in FD-SOI devices: What the TFET teaches us about the MOSFET

Microelectronic engineering, 2011-07, Vol.88 (7), p.1301-1304

2011

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Synthesis and structure of a new complex of ruthenium containing the tetra(μ-tertbutylbenzoate)diruthenium(II,III) unit

Polyhedron, 1992, Vol.11 (17), p.2209-2215

1992

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A new octahedral, liquid-crystalline complex containing a bulky ruthenium fragment

Inorganic chemistry communications, 1999-04, Vol.2 (4), p.153-155

1999

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Reaction of diruthenium(II,III) acetate with triphenylphosphine

Polyhedron, 1991, Vol.10 (1), p.113-120

1991

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Modeling of low frequency noise in FD SOI MOSFETs

Solid-state electronics, 2013-12, Vol.90, p.116-120

2013

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Detailed investigation of effective field, hole mobility and scattering mechanisms in GeOI and Ge pMOSFETs

Solid-state electronics, 2011-05, Vol.59 (1), p.25-33

2011

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Tert-butylbenzamidate diruthenium(II, III) compounds. Crystal structure of [Ru2(μ-HNOCC6H4-p-CM3)4(OPPh3)2]BF4

Polyhedron, 1993-12, Vol.12 (24), p.2947-2953

1993

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Dual strained channel CMOS in FDSOI architecture: New insights on the device performance

Solid-state electronics, 2011-11, Vol.65-66, p.9-15

2011

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High mobility CMOS: First demonstration of planar GeOI p-FETs with SOI n-FETs

Solid-state electronics, 2011-05, Vol.59 (1), p.2-7

2011

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In-depth physical investigation of GeOI pMOSFET by TCAD calibrated simulation

Solid-state electronics, 2011-03, Vol.57 (1), p.67-72

2011

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High performance 70 nm gate length germanium-on-insulator pMOSFET with high- k/metal gate

Solid-state electronics, 2009-07, Vol.53 (7), p.723-729

2009

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Improved GeOI substrates for pMOSFET off-state leakage control

Microelectronic engineering, 2009-07, Vol.86 (7), p.1585-1588

2009

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New numerical low frequency noise model for front and buried oxide trap density characterization in FDSOI MOSFETs

Microelectronic engineering, 2011-07, Vol.88 (7), p.1286-1290

2011

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Formation of hydride complexes of ruthenium from diruthenium(II,III) carboxylate compounds

Inorganica Chimica Acta, 1991-08, Vol.186 (2), p.239-242

1991

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Characterization of impact of process options in Germanium-On-Insulator (GeOI) high-k & metal gate pMOSFETs by low-frequency noise

Solid-state electronics, 2011-05, Vol.59 (1), p.34-38

2011

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Improved 1/f noise characterization of strained SiGe on insulator MOSFETs fabricated on wafers obtained by the Ge enrichment technique

Solid-state electronics, 2012-04, Vol.70, p.27-32

2012

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A comparative 1/ f noise study of GeOI wafers obtained by the Ge enrichment technique and the Smart Cut technology

Microelectronic engineering, 2011-07, Vol.88 (7), p.1298-1300

2011

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Gate-last integration on planar FDSOI for low-VTp and low-EOT MOSFETs: Insulating Films on Semiconductors 2013

Microelectronic engineering, 2013, Vol.109, p.306-309

2013

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Magnetic Properties of Diruthenium(II,III) Carboxylate Compounds. Crystal Structures of Ru2Cl(μ-O2CCHCHCHCHMe)4 and Ru2Cl(μ-O2CCH2OMe)4

Tunneling FETs on SOI: Suppression of ambipolar leakage, low-frequency noise behavior, and modeling

A Compact Capacitor-Less High-Speed DRAM Using Field Effect-Controlled Charge Regeneration

Interfaces and performance: What future for nanoscale Ge and SiGe based CMOS?

Synthesis and crystal structure of high and low spin diruthenium complexes with diphenylformamidine and diphenyltriazene ligands

Extra-low parasitic gate-to-contacts capacitance architecture for sub-14 nm transistor nodes

Ultrathin (5nm) SiGe-On-Insulator with high compressive strain (−2GPa): From fabrication (Ge enrichment process) to in-depth characterizations

Gate-induced drain leakage in FD-SOI devices: What the TFET teaches us about the MOSFET

Synthesis and structure of a new complex of ruthenium containing the tetra(μ-tertbutylbenzoate)diruthenium(II,III) unit

A new octahedral, liquid-crystalline complex containing a bulky ruthenium fragment

Reaction of diruthenium(II,III) acetate with triphenylphosphine

Modeling of low frequency noise in FD SOI MOSFETs

Detailed investigation of effective field, hole mobility and scattering mechanisms in GeOI and Ge pMOSFETs

Tert-butylbenzamidate diruthenium(II, III) compounds. Crystal structure of [Ru2(μ-HNOCC6H4-p-CM3)4(OPPh3)2]BF4

Dual strained channel CMOS in FDSOI architecture: New insights on the device performance

High mobility CMOS: First demonstration of planar GeOI p-FETs with SOI n-FETs

In-depth physical investigation of GeOI pMOSFET by TCAD calibrated simulation

High performance 70 nm gate length germanium-on-insulator pMOSFET with high- k/metal gate

Improved GeOI substrates for pMOSFET off-state leakage control

New numerical low frequency noise model for front and buried oxide trap density characterization in FDSOI MOSFETs

Formation of hydride complexes of ruthenium from diruthenium(II,III) carboxylate compounds

Characterization of impact of process options in Germanium-On-Insulator (GeOI) high-k & metal gate pMOSFETs by low-frequency noise

Improved 1/f noise characterization of strained SiGe on insulator MOSFETs fabricated on wafers obtained by the Ge enrichment technique

A comparative 1/ f noise study of GeOI wafers obtained by the Ge enrichment technique and the Smart Cut technology

Gate-last integration on planar FDSOI for low-VTp and low-EOT MOSFETs: Insulating Films on Semiconductors 2013

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