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Contribution of the buffer layer to the Raman spectrum of epitaxial graphene on SiC(0001)

New journal of physics, 2013-04, Vol.15 (4), p.43031-11

2013

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Synthesis of atomically thin hexagonal boron nitride films on nickel foils by molecular beam epitaxy

Applied physics letters, 2015-05, Vol.106 (21)

2015

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High-frequency acoustic charge transport in GaAs nanowires

Nanotechnology, 2014-04, Vol.25 (13), p.135204-6

2014

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A physical model for the reverse leakage current in (In,Ga)N/GaN light-emitting diodes based on nanowires

Journal of applied physics, 2016-01, Vol.119 (4)

2016

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Structural change upon annealing of amorphous GeSbTe grown on Si(111)

Journal of applied physics, 2014-08, Vol.116 (5)

2014

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In/GaN(0001)-(3×3)R30° adsorbate structure as a template for embedded (In, Ga)N/GaN monolayers and short-period superlattices

Applied physics letters, 2017-02, Vol.110 (7)

2017

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Epitaxial Growth of GaN Nanowires with High Structural Perfection on a Metallic TiN Film

Nano letters, 2015-06, Vol.15 (6), p.3743-3747

2015

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The impact of ELT distortions and instabilities on future astrometric observations

Monthly notices of the Royal Astronomical Society, 2018-09, Vol.479 (2), p.1974-1985

2018

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Physical origin of the incubation time of self-induced GaN nanowires

Applied physics letters, 2011-07, Vol.99 (3), p.033102-033102-3

2011

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Synergistic effect of H2O and O2 on the decoupling of epitaxial monolayer graphene from SiC(0001) via thermal treatments

Carbon (New York), 2014-11, Vol.78, p.298-304

2014

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Growth of boron-doped few-layer graphene by molecular beam epitaxy

Applied physics letters, 2018-04, Vol.112 (16)

2018

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Anisotropic quantum Hall effect in epitaxial graphene on stepped SiC surfaces

Physical review. B, Condensed matter and materials physics, 2012-06, Vol.85 (23), Article 235402

2012

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Acousto-electric transport in epitaxial monolayer graphene on SiC

Applied physics letters, 2013-06, Vol.102 (22)

2013

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Development of the Warm Astrometric Mask for MICADO Astrometry Calibration

Publications of the Astronomical Society of the Pacific, 2019-05, Vol.131 (999), p.54503

2019

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Si doping effects on (In,Ga)N nanowires

Journal of applied physics, 2014-12, Vol.116 (24)

2014

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Efficient room-temperature nuclear spin hyperpolarization of a defect atom in a semiconductor

Nature communications, 2013-04, Vol.4 (1), p.1751-1751, Article 1751

2013

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Epitaxial Fe3Si/Ge/Fe3Si thin film multilayers grown on GaAs(001)

Thin solid films, 2014-04, Vol.556, p.120-124

2014

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Photoelectrochemical properties of InN nanowire photoelectrodes for solar water splitting

Semiconductor science and technology, 2016-07, Vol.31 (7), p.74001

2016

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In situ investigation of self-induced GaN nanowire nucleation on Si

Applied physics letters, 2010-07, Vol.97 (4), p.043101-043101-3

2010

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Control of GaN surface morphologies using plasma-assisted molecular beam epitaxy

Journal of applied physics, 2000-08, Vol.88 (4), p.1855-1860

2000

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The effect of the SiC(0001) surface morphology on the growth of epitaxial mono-layer graphene nanoribbons

Carbon (New York), 2017-05, Vol.115, p.162-168

2017

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Compatibility of the selective area growth of GaN nanowires on AlN-buffered Si substrates with the operation of light emitting diodes

Nanotechnology, 2015-02, Vol.26 (8), p.085605-085605

2015

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Influence of the silicon carbide surface morphology on the epitaxial graphene formation

Applied physics letters, 2011-09, Vol.99 (11), p.111901-111901-3

2011

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Acoustically Driven Photon Antibunching in Nanowires

Nano letters, 2012-01, Vol.12 (1), p.252-258

2012

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Defect mediated van der Waals epitaxy of hexagonal boron nitride on graphene

2d materials, 2018-01, Vol.5 (2), p.25004

2018

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Contribution of the buffer layer to the Raman spectrum of epitaxial graphene on SiC(0001)

Synthesis of atomically thin hexagonal boron nitride films on nickel foils by molecular beam epitaxy

High-frequency acoustic charge transport in GaAs nanowires

A physical model for the reverse leakage current in (In,Ga)N/GaN light-emitting diodes based on nanowires

Structural change upon annealing of amorphous GeSbTe grown on Si(111)

In/GaN(0001)-(3×3)R30° adsorbate structure as a template for embedded (In, Ga)N/GaN monolayers and short-period superlattices

Epitaxial Growth of GaN Nanowires with High Structural Perfection on a Metallic TiN Film

The impact of ELT distortions and instabilities on future astrometric observations

Physical origin of the incubation time of self-induced GaN nanowires

Synergistic effect of H2O and O2 on the decoupling of epitaxial monolayer graphene from SiC(0001) via thermal treatments

Growth of boron-doped few-layer graphene by molecular beam epitaxy

Anisotropic quantum Hall effect in epitaxial graphene on stepped SiC surfaces

Acousto-electric transport in epitaxial monolayer graphene on SiC

Development of the Warm Astrometric Mask for MICADO Astrometry Calibration

Si doping effects on (In,Ga)N nanowires

Efficient room-temperature nuclear spin hyperpolarization of a defect atom in a semiconductor

Epitaxial Fe3Si/Ge/Fe3Si thin film multilayers grown on GaAs(001)

Photoelectrochemical properties of InN nanowire photoelectrodes for solar water splitting

In situ investigation of self-induced GaN nanowire nucleation on Si

Control of GaN surface morphologies using plasma-assisted molecular beam epitaxy

The effect of the SiC(0001) surface morphology on the growth of epitaxial mono-layer graphene nanoribbons

Compatibility of the selective area growth of GaN nanowires on AlN-buffered Si substrates with the operation of light emitting diodes

Influence of the silicon carbide surface morphology on the epitaxial graphene formation

Acoustically Driven Photon Antibunching in Nanowires

Defect mediated van der Waals epitaxy of hexagonal boron nitride on graphene

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