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Absence of boron aggregates in superconducting silicon confirmed by atom probe tomography

Applied physics letters, 2012-10, Vol.101 (18)

2012

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Thickness dependence of the superconducting critical temperature in heavily doped Si:B epilayers

Physical review. B, Condensed matter and materials physics, 2013-08, Vol.88 (6), Article 064508

2013

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Low-temperature transition to a superconducting phase in boron-doped silicon films grown on (001)-oriented silicon wafers

Physical review. B, Condensed matter and materials physics, 2010-01, Vol.81 (2), Article 020501

2010

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Superconducting properties of laser annealed implanted Si:B epilayers

Superconductor science & technology, 2013-04, Vol.26 (4), p.45009-4

2013

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SIMS quantification of thick Si1−x Gex films (0 ≤ x ≤ 1) using the isotopic comparative method under Ar+ beam

Surface and interface analysis, 2013-01, Vol.45 (1), p.376-380

2013

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Self-consistent isotopic comparative method used to determine dependence of secondary-ion yields on oxygen concentration in Si-O system up to 33 at

Surface and interface analysis, 2013-01, Vol.45 (1), p.369-372

2013

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Deconvolution of very low primary energy SIMS depth profiles

Applied surface science, 2006-07, Vol.252 (19), p.6478-6481

2006

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Influence of surface orientation on the formation of sputtering-induced ripple topography in silicon

Applied surface science, 2004-06, Vol.231, p.678-683

2004

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Ultra-low energy SIMS analysis of boron deltas in silicon

Journal of crystal growth, 2002-11, Vol.245 (1), p.1-8

2002

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Toward a better reliability in the deconvolution of SIMS depth profiles

Surface and interface analysis, 1998-12, Vol.26 (13), p.974-983

1998

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Some examples of depth resolution in SIMS analysis

Applied surface science, 1993, Vol.63 (1), p.62-69

Prudon, G.

1993

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Deconvolution of SIMS Depth Profiles of Boron in Silicon

Surface and interface analysis, 1996-10, Vol.24 (11), p.733-745

1996

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Quantification of germanium and boron in heterostructures Si/Si1−xGex/Si by SIMS

Thin solid films, 1997-02, Vol.294 (1-2), p.54-58

1997

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SIMS quantification of thick Si1-xGex films (0 ≤ x ≤ 1) using the isotopic comparative method under Ar+ beam

Surface and interface analysis, 2013, Vol.45

2013

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SIMS quantification of thick Si 1−x Ge x films (0 ≤ x ≤ 1) using the isotopic comparative method under Ar + beam

Surface and interface analysis, 2013-01, Vol.45 (1), p.376-380

2013

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Effectiveness and Limits of the Deconvolution of SIMS Depth Profiles of Boron in Silicon

Surface and interface analysis, 1997-06, Vol.25 (6), p.464-477

1997

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The isotopic comparative method (ICM) for SIMS quantification of boron in silicon up to 40 at.

Surface and interface analysis, 2011-01, Vol.43 (1-2), p.36-40

2011

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SIMS depth profile correction for the study of the first step of the diffusion of boron in silicon

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1998-07, Vol.142 (3), p.361-376

1998

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Surface roughening and erosion rate change at low energy SIMS depth profiling of silicon during oblique O 2 + bombardment

Applied surface science, 2006-12, Vol.253 (5), p.2662-2670

2006

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Imaging by atomic force microscopy of the electrical properties difference of the facets of oxygen-ion-induced ripple topography in silicon

Applied surface science, 2004-06, Vol.231, p.136-140

2004

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Surface roughening and erosion rate change at low energy SIMS depth profiling of silicon during oblique O2+ bombardment

Applied surface science, 2006-12, Vol.253 (5), p.2662-2670

2006

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Surface roughening and erosion rate change at low energy SIMS depth profiling of silicon during oblique bombardment

Applied surface science, 2006-12, Vol.253 (5), p.2662-2670

2006

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Depth resolution in SIMS study of boron δ-doping in epitaxial silicon

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1994-03, Vol.85 (1-4), p.379-382

1994

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Influence of surface orientation on the formation of sputtering-induced ripple topography in silicon

Applied surface science, 2004, Vol.231-32, p.678-683

2004

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Depth resolution in SIMS study of a Fe-Ti multilayer structure

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1992-02, Vol.64 (1), p.636-640

1992

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Absence of boron aggregates in superconducting silicon confirmed by atom probe tomography

Thickness dependence of the superconducting critical temperature in heavily doped Si:B epilayers

Low-temperature transition to a superconducting phase in boron-doped silicon films grown on (001)-oriented silicon wafers

Superconducting properties of laser annealed implanted Si:B epilayers

SIMS quantification of thick Si1−x Gex films (0 ≤ x ≤ 1) using the isotopic comparative method under Ar+ beam

Self-consistent isotopic comparative method used to determine dependence of secondary-ion yields on oxygen concentration in Si-O system up to 33 at

Deconvolution of very low primary energy SIMS depth profiles

Influence of surface orientation on the formation of sputtering-induced ripple topography in silicon

Ultra-low energy SIMS analysis of boron deltas in silicon

Toward a better reliability in the deconvolution of SIMS depth profiles

Some examples of depth resolution in SIMS analysis

Deconvolution of SIMS Depth Profiles of Boron in Silicon

Quantification of germanium and boron in heterostructures Si/Si1−xGex/Si by SIMS

SIMS quantification of thick Si1-xGex films (0 ≤ x ≤ 1) using the isotopic comparative method under Ar+ beam

SIMS quantification of thick Si 1−x Ge x films (0 ≤ x ≤ 1) using the isotopic comparative method under Ar + beam

Effectiveness and Limits of the Deconvolution of SIMS Depth Profiles of Boron in Silicon

The isotopic comparative method (ICM) for SIMS quantification of boron in silicon up to 40 at.

SIMS depth profile correction for the study of the first step of the diffusion of boron in silicon

Surface roughening and erosion rate change at low energy SIMS depth profiling of silicon during oblique O 2 + bombardment

Imaging by atomic force microscopy of the electrical properties difference of the facets of oxygen-ion-induced ripple topography in silicon

Surface roughening and erosion rate change at low energy SIMS depth profiling of silicon during oblique O2+ bombardment

Surface roughening and erosion rate change at low energy SIMS depth profiling of silicon during oblique bombardment

Depth resolution in SIMS study of boron δ-doping in epitaxial silicon

Influence of surface orientation on the formation of sputtering-induced ripple topography in silicon

Depth resolution in SIMS study of a Fe-Ti multilayer structure

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