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Theoretical investigation of nitrogen-vacancy defects in silicon

AIP advances, 2022-02, Vol.12 (2), p.025112-025112-10

2022

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The origin of infrared bands in nitrogen-doped Si

Journal of materials science, 2022-03, Vol.57 (9), p.5507-5517

2022

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Infrared spectroscopy studies of localized vibrations in neutron irradiated silicon

Journal of materials science. Materials in electronics, 2019-08, Vol.30 (16), p.15345-15355

2019

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Isochronal annealing studies of carbon-related defects in irradiated Si

Physica. B, Condensed matter, 2006-04, Vol.376, p.165-168

2006

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Carbon-related complexes in neutron-irradiated silicon

Physica. B, Condensed matter, 2003-12, Vol.340-342, p.551-555

2003

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Infrared absorption spectra of defects in carbon doped neutron-irradiated Si

Journal of materials science. Materials in electronics, 2007-07, Vol.18 (7), p.721-728

2007

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Production and evolution of defects in neutron-irradiated Si subjected to thermal pre-treatments under hydrostatic pressure

Journal of physics. Condensed matter, 2005-06, Vol.17 (22), p.S2341-S2349

2005

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Effect of carbon on oxygen precipitation in Czochralski silicon

Physica status solidi. C, 2005-04, Vol.2 (6), p.1963-1967

2005

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The influence of thermal treatments under hydrostatic pressure prior to irradiation on the annealing characteristics of the VO defect in Si

Materials science & engineering. B, Solid-state materials for advanced technology, 2009-03, Vol.159, p.122-127

2009

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Defects in silicon heat-treated under uniform stress and irradiated with fast neutrons

Physica status solidi. A, Applied research, 2003-09, Vol.199 (2), p.207-213

2003

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Pressure assisted evolution of defects in silicon

Crystal research and technology (1979), 2003-12, Vol.38 (12), p.1058-1062

2003

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Experimental and theoretical study of the C4 defect in neutron irradiated silicon

Journal of applied physics, 2018-04, Vol.123 (14)

2018

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Oxygen agglomeration and formation of oxygen-related thermal donors in heat-treated silicon

Crystal research and technology (1979), 2003-04, Vol.38 (3-5), p.394-398

2003

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Substitutional carbon-dioxygen center in irradiated silicon

Materials science in semiconductor processing, 2021-06, Vol.127, p.105661, Article 105661

2021

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The CiCs(SiI) defect in silicon: An infrared spectroscopy study

Journal of applied physics, 2006-08, Vol.100 (3)

2006

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Complementary infrared and transmission electron microscopy studies of the effect of high temperature–high pressure treatments on oxygen-related defects in irradiated silicon

Journal of applied physics, 2003-10, Vol.94 (7), p.4363-4367

2003

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The C i C s ( Si I ) defect in silicon: An infrared spectroscopy study

Journal of applied physics, 2006-08, Vol.100 (3), p.033523-033523-4

2006

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Investigations of the Effect of High Pressure on the Annealing Behavior of Oxygen Related Defects in Silicon

Solid state phenomena, 2004-01, Vol.95-96, p.59-64

2004

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Infrared studies of oxygen-related defect formation in neutron-irradiated Cz-silicon after annealing at T=450–650 °C under hydrostatic pressure

Materials science & engineering. B, Solid-state materials for advanced technology, 2003-09, Vol.102 (1), p.339-343

2003

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IR Studies on the Interaction between Thermal and Radiation Defects in Silicon

Solid state phenomena, 2008-01, Vol.131-133, p.351-356

2008

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Infrared studies of oxygen-related defect formation in neutron-irradiated Cz-silicon after annealing at T = 450-650 deg C under hydrostatic pressure

Materials science & engineering. B, Solid-state materials for advanced technology, 2003-09, Vol.B102 (1-3), p.339-343

2003

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"New Donors" in Czochralski Grown Silicon Annealed at T≥ 600°C under Compressive Stress

Solid state phenomena, 2005-12, Vol.108-109, p.181-186

2005

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Pressure assisted evolution of defects in silicon

Crystal research and technology (1979), 2003, Vol.38 (12), p.1058-1062

2003

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Isochronal annealing studies of carbon-related defects in irradiated Si

Physica. B, Condensed matter, 2006, Vol.376-77, p.165-168

2006

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Carbon-related complexes in neutron-irradiated silicon

Physica. B, Condensed matter, 2003, Vol.340-42, p.551-555

2003

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Theoretical investigation of nitrogen-vacancy defects in silicon

The origin of infrared bands in nitrogen-doped Si

Infrared spectroscopy studies of localized vibrations in neutron irradiated silicon

Isochronal annealing studies of carbon-related defects in irradiated Si

Carbon-related complexes in neutron-irradiated silicon

Infrared absorption spectra of defects in carbon doped neutron-irradiated Si

Production and evolution of defects in neutron-irradiated Si subjected to thermal pre-treatments under hydrostatic pressure

Effect of carbon on oxygen precipitation in Czochralski silicon

The influence of thermal treatments under hydrostatic pressure prior to irradiation on the annealing characteristics of the VO defect in Si

Defects in silicon heat-treated under uniform stress and irradiated with fast neutrons

Pressure assisted evolution of defects in silicon

Experimental and theoretical study of the C4 defect in neutron irradiated silicon

Oxygen agglomeration and formation of oxygen-related thermal donors in heat-treated silicon

Substitutional carbon-dioxygen center in irradiated silicon

The CiCs(SiI) defect in silicon: An infrared spectroscopy study

Complementary infrared and transmission electron microscopy studies of the effect of high temperature–high pressure treatments on oxygen-related defects in irradiated silicon

The C i C s ( Si I ) defect in silicon: An infrared spectroscopy study

Investigations of the Effect of High Pressure on the Annealing Behavior of Oxygen Related Defects in Silicon

Infrared studies of oxygen-related defect formation in neutron-irradiated Cz-silicon after annealing at T=450–650 °C under hydrostatic pressure

IR Studies on the Interaction between Thermal and Radiation Defects in Silicon

Infrared studies of oxygen-related defect formation in neutron-irradiated Cz-silicon after annealing at T = 450-650 deg C under hydrostatic pressure

"New Donors" in Czochralski Grown Silicon Annealed at T≥ 600°C under Compressive Stress

Pressure assisted evolution of defects in silicon

Isochronal annealing studies of carbon-related defects in irradiated Si

Carbon-related complexes in neutron-irradiated silicon

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