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Wet Alkaline Etching of Si Selectively to SiGe for sub 10 nm Gate All Around Architectures

ECS journal of solid state science and technology, 2021-01, Vol.10 (1), p.14007

2021

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Thin layer etching of low-k SiCO spacer using hydrogen ion implantation followed by hydrofluoric acid

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2018-09, Vol.36 (5)

2018

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Role of SiCl4 addition in CH3F/O2 based chemistry for Si3N4 etching selectively to SiO2, SiCO, and Si

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2023-05, Vol.41 (3)

2023

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Characterization of AlGaN/GaN degradations during plasma etching for power devices

Microelectronic engineering, 2021-09, Vol.249, p.111619, Article 111619

2021

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Influences of etching chemical parameters on AlGaN/GaN electrical degradation in power devices

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2021-12, Vol.39 (6)

2021

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Plasma deposition—Impact of ions in plasma enhanced chemical vapor deposition, plasma enhanced atomic layer deposition, and applications to area selective deposition

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2020-05, Vol.38 (3)

2020

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Area selective deposition using alternate deposition and etch super-cycle strategies

Dalton transactions : an international journal of inorganic chemistry, 2022-01, Vol.51 (2), p.442-45

2022

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XPS study of a selective GaN etching process using self-limiting cyclic approach for power devices application

Microelectronic engineering, 2020-05, Vol.228, p.111328, Article 111328

2020

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Gate spacers etching of Si3N4 using cyclic approach for 3D CMOS devices

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2021-05, Vol.39 (3)

2021

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Role of SiCl$_4$ addition in CH$_3$F/O$_2$ based chemistry for Si$_3$N$_4$ etching selectively to SiO$_2$, SiCO and Si

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2023, Vol.41 (3)

2023

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Selective plasma etching of silicon-containing high chi block copolymer for directed self-assembly (DSA) application

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2021-07, Vol.39 (4)

2021

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Topographical selective deposition: A comparison between plasma-enhanced atomic layer deposition/sputtering and plasma-enhanced atomic layer deposition/quasi-atomic layer etching approaches

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2021-05, Vol.39 (3)

2021

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Performance evaluation of GaN etching using Cl2-based plasma with bias pulsing

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2024-07, Vol.42 (4)

2024

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Cyclic approach for silicon nitride spacer etching in fin field-effect transistors and stacked nanowire devices

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2020-12, Vol.38 (6)

2020

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Mechanism of residue formation on Ge-rich germanium antimony tellurium alloys after plasma etching

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2023-09, Vol.41 (5)

2023

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Etching of sub-10 nm half-pitch high chi block copolymers for directed self-assembly (DSA) application

Microelectronic engineering, 2020-06, Vol.230, p.111369, Article 111369

2020

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Gate spacers etching of Si$_3$N$_4$ using cyclic approach for 3D CMOS devices

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2021, Vol.39

2021

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Study of plasma etching impact on chemoepitaxy directed self-assembly

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2021-05, Vol.39 (3)

2021

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Atomic and Molecular Layer Deposition Area Selective Deposition using alternate deposition and etch super-cycle strategies

Dalton transactions : an international journal of inorganic chemistry, 2021-11

2021

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Understanding of a new approach for silicon nitride spacer etching using gaseous hydrofluoric acid after hydrogen ion implantation

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2017-03, Vol.35 (2)

2017

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Characterization of photoresist films exposed to high-dose implantation conditions

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2018-01, Vol.36 (1)

2018

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Blister formation mechanism during high dose implanted photoresist stripping

Microelectronic engineering, 2018-07, Vol.194, p.25-30

2018

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Low temperature Topographically Selective Deposition by Plasma Enhanced Atomic Layer Deposition with ion bombardment assistance

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2021-05, Vol.39 (3)

2021

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Isotropic dry etching of Si selectively to Si0.7Ge0.3 for CMOS sub-10 nm applications

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2020-05, Vol.38 (3)

2020

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New CH 4 -N 2 dry etch chemistry for poly(methyl methacrylate) removal without consuming polystyrene for lamellar copolymers application

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2019-05, Vol.37 (3)

2019

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Wet Alkaline Etching of Si Selectively to SiGe for sub 10 nm Gate All Around Architectures

Thin layer etching of low-k SiCO spacer using hydrogen ion implantation followed by hydrofluoric acid

Role of SiCl4 addition in CH3F/O2 based chemistry for Si3N4 etching selectively to SiO2, SiCO, and Si

Characterization of AlGaN/GaN degradations during plasma etching for power devices

Influences of etching chemical parameters on AlGaN/GaN electrical degradation in power devices

Plasma deposition—Impact of ions in plasma enhanced chemical vapor deposition, plasma enhanced atomic layer deposition, and applications to area selective deposition

Area selective deposition using alternate deposition and etch super-cycle strategies

XPS study of a selective GaN etching process using self-limiting cyclic approach for power devices application

Gate spacers etching of Si3N4 using cyclic approach for 3D CMOS devices

Role of SiCl$_4$ addition in CH$_3$F/O$_2$ based chemistry for Si$_3$N$_4$ etching selectively to SiO$_2$, SiCO and Si

Selective plasma etching of silicon-containing high chi block copolymer for directed self-assembly (DSA) application

Topographical selective deposition: A comparison between plasma-enhanced atomic layer deposition/sputtering and plasma-enhanced atomic layer deposition/quasi-atomic layer etching approaches

Performance evaluation of GaN etching using Cl2-based plasma with bias pulsing

Cyclic approach for silicon nitride spacer etching in fin field-effect transistors and stacked nanowire devices

Mechanism of residue formation on Ge-rich germanium antimony tellurium alloys after plasma etching

Etching of sub-10 nm half-pitch high chi block copolymers for directed self-assembly (DSA) application

Gate spacers etching of Si$_3$N$_4$ using cyclic approach for 3D CMOS devices

Study of plasma etching impact on chemoepitaxy directed self-assembly

Atomic and Molecular Layer Deposition Area Selective Deposition using alternate deposition and etch super-cycle strategies

Understanding of a new approach for silicon nitride spacer etching using gaseous hydrofluoric acid after hydrogen ion implantation

Characterization of photoresist films exposed to high-dose implantation conditions

Blister formation mechanism during high dose implanted photoresist stripping

Low temperature Topographically Selective Deposition by Plasma Enhanced Atomic Layer Deposition with ion bombardment assistance

Isotropic dry etching of Si selectively to Si0.7Ge0.3 for CMOS sub-10 nm applications

New CH 4 -N 2 dry etch chemistry for poly(methyl methacrylate) removal without consuming polystyrene for lamellar copolymers application

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