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Al–O–Al defect complexes as possible candidates for channel electron mobility reducing trapping centers in 4H-SiC metal–oxide–semiconductor field-effect transistors

Journal of applied physics, 2024-08, Vol.136 (8)

2024

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Mechanism leading to semi-insulating property of carbon-doped GaN: Analysis of donor acceptor ratio and method for its determination

Journal of applied physics, 2021-11, Vol.130 (18)

2021

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Photon-assisted electron depopulation of 4H-SiC/SiO2 interface states in n-channel 4H-SiC metal–oxide–semiconductor field effect transistors

Journal of applied physics, 2024-07, Vol.136 (3)

2024

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Temperature-dependent electroluminescence of a gate pulsed silicon carbide metal–oxide–semiconductor field-effect transistor: Insight into interface traps

Journal of applied physics, 2023-07, Vol.134 (3)

2023

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Electrically detected magnetic resonance of carbon dangling bonds at the Si-face 4H-SiC/SiO2 interface

Journal of applied physics, 2018-04, Vol.123 (16)

2018

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Theoretical and experimental investigations of barrier height inhomogeneities in poly-Si/4H-SiC heterojunction diodes

Semiconductor science and technology, 2020-11, Vol.35 (11), p.115011

2020

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Recombination centers in 4H-SiC investigated by electrically detected magnetic resonance and ab initio modeling

Journal of applied physics, 2016-05, Vol.119 (18)

2016

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Recombination defects at the 4H-SiC/SiO2 interface investigated with electrically detected magnetic resonance and ab initio calculations

Journal of applied physics, 2018-07, Vol.124 (4)

2018

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Barrier height tuning by inverse sputter etching at poly-Si/4H-SiC heterojunction diodes

Semiconductor science and technology, 2021-05, Vol.36 (5), p.55021

2021

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A Recombination-Enhanced-Defect-Reaction-Based Model for the Gate Switching Instability in SiC MOSFETs

2024 IEEE International Reliability Physics Symposium (IRPS), 2024, p.3B.1-1-3B.1-7

2024

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Similarities and Differences of BTI in SiC and Si Power MOSFETs

2020 IEEE International Reliability Physics Symposium (IRPS), 2020, p.1-7

2020

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Insertion behavior of sodium and potassium ions into thin CVD-SiOx layers by means of a triangular voltage sweep method

Surface and interface analysis, 2016-07, Vol.48 (7), p.636-649

2016

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On the Distribution of NBTI Time Constants on a Long, Temperature-Accelerated Time Scale

IEEE transactions on electron devices, 2013-07, Vol.60 (7), p.2148-2155

2013

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The 'permanent' component of NBTI: Composition and annealing

2011 International Reliability Physics Symposium, 2011, p.6A.2.1-6A.2.9

2011

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Stress and Recovery Dynamics of Drain Current in GaN HD-GITs Submitted to DC Semi-ON stress

Microelectronics and reliability, 2019-09, Vol.100-101, p.113482, Article 113482

2019

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Oxide and Interface Defect Analysis of lateral 4H-SiC MOSFETs through CV Characterization and TCAD Simulations

Materials science forum, 2023-05, Vol.1090, p.119-126

2023

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Modelling the interactions and diffusion of NO in amorphous SiO 2

Modelling and simulation in materials science and engineering, 2021-04, Vol.29 (3), p.35008

2021

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Growth and characterization of low pressure chemical vapor deposited Si on Si-face 4H–SiC

Materials science in semiconductor processing, 2021-08, Vol.131, p.105888, Article 105888

2021

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Insertion behavior of sodium and potassium ions into thin CVD-SiO sub(x) layers by means of a triangular voltage sweep method

Surface and interface analysis, 2016-07, Vol.48 (7), p.636-649

2016

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Insertion behavior of sodium and potassium ions into thin CVD‐SiO x layers by means of a triangular voltage sweep method

Surface and interface analysis, 2016-07, Vol.48 (7), p.636-649

2016

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Physical Modeling of Bias Temperature Instabilities in SiC MOSFETs

2019 IEEE International Electron Devices Meeting (IEDM), 2019, p.20.5.1-20.5.4

2019

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Quantitative investigation of near interface traps in 4H-SiC MOSFETs via drain current deep level transient spectroscopy

2016 European Conference on Silicon Carbide & Related Materials (ECSCRM), 2017-05, Vol.897, p.1-1

2017

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First Principles Study of the Influence of the Local Steric Environment on the Incorporation and Migration of NO in a-SiO2

Materials science forum, 2019-07, Vol.963, p.194-198

2019

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Identifying Performance Limiting Defects in Silicon Carbide pn-Junctions: A Theoretical Study

Materials Science Forum, 2016-05, Vol.858, p.257-260

2016

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Gate-sided hydrogen release as the origin of "permanent" NBTI degradation: From single defects to lifetimes

2015 IEEE International Electron Devices Meeting (IEDM), 2015, p.20.1.1-20.1.4

2015

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Al–O–Al defect complexes as possible candidates for channel electron mobility reducing trapping centers in 4H-SiC metal–oxide–semiconductor field-effect transistors

Mechanism leading to semi-insulating property of carbon-doped GaN: Analysis of donor acceptor ratio and method for its determination

Photon-assisted electron depopulation of 4H-SiC/SiO2 interface states in n-channel 4H-SiC metal–oxide–semiconductor field effect transistors

Temperature-dependent electroluminescence of a gate pulsed silicon carbide metal–oxide–semiconductor field-effect transistor: Insight into interface traps

Electrically detected magnetic resonance of carbon dangling bonds at the Si-face 4H-SiC/SiO2 interface

Theoretical and experimental investigations of barrier height inhomogeneities in poly-Si/4H-SiC heterojunction diodes

Recombination centers in 4H-SiC investigated by electrically detected magnetic resonance and ab initio modeling

Recombination defects at the 4H-SiC/SiO2 interface investigated with electrically detected magnetic resonance and ab initio calculations

Barrier height tuning by inverse sputter etching at poly-Si/4H-SiC heterojunction diodes

A Recombination-Enhanced-Defect-Reaction-Based Model for the Gate Switching Instability in SiC MOSFETs

Similarities and Differences of BTI in SiC and Si Power MOSFETs

Insertion behavior of sodium and potassium ions into thin CVD-SiOx layers by means of a triangular voltage sweep method

On the Distribution of NBTI Time Constants on a Long, Temperature-Accelerated Time Scale

The 'permanent' component of NBTI: Composition and annealing

Stress and Recovery Dynamics of Drain Current in GaN HD-GITs Submitted to DC Semi-ON stress

Oxide and Interface Defect Analysis of lateral 4H-SiC MOSFETs through CV Characterization and TCAD Simulations

Modelling the interactions and diffusion of NO in amorphous SiO 2

Growth and characterization of low pressure chemical vapor deposited Si on Si-face 4H–SiC

Insertion behavior of sodium and potassium ions into thin CVD-SiO sub(x) layers by means of a triangular voltage sweep method

Insertion behavior of sodium and potassium ions into thin CVD‐SiO x layers by means of a triangular voltage sweep method

Physical Modeling of Bias Temperature Instabilities in SiC MOSFETs

Quantitative investigation of near interface traps in 4H-SiC MOSFETs via drain current deep level transient spectroscopy

First Principles Study of the Influence of the Local Steric Environment on the Incorporation and Migration of NO in a-SiO2

Identifying Performance Limiting Defects in Silicon Carbide pn-Junctions: A Theoretical Study

Gate-sided hydrogen release as the origin of "permanent" NBTI degradation: From single defects to lifetimes

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