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Spatial coherence of a polariton condensate

Physical review letters, 2007-09, Vol.99 (12), p.126403-126403, Article 126403

2007

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On the mechanisms of spontaneous growth of III-nitride nanocolumns by plasma-assisted molecular beam epitaxy

Journal of crystal growth, 2008-08, Vol.310 (18), p.4035-4045

2008

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Quantum degenerate exciton-polaritons in thermal equilibrium

Physical review letters, 2006-10, Vol.97 (14), p.146402-146402, Article 146402

2006

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Determination of strain state and composition of highly mismatched group-III nitride heterostructures by x-ray diffraction

Journal of physics. D, Applied physics, 2002-04, Vol.35 (7), p.577-585

2002

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Growth of CuGaSe2 Layers on Closely Lattice-Matched GaAs Substrates by Migration-Enhanced Epitaxy

Jpn J Appl Phys, 2011-12, Vol.50 (12), p.125502-125502-5

2011

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Coherent spin transport through dynamic quantum dots

Nature materials, 2005-08, Vol.4 (8), p.585-588

2005

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Solid-state lighting The benefit of disorder

Nature materials, 2006-10, Vol.5 (10), p.769-770

2006

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Uniform quantum-dot arrays formed by natural self-faceting on patterned substrates

Nature (London), 1998-03, Vol.392 (6671), p.56-59

1998

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Epitaxial growth of Fe3Si/GaAs(001) hybrid structures

Applied physics letters, 2003-11, Vol.83 (19), p.3912-3914

2003

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Low substrate temperature and low As-pressure growth concept for the molecular beam epitaxial growth of (Ga,In)(N,As) multiple quantum wells

Journal of crystal growth, 2007-04, Vol.301-302, p.529-533

2007

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Physics and Technology of Semiconductor Quantum Devices: Proceedings of the International School Held in Mesagne (Brindisi), Italy 21–26 September 1992

1993

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Azimuthal reflection high-energy electron diffraction study of MnAs growth on GaAs(001) by molecular beam epitaxy

Journal of applied physics, 2011-07, Vol.110 (2), p.023505-023505-8

2011

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Columnar AlGaN/gaN nanocavities with AlN/GaN bragg reflectors grown by molecular beam epitaxy on Si(111)

Physical review letters, 2005-04, Vol.94 (14), p.146102.1-146102.4, Article 146102

2005

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Nucleation, coarsening and kinetic scaling of two-dimensional islands on GaSb(0 0 1)

Surface science, 2007-02, Vol.601 (3), p.814-821

2007

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Localized and delocalized states in GaNAs studied by microphotoluminescence and photoreflectance

Applied physics letters, 2009-01, Vol.94 (1), p.011907-011907-3

2009

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Layer-by-layer growth of GaAs( [formula omitted]) studied by in situ synchrotron X-ray diffraction

Surface science, 2003-02, Vol.525 (1), p.126-136

2003

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Recent progress in nanostructure fabrication using MBE

Journal of crystal growth, 2007-04, Vol.301, p.10-15

Ploog, Klaus H.

2007

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Controlled n -type doping of AlN:Si films grown on 6H-SiC(0001)by plasma-assisted molecular beam epitaxy

Applied physics letters, 2005-01, Vol.86 (2), p.024106-024106-3

2005

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Spin injection in ferromagnet-semiconductor heterostructures at room temperature (invited)

Journal of applied physics, 2002-05, Vol.91 (10), p.7256-7260

Ploog, Klaus H.

2002

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Polarization anisotropy of the photoluminescence of M-plane (In,Ga)N/GaN multiple quantum wells

Applied physics letters, 2003-06, Vol.82 (22), p.3850-3852

2003

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Low substrate temperature and low As-pressure growth concept for the molecular beam epitaxial growth of 1.55 μ m (Ga,In)(N,As) multiple quantum wells

Journal of crystal growth, 2007-04, Vol.301, p.529-533

2007

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Impact of carrier localization on the photoluminescence characteristics of (Ga,In)(N,As) and (Ga,In)(N,As,Sb) quantum wells

Journal of applied physics, 2008-12, Vol.104 (11), p.113502-113502-5

2008

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Surface kinetics of GaAs(0 0 1), InAs(0 0 1) and GaSb(0 0 1) during MBE growth studied by in situ surface X-ray diffraction

Journal of crystal growth, 2005-05, Vol.278 (1), p.449-457

2005

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Determination of the azimuthal orientational spread of GaN films by x-ray diffraction

Applied physics letters, 2002-12, Vol.81 (26), p.4928-4930

2002

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Properties of InN layers grown on 6H–SiC(0001) by plasma-assisted molecular beam epitaxy

Applied physics letters, 2004-03, Vol.84 (10), p.1671-1673

2004

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Spatial coherence of a polariton condensate

On the mechanisms of spontaneous growth of III-nitride nanocolumns by plasma-assisted molecular beam epitaxy

Quantum degenerate exciton-polaritons in thermal equilibrium

Determination of strain state and composition of highly mismatched group-III nitride heterostructures by x-ray diffraction

Growth of CuGaSe2 Layers on Closely Lattice-Matched GaAs Substrates by Migration-Enhanced Epitaxy

Coherent spin transport through dynamic quantum dots

Solid-state lighting The benefit of disorder

Uniform quantum-dot arrays formed by natural self-faceting on patterned substrates

Epitaxial growth of Fe3Si/GaAs(001) hybrid structures

Low substrate temperature and low As-pressure growth concept for the molecular beam epitaxial growth of (Ga,In)(N,As) multiple quantum wells

Physics and Technology of Semiconductor Quantum Devices: Proceedings of the International School Held in Mesagne (Brindisi), Italy 21–26 September 1992

Azimuthal reflection high-energy electron diffraction study of MnAs growth on GaAs(001) by molecular beam epitaxy

Columnar AlGaN/gaN nanocavities with AlN/GaN bragg reflectors grown by molecular beam epitaxy on Si(111)

Nucleation, coarsening and kinetic scaling of two-dimensional islands on GaSb(0 0 1)

Localized and delocalized states in GaNAs studied by microphotoluminescence and photoreflectance

Layer-by-layer growth of GaAs( [formula omitted]) studied by in situ synchrotron X-ray diffraction

Recent progress in nanostructure fabrication using MBE

Controlled n -type doping of AlN:Si films grown on 6H-SiC(0001)by plasma-assisted molecular beam epitaxy

Spin injection in ferromagnet-semiconductor heterostructures at room temperature (invited)

Polarization anisotropy of the photoluminescence of M-plane (In,Ga)N/GaN multiple quantum wells

Low substrate temperature and low As-pressure growth concept for the molecular beam epitaxial growth of 1.55 μ m (Ga,In)(N,As) multiple quantum wells

Impact of carrier localization on the photoluminescence characteristics of (Ga,In)(N,As) and (Ga,In)(N,As,Sb) quantum wells

Surface kinetics of GaAs(0 0 1), InAs(0 0 1) and GaSb(0 0 1) during MBE growth studied by in situ surface X-ray diffraction

Determination of the azimuthal orientational spread of GaN films by x-ray diffraction

Properties of InN layers grown on 6H–SiC(0001) by plasma-assisted molecular beam epitaxy

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