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Impact ionization and carrier multiplication in graphene

Journal of applied physics, 2012-11, Vol.112 (9)

2012

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Fixed charges at the HfO2/SiO2 interface: Impact on the memory window of FeFET

Memories - Materials, Devices, Circuits and Systems, 2023-07, Vol.4, p.100050, Article 100050

2023

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28 nm high-k-metal gate ferroelectric field effect transistors based synapses — A comprehensive overview

Memories - Materials, Devices, Circuits and Systems, 2023-07, Vol.4, p.100048, Article 100048

2023

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Performance and Low-Frequency Noise of 22-nm FDSOI Down to 4.2 K for Cryogenic Applications

IEEE transactions on electron devices, 2020-11, Vol.67 (11), p.4563-4567

2020

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Interface States Characterization of UTB SOI MOSFETs From the Subthreshold Current

IEEE transactions on electron devices, 2021-02, Vol.68 (2), p.497-502

2021

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Low-Frequency Noise Sources and Back-Gate Coupling Effects in FDX-SOI Device

2023 IEEE International Integrated Reliability Workshop (IIRW), 2023, p.1-4

2023

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1F-1T Array: Current Limiting Transistor Cascoded FeFET Memory Array for Variation Tolerant Vector-Matrix Multiplication Operation

IEEE transactions on nanotechnology, 2023-01, Vol.22, p.1-6

2023

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Split-Capacitance and Conductance-Frequency Characteristics of SOI Wafers in Pseudo-MOSFET Configuration

IEEE transactions on electron devices, 2015-09, Vol.62 (9), p.2717-2723

2015

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Efficient Characterization Methodology for Low-Frequency Noise Monitoring

2024 IEEE 36th International Conference on Microelectronic Test Structures (ICMTS), 2024, p.1-5

2024

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Synergistic Approach of Interfacial Layer Engineering and READ-Voltage Optimization in HfO2‑Based FeFETs for In-Memory-Computing Applications

ACS applied electronic materials, 2022-11, Vol.4 (11), p.5292-5300

2022

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Impact of High-K Deposition Process on the Noise Immunity of FeFETs and their Applicability Towards In-Memory-Computing

2023 IEEE International Integrated Reliability Workshop (IIRW), 2023, p.1-4

2023

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Evidence of 2D intersubband scattering in thin film fully depleted silicon-on-insulator transistors operating at 4.2 K

Applied physics letters, 2020-06, Vol.116 (24)

2020

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Fixed charges at the HfO 2 /SiO2 interface: Impact on the memory window of FeFET

Memories - Materials, Devices, Circuits and Systems, 2023-07, Vol.4, p.100050, Article 100050

2023

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22FDX® Technologies for Ultra-Low Power IoT, RF and mmWave Applications

Composants nanoélectroniques, 2019, Vol.2 (1)

2019

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Synergistic Approach of Interfacial Layer Engineering and READ-Voltage Optimization in HfO 2 -Based FeFETs for In-Memory-Computing Applications

ACS applied electronic materials, 2022-11, Vol.4 (11), p.5292-5300

2022

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Interfacial Layer Engineering to Enhance Noise Immunity of FeFETs for IMC Applications

2022 International Conference on IC Design and Technology (ICICDT), 2022, p.8-11

2022

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22FDX® fMAX Optimization through Parasitics Reduction and GM Boost

ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC), 2019, p.166-169

2019

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Low-frequency noise in bare SOI wafers: Experiments and model

2015 45th European Solid State Device Research Conference (ESSDERC), 2015, p.286-289

2015

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RF-pFET in fully depleted SOI demonstrates 420 GHz FT

2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 2017, p.84-87

2017

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Spike-Time Dependent Plasticity in HfO₂-Based Ferroelectric FET Synapses

2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 2024, p.1-3

2024

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28nm HKMG 1F-1R2 Multilevel Memory for Inference Engine Application

2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT), 2023, p.1-2

2023

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Demonstration of Large Polarization in Si-doped HfO2 Metal-Ferroelectric-Insulator-Semiconductor Capacitors with Good Endurance and Retention

2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT), 2023, p.1-2

2023

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Impact of Channel Implant Variation on RTN and Flicker Noise

2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), 2020, p.1-4

2020

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A fully automated RF measurement system enabling statistical analysis on 22nm FDSOI

2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), 2019, p.1-4

2019

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Investigation of advanced FDSOI CMOS devices for analog/mixed signal applications

2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), 2019, p.1-3

2019

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Impact ionization and carrier multiplication in graphene

Fixed charges at the HfO2/SiO2 interface: Impact on the memory window of FeFET

28 nm high-k-metal gate ferroelectric field effect transistors based synapses — A comprehensive overview

Performance and Low-Frequency Noise of 22-nm FDSOI Down to 4.2 K for Cryogenic Applications

Interface States Characterization of UTB SOI MOSFETs From the Subthreshold Current

Low-Frequency Noise Sources and Back-Gate Coupling Effects in FDX-SOI Device

1F-1T Array: Current Limiting Transistor Cascoded FeFET Memory Array for Variation Tolerant Vector-Matrix Multiplication Operation

Split-Capacitance and Conductance-Frequency Characteristics of SOI Wafers in Pseudo-MOSFET Configuration

Efficient Characterization Methodology for Low-Frequency Noise Monitoring

Synergistic Approach of Interfacial Layer Engineering and READ-Voltage Optimization in HfO2‑Based FeFETs for In-Memory-Computing Applications

Impact of High-K Deposition Process on the Noise Immunity of FeFETs and their Applicability Towards In-Memory-Computing

Evidence of 2D intersubband scattering in thin film fully depleted silicon-on-insulator transistors operating at 4.2 K

Fixed charges at the HfO 2 /SiO2 interface: Impact on the memory window of FeFET

22FDX® Technologies for Ultra-Low Power IoT, RF and mmWave Applications

Synergistic Approach of Interfacial Layer Engineering and READ-Voltage Optimization in HfO 2 -Based FeFETs for In-Memory-Computing Applications

Interfacial Layer Engineering to Enhance Noise Immunity of FeFETs for IMC Applications

22FDX® fMAX Optimization through Parasitics Reduction and GM Boost

Low-frequency noise in bare SOI wafers: Experiments and model

RF-pFET in fully depleted SOI demonstrates 420 GHz FT

Spike-Time Dependent Plasticity in HfO₂-Based Ferroelectric FET Synapses

28nm HKMG 1F-1R2 Multilevel Memory for Inference Engine Application

Demonstration of Large Polarization in Si-doped HfO2 Metal-Ferroelectric-Insulator-Semiconductor Capacitors with Good Endurance and Retention

Impact of Channel Implant Variation on RTN and Flicker Noise

A fully automated RF measurement system enabling statistical analysis on 22nm FDSOI

Investigation of advanced FDSOI CMOS devices for analog/mixed signal applications

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