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Electron mobility in (100) homoepitaxial layers of phosphorus-doped diamond

Journal of applied physics, 2021-03, Vol.129 (10)

2021

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Thick and widened high quality heavily boron doped diamond single crystals synthetized with high oxygen flow under high microwave power regime

Diamond and related materials, 2019-04, Vol.94, p.88-91

2019

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Impurity-to-band activation energy in phosphorus doped diamond

Journal of applied physics, 2013-08, Vol.114 (7)

2013

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Homoepitaxial boron-doped diamond with very low compensation

Physica status solidi. A, Applications and materials science, 2012-09, Vol.209 (9), p.1750-1753

2012

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Quantitative analysis of electronic absorption of phosphorus donors in diamond

Diamond and related materials, 2017-04, Vol.74, p.24-30

2017

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Characterization of the charge-carrier transport properties of IIa-Tech SC diamond for radiation detection applications

Physica status solidi. A, Applications and materials science, 2015-11, Vol.212 (11), p.2553-2558

2015

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On the origin of carrier localization in Ga1−xInxNyAs1−y/GaAs quantum wells

Applied physics letters, 2001-03, Vol.78 (11), p.1562-1564

2001

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High reactivity and stability of diamond electrodes: The influence of the B-doping concentration

Physica status solidi. A, Applications and materials science, 2009-09, Vol.206 (9), p.2063-2069

2009

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Thick boron doped diamond single crystals for high power electronics

Diamond and related materials, 2011-02, Vol.20 (2), p.145-152

2011

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n-type CVD diamond doped with phosphorus using the MOCVD technology for dopant incorporation

Physica status solidi. A, Applications and materials science, 2006-09, Vol.203 (12), p.3136-3141

2006

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Phosphorus donor incorporation in (1 0 0) homoepitaxial diamond: Role of the lateral growth

Journal of crystal growth, 2011-11, Vol.335 (1), p.31-36

2011

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The n-type doping of diamond: Present status and pending questions

Physica. B, Condensed matter, 2007-12, Vol.401, p.51-56

2007

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Determination of the phosphorus content in diamond using cathodoluminescence spectroscopy

Journal of applied physics, 2007-06, Vol.101 (11), p.113701-113701-4

2007

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Influence of tertiarybutylphosphine (TBP) addition on the CVD growth of diamond

Physica status solidi. A, Applications and materials science, 2009-09, Vol.206 (9), p.1996-1999

2009

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High surface smoothening of diamond HPHT (100) substrates

Physica status solidi. A, Applications and materials science, 2009-09, Vol.206 (9), p.1955-1959

2009

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Incorporation of arsenic in diamond grown by chemical vapor deposition

Physica status solidi. A, Applications and materials science, 2008-09, Vol.205 (9), p.2207-2210

2008

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Extreme insulating ultrathin diamond films for SOD applications: From coalescence modelling to synthesis

Diamond and related materials, 2010-05, Vol.19 (5), p.413-417

2010

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High fraction of substitutional phosphorus in a (100) diamond epilayer with low surface roughness

Applied physics letters, 2012-05, Vol.100 (19), p.192109-192109-4

2012

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Phosphorus incorporation and activity in (100)-oriented homoepitaxial diamond layers

Physica status solidi. A, Applications and materials science, 2009-09, Vol.206 (9), p.2000-2003

2009

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Cathodoluminescence as a tool to determine the phosphorus concentration in diamond

Physica status solidi. A, Applications and materials science, 2007-09, Vol.204 (9), p.2965-2970

2007

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Mechanisms affecting the photoluminescence spectra of GaInNAs after post-growth annealing

Applied physics letters, 2002-06, Vol.80 (22), p.4148-4150

2002

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MOCVD doping technology for phosphorus incorporation in diamond: Influence of the growth temperature on the electrical properties

Diamond and related materials, 2007-04, Vol.16 (4), p.815-818

2007

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Influence of alloy stability on the photoluminescence properties of GaAsN/GaAs quantum wells grown by molecular beam epitaxy

Applied physics letters, 2001-11, Vol.79 (21), p.3404-3406

2001

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From GaAs:N to oversaturated GaAsN: Analysis of the band-gap reduction

Physical review. B, Condensed matter and materials physics, 2004-02, Vol.69 (7), p.073303.1-073303.4, Article 073303

2004

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Correlations between structural and optical properties of GaInNAs quantum wells grown by MBE

Journal of crystal growth, 2003-04, Vol.251 (1), p.383-387

2003

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Electron mobility in (100) homoepitaxial layers of phosphorus-doped diamond

Thick and widened high quality heavily boron doped diamond single crystals synthetized with high oxygen flow under high microwave power regime

Impurity-to-band activation energy in phosphorus doped diamond

Homoepitaxial boron-doped diamond with very low compensation

Quantitative analysis of electronic absorption of phosphorus donors in diamond

Characterization of the charge-carrier transport properties of IIa-Tech SC diamond for radiation detection applications

On the origin of carrier localization in Ga1−xInxNyAs1−y/GaAs quantum wells

High reactivity and stability of diamond electrodes: The influence of the B-doping concentration

Thick boron doped diamond single crystals for high power electronics

n-type CVD diamond doped with phosphorus using the MOCVD technology for dopant incorporation

Phosphorus donor incorporation in (1 0 0) homoepitaxial diamond: Role of the lateral growth

The n-type doping of diamond: Present status and pending questions

Determination of the phosphorus content in diamond using cathodoluminescence spectroscopy

Influence of tertiarybutylphosphine (TBP) addition on the CVD growth of diamond

High surface smoothening of diamond HPHT (100) substrates

Incorporation of arsenic in diamond grown by chemical vapor deposition

Extreme insulating ultrathin diamond films for SOD applications: From coalescence modelling to synthesis

High fraction of substitutional phosphorus in a (100) diamond epilayer with low surface roughness

Phosphorus incorporation and activity in (100)-oriented homoepitaxial diamond layers

Cathodoluminescence as a tool to determine the phosphorus concentration in diamond

Mechanisms affecting the photoluminescence spectra of GaInNAs after post-growth annealing

MOCVD doping technology for phosphorus incorporation in diamond: Influence of the growth temperature on the electrical properties

Influence of alloy stability on the photoluminescence properties of GaAsN/GaAs quantum wells grown by molecular beam epitaxy

From GaAs:N to oversaturated GaAsN: Analysis of the band-gap reduction

Correlations between structural and optical properties of GaInNAs quantum wells grown by MBE

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