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Second-harmonic generation in silicon waveguides strained by silicon nitride

Nature materials, 2011-12, Vol.11 (2), p.148-154

2011

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Surface-related drain current dispersion effects in AlGaN-GaN HEMTs

IEEE transactions on electron devices, 2004-10, Vol.51 (10), p.1554-1561

2004

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Performance evaluation of a Schottky SiC power diode in a boost PFC application

IEEE transactions on power electronics, 2003-11, Vol.18 (6), p.1249-1253

2003

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Two-dimensional micro-Raman mapping of stress and strain distributions in strained silicon waveguides

Semiconductor science and technology, 2012-08, Vol.27 (8), p.85009

2012

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Investigation of luminescent dye-doped or rare-earth-doped monodisperse silica nanospheres for DNA microarray labelling

Optical materials, 2010-10, Vol.32 (12), p.1652-1658

2010

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Influence of gate-leakage current on drain current collapse of unpassivated GaN∕AlGaN∕GaN high electron mobility transistors

Applied physics letters, 2005-06, Vol.86 (25)

2005

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Richardson’s constant in inhomogeneous silicon carbide Schottky contacts

Journal of applied physics, 2003-06, Vol.93 (11), p.9137-9144

2003

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Enhancing the Sensitivity of DNA Microarray Using Dye-Doped Silica Nanoparticles: Detection of Human Papilloma Virus

AIP conference proceedings, 2010, Vol.1275, p.154-157

2010

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Systematic characterization of soft- and hard-breakdown spots using techniques with nanometer resolution

Microelectronic engineering, 2007-09, Vol.84 (9), p.1956-1959

2007

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Temperature Stability of Breakdown Voltage on SiC Power Schottky Diodes with Different Barrier Heights

Materials Science Forum, 2005-05, Vol.483-485, p.933-936

2005

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Anatomic and Radiologic Classification of Posterior Communicating Artery Aneurysms

Neurosurgery quarterly, 2014-05, Vol.24 (2), p.114-120

2014

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Hot carrier aging degradation phenomena in GaN based MESFETs

Microelectronics and reliability, 2004-09, Vol.44 (9), p.1375-1380

2004

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Electrical characterization of inhomogeneous Ni2Si/SiC Schottky contacts

Materials science forum, 2004-01, Vol.457-460, p.869-872

2004

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Hot-electron-stress degradation in unpassivated GaN/AlGaN/GaN HEMTs on SiC

2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual, 2005, p.415-422

2005

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Second-harmonic generation in silicon waveguides strained by silicon nitride

Nature materials, 2012-02, Vol.11 (2), p.148-154

2012

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Low current dispersion and low bias-stress degradation of unpassivated GaN/AlGaN/GaN/SiC HEMTs

Physica status solidi. C, 2005-05, Vol.2 (7), p.2676-2679

2005

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Study of breakdown dynamics in InAlAs/InGaAs/InP hemts with gate length scaling down to 80 nm

2004

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Influence of gate-leakage current on drain current collapse of unpassivated Ga N ∕ Al Ga N ∕ Ga N high electron mobility transistors

Applied physics letters, 2005-06, Vol.86 (25), p.253511-253511-3

2005

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Electrical Characterization of Inhomogeneous Ni2/Si/SiC Schottky Contacts

Materials science forum, 2004-06, Vol.457-460, p.869-872

2004

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Degradation mechanisms of GaN-based LEDs after accelerated DC current aging

Digest. International Electron Devices Meeting, 2002, p.103-106

2002

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Performance evaluation of a Schottky SiC power diode in a boost PFC application

2002 IEEE 33rd Annual IEEE Power Electronics Specialists Conference. Proceedings (Cat. No.02CH37289), 2002, Vol.2, p.631-635 vol.2

2002

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Experimental/numerical investigation on current collapse in AlGaN/GaN HEMT's

Digest. International Electron Devices Meeting, 2002, p.689-692

2002

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Experimental and numerical analysis of gate- and drain-lag phenomena in AlGaAs/InGaAs PHEMTs

The 10th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications, 2002, p.63-68

2002

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Study of breakdown dynamics in InAlAs/InGaAs/InP HEMTs with gate length scaling down to 80 nm

16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, 2004, 2004, p.823-826

2004

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A new combined process based on MWCNT spray deposition and atmospheric pressure plasma jet fixing for large scale production of transparent and flexible conductive coatings

2013 IEEE International Symposium on Advanced Packaging Materials, 2013, p.258-273

2013

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Second-harmonic generation in silicon waveguides strained by silicon nitride

Surface-related drain current dispersion effects in AlGaN-GaN HEMTs

Performance evaluation of a Schottky SiC power diode in a boost PFC application

Two-dimensional micro-Raman mapping of stress and strain distributions in strained silicon waveguides

Investigation of luminescent dye-doped or rare-earth-doped monodisperse silica nanospheres for DNA microarray labelling

Influence of gate-leakage current on drain current collapse of unpassivated GaN∕AlGaN∕GaN high electron mobility transistors

Richardson’s constant in inhomogeneous silicon carbide Schottky contacts

Enhancing the Sensitivity of DNA Microarray Using Dye-Doped Silica Nanoparticles: Detection of Human Papilloma Virus

Systematic characterization of soft- and hard-breakdown spots using techniques with nanometer resolution

Temperature Stability of Breakdown Voltage on SiC Power Schottky Diodes with Different Barrier Heights

Anatomic and Radiologic Classification of Posterior Communicating Artery Aneurysms

Hot carrier aging degradation phenomena in GaN based MESFETs

Electrical characterization of inhomogeneous Ni2Si/SiC Schottky contacts

Hot-electron-stress degradation in unpassivated GaN/AlGaN/GaN HEMTs on SiC

Second-harmonic generation in silicon waveguides strained by silicon nitride

Low current dispersion and low bias-stress degradation of unpassivated GaN/AlGaN/GaN/SiC HEMTs

Study of breakdown dynamics in InAlAs/InGaAs/InP hemts with gate length scaling down to 80 nm

Influence of gate-leakage current on drain current collapse of unpassivated Ga N ∕ Al Ga N ∕ Ga N high electron mobility transistors

Electrical Characterization of Inhomogeneous Ni2/Si/SiC Schottky Contacts

Degradation mechanisms of GaN-based LEDs after accelerated DC current aging

Performance evaluation of a Schottky SiC power diode in a boost PFC application

Experimental/numerical investigation on current collapse in AlGaN/GaN HEMT's

Experimental and numerical analysis of gate- and drain-lag phenomena in AlGaAs/InGaAs PHEMTs

Study of breakdown dynamics in InAlAs/InGaAs/InP HEMTs with gate length scaling down to 80 nm

A new combined process based on MWCNT spray deposition and atmospheric pressure plasma jet fixing for large scale production of transparent and flexible conductive coatings

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